KR101747120B1 - 극자외선 광원 - Google Patents

극자외선 광원 Download PDF

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Publication number
KR101747120B1
KR101747120B1 KR1020127028410A KR20127028410A KR101747120B1 KR 101747120 B1 KR101747120 B1 KR 101747120B1 KR 1020127028410 A KR1020127028410 A KR 1020127028410A KR 20127028410 A KR20127028410 A KR 20127028410A KR 101747120 B1 KR101747120 B1 KR 101747120B1
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South Korea
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chamber
target material
light beam
light
subsystem
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Korean (ko)
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KR20130022404A (ko
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아브히람 고빈다라주
윌리암 엔. 팔트로
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에이에스엠엘 네델란즈 비.브이.
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0092—Housing of the apparatus for producing X-rays; Environment inside the housing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020127028410A 2010-04-05 2011-04-01 극자외선 광원 Active KR101747120B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/753,938 US8368039B2 (en) 2010-04-05 2010-04-05 EUV light source glint reduction system
US12/753,938 2010-04-05
PCT/US2011/030974 WO2011126947A1 (en) 2010-04-05 2011-04-01 Extreme ultraviolet light source

Publications (2)

Publication Number Publication Date
KR20130022404A KR20130022404A (ko) 2013-03-06
KR101747120B1 true KR101747120B1 (ko) 2017-06-27

Family

ID=44708533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127028410A Active KR101747120B1 (ko) 2010-04-05 2011-04-01 극자외선 광원

Country Status (5)

Country Link
US (1) US8368039B2 (enExample)
JP (1) JP5593554B2 (enExample)
KR (1) KR101747120B1 (enExample)
TW (1) TWI469692B (enExample)
WO (1) WO2011126947A1 (enExample)

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KR20200017137A (ko) * 2018-08-08 2020-02-18 삼성전자주식회사 극자외선 생성 장치

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US8304752B2 (en) * 2009-04-10 2012-11-06 Cymer, Inc. EUV light producing system and method utilizing an alignment laser
JP5670174B2 (ja) * 2010-03-18 2015-02-18 ギガフォトン株式会社 チャンバ装置および極端紫外光生成装置
US8575576B2 (en) * 2011-02-14 2013-11-05 Kla-Tencor Corporation Optical imaging system with laser droplet plasma illuminator
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
EP2533078B1 (en) * 2011-06-09 2014-02-12 ASML Netherlands BV Radiation source and lithographic apparatus
DE102012205308B4 (de) * 2012-03-30 2018-05-30 Trumpf Lasersystems For Semiconductor Manufacturing Gmbh Vorrichtung zur Verstärkung eines Laserstrahls
US9396902B2 (en) * 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US8598552B1 (en) * 2012-05-31 2013-12-03 Cymer, Inc. System and method to optimize extreme ultraviolet light generation
WO2013189827A2 (en) 2012-06-22 2013-12-27 Asml Netherlands B.V. Radiation source and lithographic apparatus.
US8872122B2 (en) * 2013-01-10 2014-10-28 Asml Netherlands B.V. Method of timing laser beam pulses to regulate extreme ultraviolet light dosing
US8872123B2 (en) * 2013-01-10 2014-10-28 Asml Netherlands B.V. Method of timing laser beam pulses to regulate extreme ultraviolet light dosing
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
KR102197066B1 (ko) 2014-07-01 2020-12-30 삼성전자 주식회사 플라즈마 광원, 그 광원을 구비한 검사 장치 및 플라즈마 광 생성 방법
US9357625B2 (en) * 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
DE102016213830B3 (de) 2016-07-27 2017-12-07 Carl Zeiss Smt Gmbh Quell-Hohlkörper sowie EUV-Plasma-Lichtquelle mit einem derartigen Quell-Hohlkörper
EP3291650B1 (en) * 2016-09-02 2019-06-05 ETH Zürich Device and method for generating uv or x-ray radiation by means of a plasma
US10310380B2 (en) * 2016-12-07 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-brightness light source
US10524345B2 (en) * 2017-04-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Residual gain monitoring and reduction for EUV drive laser
US11333621B2 (en) 2017-07-11 2022-05-17 Kla-Tencor Corporation Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
US10149374B1 (en) * 2017-08-25 2018-12-04 Asml Netherlands B.V. Receptacle for capturing material that travels on a material path
US11317500B2 (en) 2017-08-30 2022-04-26 Kla-Tencor Corporation Bright and clean x-ray source for x-ray based metrology
NL2022007A (en) * 2017-12-15 2019-06-21 Asml Netherlands Bv Regeneration of a debris flux measurement system in a vacuum vessel
US10959318B2 (en) 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
NL2024077A (en) * 2018-10-25 2020-05-13 Asml Netherlands Bv Target material supply apparatus and method
US11259394B2 (en) 2019-11-01 2022-02-22 Kla Corporation Laser produced plasma illuminator with liquid sheet jet target
US11272607B2 (en) 2019-11-01 2022-03-08 Kla Corporation Laser produced plasma illuminator with low atomic number cryogenic target
US11143604B1 (en) 2020-04-06 2021-10-12 Kla Corporation Soft x-ray optics with improved filtering
US12061423B2 (en) * 2021-04-30 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for mitigating tin debris
CN113747644B (zh) * 2021-07-20 2024-05-28 中国工程物理研究院激光聚变研究中心 利用离子分离抑制黑腔辐射源腔壁等离子体膨胀的方法
JP7806584B2 (ja) * 2022-03-30 2026-01-27 ウシオ電機株式会社 光源装置

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JP2010021543A (ja) * 2008-06-12 2010-01-28 Komatsu Ltd 極端紫外光源装置
US20100025600A1 (en) * 2008-07-31 2010-02-04 Cymer, Inc. Systems and methods for heating an EUV collector mirror

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US7671349B2 (en) * 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
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KR101697610B1 (ko) * 2008-09-11 2017-01-18 에이에스엠엘 네델란즈 비.브이. 방사선 소스 및 리소그래피 장치
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JP2008108945A (ja) * 2006-10-26 2008-05-08 Ushio Inc 極端紫外光光源装置
US20090057567A1 (en) * 2007-08-31 2009-03-05 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
JP2010021543A (ja) * 2008-06-12 2010-01-28 Komatsu Ltd 極端紫外光源装置
US20100025600A1 (en) * 2008-07-31 2010-02-04 Cymer, Inc. Systems and methods for heating an EUV collector mirror

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200017137A (ko) * 2018-08-08 2020-02-18 삼성전자주식회사 극자외선 생성 장치
KR102555241B1 (ko) 2018-08-08 2023-07-13 삼성전자주식회사 극자외선 생성 장치

Also Published As

Publication number Publication date
US20110240890A1 (en) 2011-10-06
TWI469692B (zh) 2015-01-11
WO2011126947A1 (en) 2011-10-13
TW201143539A (en) 2011-12-01
JP5593554B2 (ja) 2014-09-24
JP2013524531A (ja) 2013-06-17
US8368039B2 (en) 2013-02-05
KR20130022404A (ko) 2013-03-06

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