JP5593554B2 - 極紫外線光源 - Google Patents

極紫外線光源 Download PDF

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Publication number
JP5593554B2
JP5593554B2 JP2013503803A JP2013503803A JP5593554B2 JP 5593554 B2 JP5593554 B2 JP 5593554B2 JP 2013503803 A JP2013503803 A JP 2013503803A JP 2013503803 A JP2013503803 A JP 2013503803A JP 5593554 B2 JP5593554 B2 JP 5593554B2
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Japan
Prior art keywords
chamber
light beam
light source
subsystem
target material
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JP2013503803A
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English (en)
Japanese (ja)
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JP2013524531A5 (enExample
JP2013524531A (ja
Inventor
アブヒラム ゴヴィンダラジュ
ウィリアム エヌ パートロ
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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Publication of JP2013524531A5 publication Critical patent/JP2013524531A5/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0092—Housing of the apparatus for producing X-rays; Environment inside the housing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2013503803A 2010-04-05 2011-04-01 極紫外線光源 Active JP5593554B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/753,938 US8368039B2 (en) 2010-04-05 2010-04-05 EUV light source glint reduction system
US12/753,938 2010-04-05
PCT/US2011/030974 WO2011126947A1 (en) 2010-04-05 2011-04-01 Extreme ultraviolet light source

Publications (3)

Publication Number Publication Date
JP2013524531A JP2013524531A (ja) 2013-06-17
JP2013524531A5 JP2013524531A5 (enExample) 2014-05-29
JP5593554B2 true JP5593554B2 (ja) 2014-09-24

Family

ID=44708533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013503803A Active JP5593554B2 (ja) 2010-04-05 2011-04-01 極紫外線光源

Country Status (5)

Country Link
US (1) US8368039B2 (enExample)
JP (1) JP5593554B2 (enExample)
KR (1) KR101747120B1 (enExample)
TW (1) TWI469692B (enExample)
WO (1) WO2011126947A1 (enExample)

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US8304752B2 (en) * 2009-04-10 2012-11-06 Cymer, Inc. EUV light producing system and method utilizing an alignment laser
JP5670174B2 (ja) * 2010-03-18 2015-02-18 ギガフォトン株式会社 チャンバ装置および極端紫外光生成装置
US8575576B2 (en) * 2011-02-14 2013-11-05 Kla-Tencor Corporation Optical imaging system with laser droplet plasma illuminator
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
EP2533078B1 (en) * 2011-06-09 2014-02-12 ASML Netherlands BV Radiation source and lithographic apparatus
DE102012205308B4 (de) * 2012-03-30 2018-05-30 Trumpf Lasersystems For Semiconductor Manufacturing Gmbh Vorrichtung zur Verstärkung eines Laserstrahls
US9396902B2 (en) * 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US8598552B1 (en) * 2012-05-31 2013-12-03 Cymer, Inc. System and method to optimize extreme ultraviolet light generation
US9753383B2 (en) 2012-06-22 2017-09-05 Asml Netherlands B.V. Radiation source and lithographic apparatus
US8872122B2 (en) * 2013-01-10 2014-10-28 Asml Netherlands B.V. Method of timing laser beam pulses to regulate extreme ultraviolet light dosing
US8872123B2 (en) * 2013-01-10 2014-10-28 Asml Netherlands B.V. Method of timing laser beam pulses to regulate extreme ultraviolet light dosing
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
KR102197066B1 (ko) * 2014-07-01 2020-12-30 삼성전자 주식회사 플라즈마 광원, 그 광원을 구비한 검사 장치 및 플라즈마 광 생성 방법
US9357625B2 (en) * 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
DE102016213830B3 (de) * 2016-07-27 2017-12-07 Carl Zeiss Smt Gmbh Quell-Hohlkörper sowie EUV-Plasma-Lichtquelle mit einem derartigen Quell-Hohlkörper
EP3291650B1 (en) * 2016-09-02 2019-06-05 ETH Zürich Device and method for generating uv or x-ray radiation by means of a plasma
US10310380B2 (en) * 2016-12-07 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-brightness light source
US10524345B2 (en) * 2017-04-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Residual gain monitoring and reduction for EUV drive laser
US11333621B2 (en) 2017-07-11 2022-05-17 Kla-Tencor Corporation Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
US10149374B1 (en) * 2017-08-25 2018-12-04 Asml Netherlands B.V. Receptacle for capturing material that travels on a material path
US11317500B2 (en) 2017-08-30 2022-04-26 Kla-Tencor Corporation Bright and clean x-ray source for x-ray based metrology
JP7320505B2 (ja) * 2017-12-15 2023-08-03 エーエスエムエル ネザーランズ ビー．ブイ． 真空容器内のデブリ流束測定システムの再生
US10959318B2 (en) 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
KR102555241B1 (ko) * 2018-08-08 2023-07-13 삼성전자주식회사 극자외선 생성 장치
NL2024077A (en) * 2018-10-25 2020-05-13 Asml Netherlands Bv Target material supply apparatus and method
US11259394B2 (en) 2019-11-01 2022-02-22 Kla Corporation Laser produced plasma illuminator with liquid sheet jet target
US11272607B2 (en) 2019-11-01 2022-03-08 Kla Corporation Laser produced plasma illuminator with low atomic number cryogenic target
US11143604B1 (en) 2020-04-06 2021-10-12 Kla Corporation Soft x-ray optics with improved filtering
US12061423B2 (en) * 2021-04-30 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for mitigating tin debris
CN113747644B (zh) * 2021-07-20 2024-05-28 中国工程物理研究院激光聚变研究中心 利用离子分离抑制黑腔辐射源腔壁等离子体膨胀的方法
JP2023148403A (ja) * 2022-03-30 2023-10-13 ウシオ電機株式会社 光源装置

