JP5546198B2 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP5546198B2
JP5546198B2 JP2009235088A JP2009235088A JP5546198B2 JP 5546198 B2 JP5546198 B2 JP 5546198B2 JP 2009235088 A JP2009235088 A JP 2009235088A JP 2009235088 A JP2009235088 A JP 2009235088A JP 5546198 B2 JP5546198 B2 JP 5546198B2
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JP
Japan
Prior art keywords
semiconductor region
pixel
photoelectric conversion
conversion unit
imaging device
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Active
Application number
JP2009235088A
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English (en)
Japanese (ja)
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JP2011082426A5 (enExample
JP2011082426A (ja
Inventor
昌弘 小林
雄一郎 山下
裕介 大貫
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Canon Inc
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Canon Inc
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Filing date
Publication date
Priority to JP2009235088A priority Critical patent/JP5546198B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to US13/500,043 priority patent/US9041132B2/en
Priority to CN201080044580.4A priority patent/CN102576717B/zh
Priority to EP10770882.8A priority patent/EP2486588B1/en
Priority to PCT/JP2010/005841 priority patent/WO2011043035A1/en
Publication of JP2011082426A publication Critical patent/JP2011082426A/ja
Publication of JP2011082426A5 publication Critical patent/JP2011082426A5/ja
Application granted granted Critical
Publication of JP5546198B2 publication Critical patent/JP5546198B2/ja
Priority to US14/693,692 priority patent/US9502465B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2009235088A 2009-10-09 2009-10-09 固体撮像装置 Active JP5546198B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009235088A JP5546198B2 (ja) 2009-10-09 2009-10-09 固体撮像装置
CN201080044580.4A CN102576717B (zh) 2009-10-09 2010-09-29 固态图像拾取装置
EP10770882.8A EP2486588B1 (en) 2009-10-09 2010-09-29 Solid-state image pickup device
PCT/JP2010/005841 WO2011043035A1 (en) 2009-10-09 2010-09-29 Solid-state image pickup device
US13/500,043 US9041132B2 (en) 2009-10-09 2010-09-29 Solid-state image pickup device
US14/693,692 US9502465B2 (en) 2009-10-09 2015-04-22 Solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009235088A JP5546198B2 (ja) 2009-10-09 2009-10-09 固体撮像装置

Publications (3)

Publication Number Publication Date
JP2011082426A JP2011082426A (ja) 2011-04-21
JP2011082426A5 JP2011082426A5 (enExample) 2012-11-22
JP5546198B2 true JP5546198B2 (ja) 2014-07-09

Family

ID=43109811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009235088A Active JP5546198B2 (ja) 2009-10-09 2009-10-09 固体撮像装置

Country Status (5)

Country Link
US (2) US9041132B2 (enExample)
EP (1) EP2486588B1 (enExample)
JP (1) JP5546198B2 (enExample)
CN (1) CN102576717B (enExample)
WO (1) WO2011043035A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6095258B2 (ja) 2011-05-27 2017-03-15 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム
US9231007B2 (en) * 2013-08-27 2016-01-05 Semiconductor Components Industries, Llc Image sensors operable in global shutter mode and having small pixels with high well capacity
JP6141160B2 (ja) * 2013-09-25 2017-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
JP6308864B2 (ja) * 2014-05-15 2018-04-11 キヤノン株式会社 撮像装置
JP2016187018A (ja) * 2015-03-27 2016-10-27 キヤノン株式会社 光電変換装置およびカメラ
US10396108B2 (en) 2015-10-27 2019-08-27 Sony Semiconductor Solutions Corporation Solid-state imaging element, solid-state imaging element manufacturing method, and electronic apparatus
JP6407227B2 (ja) * 2016-10-05 2018-10-17 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム
JP6661723B2 (ja) * 2018-09-19 2020-03-11 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3702854B2 (ja) * 2002-03-06 2005-10-05 ソニー株式会社 固体撮像素子
TWI353979B (en) 2002-04-10 2011-12-11 Nippon Zoki Pharmaceutical Co Novel crystal form of 5-hydroxy-1-methylhydantoin
WO2003096421A1 (en) 2002-05-14 2003-11-20 Sony Corporation Semiconductor device and its manufacturing method, and electronic device
WO2004017411A1 (ja) 2002-08-12 2004-02-26 Sony Corporation 固体撮像素子及びその製造方法
JP2004165462A (ja) 2002-11-14 2004-06-10 Sony Corp 固体撮像素子及びその製造方法
US7153719B2 (en) * 2004-08-24 2006-12-26 Micron Technology, Inc. Method of fabricating a storage gate pixel design
JP4416668B2 (ja) 2005-01-14 2010-02-17 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
JP4273124B2 (ja) 2005-02-04 2009-06-03 キヤノン株式会社 撮像装置及び撮像システム
JP4785433B2 (ja) 2005-06-10 2011-10-05 キヤノン株式会社 固体撮像装置
US7605440B2 (en) * 2006-04-07 2009-10-20 Aptina Imaging Corporation Pixel cell isolation of charge storage and floating diffusion regions using doped wells
JP2008004692A (ja) * 2006-06-21 2008-01-10 Nikon Corp 固体撮像装置
JP2009038167A (ja) 2007-08-01 2009-02-19 Victor Co Of Japan Ltd 固体撮像装置及びその製造方法
JP5213501B2 (ja) 2008-04-09 2013-06-19 キヤノン株式会社 固体撮像装置
JP4785963B2 (ja) * 2009-10-09 2011-10-05 キヤノン株式会社 固体撮像装置

Also Published As

Publication number Publication date
US9041132B2 (en) 2015-05-26
EP2486588A1 (en) 2012-08-15
US9502465B2 (en) 2016-11-22
WO2011043035A1 (en) 2011-04-14
EP2486588B1 (en) 2018-07-18
CN102576717A (zh) 2012-07-11
US20150228692A1 (en) 2015-08-13
US20120199933A1 (en) 2012-08-09
CN102576717B (zh) 2015-04-01
JP2011082426A (ja) 2011-04-21

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