JP5562578B2 - オゾン発生装置用放電セル - Google Patents
オゾン発生装置用放電セル Download PDFInfo
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- JP5562578B2 JP5562578B2 JP2009115154A JP2009115154A JP5562578B2 JP 5562578 B2 JP5562578 B2 JP 5562578B2 JP 2009115154 A JP2009115154 A JP 2009115154A JP 2009115154 A JP2009115154 A JP 2009115154A JP 5562578 B2 JP5562578 B2 JP 5562578B2
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- dielectric
- discharge cell
- ozone
- ozone generator
- volume resistivity
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 title claims description 80
- 239000000126 substance Substances 0.000 claims description 43
- 239000003989 dielectric material Substances 0.000 claims description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 25
- 239000011521 glass Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000012255 powdered metal Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910018404 Al2 O3 Inorganic materials 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 229910016287 MxOy Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 47
- 239000010408 film Substances 0.000 description 40
- 239000000843 powder Substances 0.000 description 31
- 239000007789 gas Substances 0.000 description 28
- 239000000758 substrate Substances 0.000 description 21
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 15
- 229910001882 dioxygen Inorganic materials 0.000 description 15
- 230000007423 decrease Effects 0.000 description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 11
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 11
- 239000011230 binding agent Substances 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 229910001930 tungsten oxide Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical class [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
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- Glass Compositions (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
Description
11 シール部
12 リブ
13 封止材
14 低抵抗層(機能膜)
14a 機能物質の粉末
14b 無機系固定材
20 放電空隙
30 電極
40 電源
Claims (7)
- 一対の電極間にオゾン発生用の放電空隙を形成するために、一方の電極又は両方の電極に接して誘電体が配置されたオゾン発生装置用放電セルにおいて、
前記誘電体が、体積抵抗率が1014Ω・cm以上のアルミナ板であり、且つ少なくとも一方の誘電体の表面に、体積抵抗率が1×10 7 Ω・cm以上、7×10 11 Ω・cm以下であり厚みが0.1〜20μmである低抵抗層が形成されたオゾン発生装置用放電セル。 - 請求項1に記載のオゾン発生装置用放電セルにおいて、両方の電極に接して一対の誘電体が配置されており、両方の誘電体の各表面に低抵抗層が形成されているオゾン発生装置用放電セル。
- 請求項1又は2に記載のオゾン発生装置用放電セルにおいて、低抵抗層は粉状の金属又はその酸化物からなる機能物質と無機系固定材との混合物であるオゾン発生装置用放電セル。
- 請求項3に記載のオゾン発生装置用放電セルにおいて、機能物質としての粉状の金属又はその酸化物は、Ti、W、Sb、Mn、Fe、Co、Ni、V又はZn、若しくはこれら金属の酸化物(MxOy,但し、WxOyはWO3 に限る)であるオゾン発生装置用放電セル。
- 請求項3又は4に記載のオゾン発生装置用放電セルにおいて、無機系固定材は耐オゾン性及び耐スパッタ性に優れたガラスであるオゾン発生装置用放電セル。
- 請求項5に記載のオゾン発生装置用放電セルにおいて、ガラスは、SiO2 −Al2 O3 −B2 O3 系であり、SiO2 :60〜70重量%、Al2 O3 :1〜10重量%、B2 O3 :10〜20重量%の組成を満足するオゾン発生装置用放電セル。
- 請求項1〜6の何れかに記載のオゾン発生装置用放電セルにおいて、誘電体は体積抵抗率が1014Ω・cm以上である高純度アルミナ焼結板であるオゾン発生装置用放電セル。
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JP2009115154A JP5562578B2 (ja) | 2009-05-12 | 2009-05-12 | オゾン発生装置用放電セル |
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JP2009115154A JP5562578B2 (ja) | 2009-05-12 | 2009-05-12 | オゾン発生装置用放電セル |
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JP2010265121A JP2010265121A (ja) | 2010-11-25 |
JP5562578B2 true JP5562578B2 (ja) | 2014-07-30 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2833396B1 (en) * | 2012-03-29 | 2021-06-09 | Kyocera Corporation | Flow channel member, heat exchanger provided with flow channel member, and semiconductor manufacturing apparatus provided with flow channel member |
JP2017164699A (ja) * | 2016-03-17 | 2017-09-21 | 株式会社荏原製作所 | 放電反応装置 |
CN111036892A (zh) * | 2019-12-13 | 2020-04-21 | 青岛可健可康负离子技术有限公司 | 一种金属冶金法制备氧负离子发射针的方法、负离子发生器 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3416982B2 (ja) * | 1993-04-23 | 2003-06-16 | 株式会社明電舎 | オゾン発生装置 |
JP2000149799A (ja) * | 1998-11-11 | 2000-05-30 | Toray Ind Inc | 放電電極 |
JP4320637B2 (ja) * | 2004-04-08 | 2009-08-26 | 三菱電機株式会社 | オゾン発生装置およびオゾン発生方法 |
JP5052304B2 (ja) * | 2006-11-30 | 2012-10-17 | 住友精密工業株式会社 | オゾン発生装置用放電セル |
JP2010150098A (ja) * | 2008-12-26 | 2010-07-08 | Sumitomo Precision Prod Co Ltd | オゾン発生装置 |
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- 2009-05-12 JP JP2009115154A patent/JP5562578B2/ja active Active
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