JP5582686B2 - 反復されるパルス負荷のもとでの改善されたｅｓｄ保護機能を備えた回路 - Google Patents

反復されるパルス負荷のもとでの改善されたｅｓｄ保護機能を備えた回路 Download PDF

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Publication number
JP5582686B2
JP5582686B2 JP2008109120A JP2008109120A JP5582686B2 JP 5582686 B2 JP5582686 B2 JP 5582686B2 JP 2008109120 A JP2008109120 A JP 2008109120A JP 2008109120 A JP2008109120 A JP 2008109120A JP 5582686 B2 JP5582686 B2 JP 5582686B2
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JP
Japan
Prior art keywords
terminal
circuit
current
esd
transistor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008109120A
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English (en)
Japanese (ja)
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JP2008270813A5 (enExample
JP2008270813A (ja
Inventor
ヒューブル ヨヘン
ヴィルケニング ヴォルフガング
マーガー トーマス
ゲフケ トーマス
シュミット ローラント
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Robert Bosch GmbH
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Robert Bosch GmbH
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Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of JP2008270813A publication Critical patent/JP2008270813A/ja
Publication of JP2008270813A5 publication Critical patent/JP2008270813A5/ja
Application granted granted Critical
Publication of JP5582686B2 publication Critical patent/JP5582686B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2008109120A 2007-04-18 2008-04-18 反復されるパルス負荷のもとでの改善されたｅｓｄ保護機能を備えた回路 Expired - Fee Related JP5582686B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007018237.8A DE102007018237B4 (de) 2007-04-18 2007-04-18 Schaltung mit verbessertem ESD-Schutz bei repetierender Pulsbelastung
DE102007018237.8 2007-04-18

Publications (3)

Publication Number Publication Date
JP2008270813A JP2008270813A (ja) 2008-11-06
JP2008270813A5 JP2008270813A5 (enExample) 2011-05-06
JP5582686B2 true JP5582686B2 (ja) 2014-09-03

Family

ID=39767833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008109120A Expired - Fee Related JP5582686B2 (ja) 2007-04-18 2008-04-18 反復されるパルス負荷のもとでの改善されたｅｓｄ保護機能を備えた回路

Country Status (3)

Country Link
JP (1) JP5582686B2 (enExample)
DE (1) DE102007018237B4 (enExample)
IT (1) ITMI20080605A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180002878A (ko) * 2015-06-19 2018-01-08 퀄컴 인코포레이티드 고밀도 안테나 보호 다이오드를 위한 회로 및 레이아웃

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332467A (zh) * 2014-09-03 2015-02-04 上海华虹宏力半导体制造有限公司 硅控整流器esd保护结构
EP3518284A1 (en) 2018-01-25 2019-07-31 Nexperia B.V. Semiconductor device and method of operation
FR3098346B1 (fr) * 2019-07-01 2025-08-15 Wisekey Semiconductors Procede et dispositif de protection d’un circuit integre contre les decharges electrostatiques

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5982600A (en) 1998-04-20 1999-11-09 Macronix International Co., Ltd. Low-voltage triggering electrostatic discharge protection
US20050212051A1 (en) 2003-04-16 2005-09-29 Sarnoff Corporation Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies
TWI247411B (en) 2004-07-01 2006-01-11 Toppoly Optoelectronics Corp Electrostatic discharge protecting device
US7592673B2 (en) 2006-03-31 2009-09-22 Freescale Semiconductor, Inc. ESD protection circuit with isolated diode element and method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180002878A (ko) * 2015-06-19 2018-01-08 퀄컴 인코포레이티드 고밀도 안테나 보호 다이오드를 위한 회로 및 레이아웃
KR101898510B1 (ko) * 2015-06-19 2018-09-13 퀄컴 인코포레이티드 고밀도 안테나 보호 다이오드를 위한 회로 및 레이아웃

Also Published As

Publication number Publication date
DE102007018237A1 (de) 2008-10-23
JP2008270813A (ja) 2008-11-06
ITMI20080605A1 (it) 2008-10-19
DE102007018237B4 (de) 2022-11-24

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