CN201191612Y - 一种具有保护功能的防静电发光二极管 - Google Patents

一种具有保护功能的防静电发光二极管 Download PDF

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Publication number
CN201191612Y
CN201191612Y CNU2008200443461U CN200820044346U CN201191612Y CN 201191612 Y CN201191612 Y CN 201191612Y CN U2008200443461 U CNU2008200443461 U CN U2008200443461U CN 200820044346 U CN200820044346 U CN 200820044346U CN 201191612 Y CN201191612 Y CN 201191612Y
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semiconductor chip
zener diode
pole
light
diode
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Expired - Fee Related
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CNU2008200443461U
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陈朝春
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

本实用新型公开一种带保护功能的发光二极管，包括固体发光半导体芯片、两引脚导体，在固体发光半导体芯片两极间反向并联一个齐纳二极管，即固体发光半导体芯片P极与齐纳二极管N极、固体发光半导体芯片N极与齐纳二极管P极连接构成回路，采用这种结构后可吸收物料环境中静电及电路中反向感应电压及浪涌电压，从而减少发光管二极管反向击穿现象，使之有更高稳定性。

Description

一种具有保护功能的防静电发光二极管
技术领域
本实用新型涉及一种发光二极管，具体的说是一种具有保护功能的发光二极管。
背景技术
目前许多电子产品中都应用了发光二极管作为指示器件，如七段数码管、发光二极管制成的显示屏等，由于物料、空气中静电在电路中存在反向感应电压及浪涌电压而容易造成发光管二极管反向击穿现象，由发光二极管作为指示器件的产品中因发光二极管的损坏，会给人在判断上造成错误而酿成事故，由于物料环境中的静电使生产过程中产生不良及报废品。
实用新型内容
本实用新型要解决的技术问题是提供一种带保护功能的发光二极管，它具有在使用中更高可靠性。
为了解决上述问题，本实用新型的发光二极管包括固体发光半导体芯片、两引脚导体，在固体发光半导体芯片两极间反向并联一个齐纳二极管，即固体发光半导体芯片P极与齐纳二极管N极、固体发光半导体芯片N极与齐纳二极管P极连接构成回路。
在上所述发光二极管中，固体发光半导体芯片与齐纳二极管一同封装在树脂保护体内或其它定型体内
采用这种结构后发光二极管中可吸物料环境中的静电及电路中的反向感应电压及浪涌电压从而减少发光管二极管反向击穿现象，起到发光芯片不受到损伤使发光二极管更具稳定性。
附图说明
图1是本实用新型结构视图。
图2是图1的电路原理图。
具体实施方式
图1所示防静电发光二极管是这样实现的，脚1LED芯片正极的上面固定一颗齐纳二极管5上为正下为负，用导电胶与支架2连接，齐纳二极管的5的正极P与LED负极2支架连接，LED芯片3负极N与LED芯片负极支架2相连接，正极P与LED正极支架1连接，在一同封装在同一树脂保护体或其他定型体4内。
图2所示齐纳二极管5是反极性，上为负N下为正P，齐纳二极管5固在支架2上，齐纳二极管负N与LED极1连接，LED芯3照图1连接，在一同封装定型在保护体4内。

Claims (2)

1.一种带保护功能的发光二极管，包括固体发光半导体芯片、两引脚导体，其特征在于：在固体发光半导体芯片两极反向并联一个齐纳二极管，即固体发光半导体芯片P极与齐纳二极管N极、固体发光半导体芯片N极与齐纳二极管P极连接构成回路。
2.根据权利要求1所述的发光二极管，其特征在于：所述固体发光半导体芯片与齐纳二极管一同封装在透明保护体内。
CNU2008200443461U 2008-02-28 2008-02-28 一种具有保护功能的防静电发光二极管 Expired - Fee Related CN201191612Y (zh)

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CNU2008200443461U CN201191612Y (zh) 2008-02-28 2008-02-28 一种具有保护功能的防静电发光二极管

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CNU2008200443461U CN201191612Y (zh) 2008-02-28 2008-02-28 一种具有保护功能的防静电发光二极管

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CN201191612Y true CN201191612Y (zh) 2009-02-04

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102738343A (zh) * 2011-03-30 2012-10-17 三垦电气株式会社 发光元件

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102738343A (zh) * 2011-03-30 2012-10-17 三垦电气株式会社 发光元件
CN102738343B (zh) * 2011-03-30 2015-07-01 三垦电气株式会社 发光元件

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Granted publication date: 20090204

Termination date: 20110228