TWI469692B - 用於產生極紫外線之裝置及方法 - Google Patents

用於產生極紫外線之裝置及方法 Download PDF

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Publication number
TWI469692B
TWI469692B TW100110591A TW100110591A TWI469692B TW I469692 B TWI469692 B TW I469692B TW 100110591 A TW100110591 A TW 100110591A TW 100110591 A TW100110591 A TW 100110591A TW I469692 B TWI469692 B TW I469692B
Authority
TW
Taiwan
Prior art keywords
chamber
target material
laser
subsystem
light
Prior art date
Application number
TW100110591A
Other languages
English (en)
Chinese (zh)
Other versions
TW201143539A (en
Inventor
Abhiram Govindaraju
William N Partlo
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW201143539A publication Critical patent/TW201143539A/zh
Application granted granted Critical
Publication of TWI469692B publication Critical patent/TWI469692B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0092—Housing of the apparatus for producing X-rays; Environment inside the housing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW100110591A 2010-04-05 2011-03-28 用於產生極紫外線之裝置及方法 TWI469692B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/753,938 US8368039B2 (en) 2010-04-05 2010-04-05 EUV light source glint reduction system

Publications (2)

Publication Number Publication Date
TW201143539A TW201143539A (en) 2011-12-01
TWI469692B true TWI469692B (zh) 2015-01-11

Family

ID=44708533

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100110591A TWI469692B (zh) 2010-04-05 2011-03-28 用於產生極紫外線之裝置及方法

Country Status (5)

Country Link
US (1) US8368039B2 (enExample)
JP (1) JP5593554B2 (enExample)
KR (1) KR101747120B1 (enExample)
TW (1) TWI469692B (enExample)
WO (1) WO2011126947A1 (enExample)

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US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
EP2533078B1 (en) * 2011-06-09 2014-02-12 ASML Netherlands BV Radiation source and lithographic apparatus
DE102012205308B4 (de) * 2012-03-30 2018-05-30 Trumpf Lasersystems For Semiconductor Manufacturing Gmbh Vorrichtung zur Verstärkung eines Laserstrahls
US9396902B2 (en) * 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US8598552B1 (en) * 2012-05-31 2013-12-03 Cymer, Inc. System and method to optimize extreme ultraviolet light generation
US9753383B2 (en) 2012-06-22 2017-09-05 Asml Netherlands B.V. Radiation source and lithographic apparatus
US8872122B2 (en) * 2013-01-10 2014-10-28 Asml Netherlands B.V. Method of timing laser beam pulses to regulate extreme ultraviolet light dosing
US8872123B2 (en) * 2013-01-10 2014-10-28 Asml Netherlands B.V. Method of timing laser beam pulses to regulate extreme ultraviolet light dosing
US8901523B1 (en) * 2013-09-04 2014-12-02 Asml Netherlands B.V. Apparatus for protecting EUV optical elements
KR102197066B1 (ko) * 2014-07-01 2020-12-30 삼성전자 주식회사 플라즈마 광원, 그 광원을 구비한 검사 장치 및 플라즈마 광 생성 방법
US9357625B2 (en) * 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
DE102016213830B3 (de) * 2016-07-27 2017-12-07 Carl Zeiss Smt Gmbh Quell-Hohlkörper sowie EUV-Plasma-Lichtquelle mit einem derartigen Quell-Hohlkörper
EP3291650B1 (en) * 2016-09-02 2019-06-05 ETH Zürich Device and method for generating uv or x-ray radiation by means of a plasma
US10310380B2 (en) * 2016-12-07 2019-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-brightness light source
US10524345B2 (en) * 2017-04-28 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Residual gain monitoring and reduction for EUV drive laser
US11333621B2 (en) 2017-07-11 2022-05-17 Kla-Tencor Corporation Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
US10149374B1 (en) * 2017-08-25 2018-12-04 Asml Netherlands B.V. Receptacle for capturing material that travels on a material path
US11317500B2 (en) 2017-08-30 2022-04-26 Kla-Tencor Corporation Bright and clean x-ray source for x-ray based metrology
JP7320505B2 (ja) * 2017-12-15 2023-08-03 エーエスエムエル ネザーランズ ビー．ブイ． 真空容器内のデブリ流束測定システムの再生
US10959318B2 (en) 2018-01-10 2021-03-23 Kla-Tencor Corporation X-ray metrology system with broadband laser produced plasma illuminator
KR102555241B1 (ko) * 2018-08-08 2023-07-13 삼성전자주식회사 극자외선 생성 장치
NL2024077A (en) * 2018-10-25 2020-05-13 Asml Netherlands Bv Target material supply apparatus and method
US11259394B2 (en) 2019-11-01 2022-02-22 Kla Corporation Laser produced plasma illuminator with liquid sheet jet target
US11272607B2 (en) 2019-11-01 2022-03-08 Kla Corporation Laser produced plasma illuminator with low atomic number cryogenic target
US11143604B1 (en) 2020-04-06 2021-10-12 Kla Corporation Soft x-ray optics with improved filtering
US12061423B2 (en) * 2021-04-30 2024-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for mitigating tin debris
CN113747644B (zh) * 2021-07-20 2024-05-28 中国工程物理研究院激光聚变研究中心 利用离子分离抑制黑腔辐射源腔壁等离子体膨胀的方法
JP2023148403A (ja) * 2022-03-30 2023-10-13 ウシオ電機株式会社 光源装置

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TW200403905A (en) * 2000-10-16 2004-03-01 Cymer Inc Extreme ultraviolet light source
US20080179548A1 (en) * 2003-04-08 2008-07-31 Cymer, Inc. Laser produced plasma EUV light source
US20070170377A1 (en) * 2006-01-24 2007-07-26 Masaki Nakano Extreme ultra violet light source device
TW200822813A (en) * 2006-10-13 2008-05-16 Cymer Inc Drive laser delivery systems for EUV light source

Also Published As

Publication number Publication date
JP5593554B2 (ja) 2014-09-24
US8368039B2 (en) 2013-02-05
WO2011126947A1 (en) 2011-10-13
US20110240890A1 (en) 2011-10-06
KR20130022404A (ko) 2013-03-06
JP2013524531A (ja) 2013-06-17
TW201143539A (en) 2011-12-01
KR101747120B1 (ko) 2017-06-27

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