JP5549629B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP5549629B2
JP5549629B2 JP2011074972A JP2011074972A JP5549629B2 JP 5549629 B2 JP5549629 B2 JP 5549629B2 JP 2011074972 A JP2011074972 A JP 2011074972A JP 2011074972 A JP2011074972 A JP 2011074972A JP 5549629 B2 JP5549629 B2 JP 5549629B2
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JP
Japan
Prior art keywords
light emitting
layer
electrode
opening
semiconductor
Prior art date
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Active
Application number
JP2011074972A
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English (en)
Japanese (ja)
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JP2012209475A (ja
Inventor
暢尚 杉森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2011074972A priority Critical patent/JP5549629B2/ja
Priority to KR1020120003765A priority patent/KR101220130B1/ko
Priority to TW101109417A priority patent/TWI456809B/zh
Priority to CN201210074692.5A priority patent/CN102738343B/zh
Publication of JP2012209475A publication Critical patent/JP2012209475A/ja
Application granted granted Critical
Publication of JP5549629B2 publication Critical patent/JP5549629B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2011074972A 2011-03-30 2011-03-30 発光素子 Active JP5549629B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011074972A JP5549629B2 (ja) 2011-03-30 2011-03-30 発光素子
KR1020120003765A KR101220130B1 (ko) 2011-03-30 2012-01-12 발광소자
TW101109417A TWI456809B (zh) 2011-03-30 2012-03-20 發光元件
CN201210074692.5A CN102738343B (zh) 2011-03-30 2012-03-20 发光元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011074972A JP5549629B2 (ja) 2011-03-30 2011-03-30 発光素子

Publications (2)

Publication Number Publication Date
JP2012209475A JP2012209475A (ja) 2012-10-25
JP5549629B2 true JP5549629B2 (ja) 2014-07-16

Family

ID=46993479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011074972A Active JP5549629B2 (ja) 2011-03-30 2011-03-30 発光素子

Country Status (4)

Country Link
JP (1) JP5549629B2 (ko)
KR (1) KR101220130B1 (ko)
CN (1) CN102738343B (ko)
TW (1) TWI456809B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101418760B1 (ko) * 2013-01-28 2014-07-11 실리콘 디스플레이 (주) 투명 지문인식 센서 어레이
KR102091844B1 (ko) * 2013-07-02 2020-04-14 서울바이오시스 주식회사 정전방전에 강한 발광 다이오드 칩 및 그것을 갖는 발광 다이오드 패키지
KR102070088B1 (ko) * 2013-06-17 2020-01-29 삼성전자주식회사 반도체 발광소자
JP2016009817A (ja) * 2014-06-26 2016-01-18 京セラ株式会社 発光素子
JP5893699B1 (ja) * 2014-09-25 2016-03-23 泰谷光電科技股▲ふん▼有限公司 発光ダイオードの透明導電層構成
CN105789400B (zh) * 2016-03-14 2018-08-14 聚灿光电科技股份有限公司 一种并联结构的led芯片及其制造方法
US10505092B2 (en) * 2017-01-24 2019-12-10 Epistar Corporation Light-emitting diode device
US11329097B2 (en) 2017-03-27 2022-05-10 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device having a first pad not overlapping first connection electrodes and a second pad not overlapping second connection electrodes in a thickness direction
KR102392866B1 (ko) * 2017-03-27 2022-05-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102381866B1 (ko) * 2017-05-02 2022-04-04 서울바이오시스 주식회사 자외선 발광 다이오드
US10784407B2 (en) * 2018-04-23 2020-09-22 Asahi Kasei Kabushiki Kaisha Nitride semiconductor light emitting element and nitride semiconductor light emitting device
KR102556280B1 (ko) 2018-07-05 2023-07-17 엘지전자 주식회사 반도체 발광 소자를 이용한 램프

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW448589B (en) * 2000-07-14 2001-08-01 United Epitaxy Co Ltd Semiconductor light emitting device
JP4069936B2 (ja) * 2002-05-27 2008-04-02 日亜化学工業株式会社 窒化物半導体発光素子、発光素子、素子積層体、並びにそれらを用いた発光装置
JP4572604B2 (ja) * 2003-06-30 2010-11-04 日亜化学工業株式会社 半導体発光素子及びそれを用いた発光装置
JP4977957B2 (ja) 2004-03-29 2012-07-18 日亜化学工業株式会社 半導体発光素子
KR100616693B1 (ko) * 2005-08-09 2006-08-28 삼성전기주식회사 질화물 반도체 발광 소자
KR100765075B1 (ko) * 2006-03-26 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광 소자 및 그 제조방법
CN102779918B (zh) * 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
CN201191612Y (zh) * 2008-02-28 2009-02-04 陈朝春 一种具有保护功能的防静电发光二极管
KR101020910B1 (ko) * 2008-12-24 2011-03-09 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR20100087466A (ko) * 2009-01-28 2010-08-05 삼성엘이디 주식회사 발광다이오드 소자 및 이의 제조방법
JP5614938B2 (ja) * 2009-02-26 2014-10-29 日亜化学工業株式会社 半導体発光素子
KR100999806B1 (ko) * 2009-05-21 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
TW201242119A (en) 2012-10-16
KR20120111960A (ko) 2012-10-11
KR101220130B1 (ko) 2013-01-11
CN102738343A (zh) 2012-10-17
CN102738343B (zh) 2015-07-01
TWI456809B (zh) 2014-10-11
JP2012209475A (ja) 2012-10-25

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