JP5564781B2 - 炭化ケイ素半導体装置およびその製造方法 - Google Patents

炭化ケイ素半導体装置およびその製造方法 Download PDF

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JP5564781B2
JP5564781B2 JP2008292370A JP2008292370A JP5564781B2 JP 5564781 B2 JP5564781 B2 JP 5564781B2 JP 2008292370 A JP2008292370 A JP 2008292370A JP 2008292370 A JP2008292370 A JP 2008292370A JP 5564781 B2 JP5564781 B2 JP 5564781B2
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semiconductor layer
silicon carbide
insulating film
conductivity type
type impurity
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JP2010041021A5 (https=
JP2010041021A (ja
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美紗子 穂永
真 原田
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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JP2008292370A 2008-07-07 2008-11-14 炭化ケイ素半導体装置およびその製造方法 Expired - Fee Related JP5564781B2 (ja)

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JP2008177134 2008-07-07
JP2008177134 2008-07-07
JP2008292370A JP5564781B2 (ja) 2008-07-07 2008-11-14 炭化ケイ素半導体装置およびその製造方法

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JP2010041021A JP2010041021A (ja) 2010-02-18
JP2010041021A5 JP2010041021A5 (https=) 2010-04-02
JP5564781B2 true JP5564781B2 (ja) 2014-08-06

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2777675A1 (en) 2010-01-19 2011-07-28 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method of manufacturing thereof
JP5699628B2 (ja) * 2010-07-26 2015-04-15 住友電気工業株式会社 半導体装置
CN102959709B (zh) * 2010-07-29 2016-05-18 住友电气工业株式会社 制造碳化硅衬底的方法和制造半导体器件的方法
JP5524103B2 (ja) 2011-02-07 2014-06-18 株式会社東芝 半導体装置
JP2012253293A (ja) * 2011-06-07 2012-12-20 Sumitomo Electric Ind Ltd 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4843854B2 (ja) * 2001-03-05 2011-12-21 住友電気工業株式会社 Ｍｏｓデバイス
JP5017768B2 (ja) * 2004-05-31 2012-09-05 富士電機株式会社 炭化珪素半導体素子
JP2006210818A (ja) * 2005-01-31 2006-08-10 Matsushita Electric Ind Co Ltd 半導体素子およびその製造方法
JP5157843B2 (ja) * 2007-12-04 2013-03-06 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法
JP5298691B2 (ja) * 2008-07-31 2013-09-25 住友電気工業株式会社 炭化ケイ素半導体装置およびその製造方法

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