Family Cites Families (30)

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JPH0590131A (ja) * 1991-09-26 1993-04-09 Canon Inc Ｘ線露光装置
US6567450B2 (en) 1999-12-10 2003-05-20 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
US6549551B2 (en) 1999-09-27 2003-04-15 Cymer, Inc. Injection seeded laser with precise timing control
US6625191B2 (en) 1999-12-10 2003-09-23 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
TWI222248B (en) * 2000-10-16 2004-10-11 Cymer Inc Extreme ultraviolet light source
US7491954B2 (en) 2006-10-13 2009-02-17 Cymer, Inc. Drive laser delivery systems for EUV light source
US7671349B2 (en) * 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
JP4320999B2 (ja) * 2002-02-04 2009-08-26 株式会社ニコン Ｘ線発生装置及び露光装置
JP4262032B2 (ja) * 2003-08-25 2009-05-13 キヤノン株式会社 Ｅｕｖ光源スペクトル計測装置
US7109503B1 (en) 2005-02-25 2006-09-19 Cymer, Inc. Systems for protecting internal components of an EUV light source from plasma-generated debris
JP2006202671A (ja) * 2005-01-24 2006-08-03 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置で発生するデブリの除去方法
US7449703B2 (en) 2005-02-25 2008-11-11 Cymer, Inc. Method and apparatus for EUV plasma source target delivery target material handling
US7365349B2 (en) 2005-06-27 2008-04-29 Cymer, Inc. EUV light source collector lifetime improvements
US7402825B2 (en) 2005-06-28 2008-07-22 Cymer, Inc. LPP EUV drive laser input system
JP4710463B2 (ja) * 2005-07-21 2011-06-29 ウシオ電機株式会社 極端紫外光発生装置
US7372058B2 (en) * 2005-09-27 2008-05-13 Asml Netherlands B.V. Ex-situ removal of deposition on an optical element
US7468521B2 (en) * 2005-12-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5156192B2 (ja) * 2006-01-24 2013-03-06 ギガフォトン株式会社 極端紫外光源装置
JP2008041742A (ja) * 2006-08-02 2008-02-21 Ushio Inc 極端紫外光光源装置
JP4888046B2 (ja) * 2006-10-26 2012-02-29 ウシオ電機株式会社 極端紫外光光源装置
US20080237498A1 (en) * 2007-01-29 2008-10-02 Macfarlane Joseph J High-efficiency, low-debris short-wavelength light sources
US20100146980A1 (en) * 2007-05-22 2010-06-17 Volvo Aero Corporation masking arrangement for a gas turbine engine
US7908117B2 (en) * 2007-08-03 2011-03-15 Ecofactor, Inc. System and method for using a network of thermostats as tool to verify peak demand reduction
US7655925B2 (en) * 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
JP2009099390A (ja) * 2007-10-17 2009-05-07 Tokyo Institute Of Technology 極端紫外光光源装置および極端紫外光発生方法
US8536551B2 (en) * 2008-06-12 2013-09-17 Gigaphoton Inc. Extreme ultra violet light source apparatus
US8198612B2 (en) * 2008-07-31 2012-06-12 Cymer, Inc. Systems and methods for heating an EUV collector mirror
US8519366B2 (en) 2008-08-06 2013-08-27 Cymer, Inc. Debris protection system having a magnetic field for an EUV light source
WO2010028899A1 (en) * 2008-09-11 2010-03-18 Asml Netherlands B.V. Radiation source and lithographic apparatus
EP2170021B1 (en) * 2008-09-25 2015-11-04 ASML Netherlands B.V. Source module, radiation source and lithographic apparatus

Also Published As

Publication number Publication date
US8368039B2 (en) 2013-02-05
WO2011126947A1 (en) 2011-10-13
US20110240890A1 (en) 2011-10-06
KR20130022404A (ko) 2013-03-06
JP2013524531A (ja) 2013-06-17
TW201143539A (en) 2011-12-01
TWI469692B (zh) 2015-01-11
KR101747120B1 (ko) 2017-06-27

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