ITMI20080605A1 - Circuito con protezione esd perfezionata per sollecitazione a impulsi ripetitiva - Google Patents
Circuito con protezione esd perfezionata per sollecitazione a impulsi ripetitivaInfo
- Publication number
- ITMI20080605A1 ITMI20080605A1 IT000605A ITMI20080605A ITMI20080605A1 IT MI20080605 A1 ITMI20080605 A1 IT MI20080605A1 IT 000605 A IT000605 A IT 000605A IT MI20080605 A ITMI20080605 A IT MI20080605A IT MI20080605 A1 ITMI20080605 A1 IT MI20080605A1
- Authority
- IT
- Italy
- Prior art keywords
- perfected
- circuit
- esd protection
- repetitive impulse
- solution
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007018237.8A DE102007018237B4 (de) | 2007-04-18 | 2007-04-18 | Schaltung mit verbessertem ESD-Schutz bei repetierender Pulsbelastung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITMI20080605A1 true ITMI20080605A1 (it) | 2008-10-19 |
Family
ID=39767833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT000605A ITMI20080605A1 (it) | 2007-04-18 | 2008-04-08 | Circuito con protezione esd perfezionata per sollecitazione a impulsi ripetitiva |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5582686B2 (it) |
| DE (1) | DE102007018237B4 (it) |
| IT (1) | ITMI20080605A1 (it) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332467A (zh) * | 2014-09-03 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | 硅控整流器esd保护结构 |
| US9490245B1 (en) * | 2015-06-19 | 2016-11-08 | Qualcomm Incorporated | Circuit and layout for a high density antenna protection diode |
| EP3518284A1 (en) * | 2018-01-25 | 2019-07-31 | Nexperia B.V. | Semiconductor device and method of operation |
| FR3098346A1 (fr) * | 2019-07-01 | 2021-01-08 | Wisekey Semiconductors | Procede et dispositif de protection d’un circuit integre contre les decharges electrostatiques |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5982600A (en) | 1998-04-20 | 1999-11-09 | Macronix International Co., Ltd. | Low-voltage triggering electrostatic discharge protection |
| US20050212051A1 (en) | 2003-04-16 | 2005-09-29 | Sarnoff Corporation | Low voltage silicon controlled rectifier (SCR) for electrostatic discharge (ESD) protection of silicon-on-insulator technologies |
| TWI247411B (en) * | 2004-07-01 | 2006-01-11 | Toppoly Optoelectronics Corp | Electrostatic discharge protecting device |
| US7592673B2 (en) | 2006-03-31 | 2009-09-22 | Freescale Semiconductor, Inc. | ESD protection circuit with isolated diode element and method thereof |
-
2007
- 2007-04-18 DE DE102007018237.8A patent/DE102007018237B4/de active Active
-
2008
- 2008-04-08 IT IT000605A patent/ITMI20080605A1/it unknown
- 2008-04-18 JP JP2008109120A patent/JP5582686B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5582686B2 (ja) | 2014-09-03 |
| DE102007018237B4 (de) | 2022-11-24 |
| JP2008270813A (ja) | 2008-11-06 |
| DE102007018237A1 (de) | 2008-10-23 |
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