CN102576717B - 固态图像拾取装置 - Google Patents

固态图像拾取装置 Download PDF

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Publication number
CN102576717B
CN102576717B CN201080044580.4A CN201080044580A CN102576717B CN 102576717 B CN102576717 B CN 102576717B CN 201080044580 A CN201080044580 A CN 201080044580A CN 102576717 B CN102576717 B CN 102576717B
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China
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semiconductor region
photoelectric conversion
pixel
conversion portion
conductivity type
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CN201080044580.4A
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English (en)
Chinese (zh)
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CN102576717A (zh
Inventor
小林昌弘
山下雄一郎
大贯裕介
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Canon Inc
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Canon Inc
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Publication of CN102576717A publication Critical patent/CN102576717A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201080044580.4A 2009-10-09 2010-09-29 固态图像拾取装置 Active CN102576717B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009235088A JP5546198B2 (ja) 2009-10-09 2009-10-09 固体撮像装置
JP2009-235088 2009-10-09
PCT/JP2010/005841 WO2011043035A1 (en) 2009-10-09 2010-09-29 Solid-state image pickup device

Publications (2)

Publication Number Publication Date
CN102576717A CN102576717A (zh) 2012-07-11
CN102576717B true CN102576717B (zh) 2015-04-01

Family

ID=43109811

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080044580.4A Active CN102576717B (zh) 2009-10-09 2010-09-29 固态图像拾取装置

Country Status (5)

Country Link
US (2) US9041132B2 (enExample)
EP (1) EP2486588B1 (enExample)
JP (1) JP5546198B2 (enExample)
CN (1) CN102576717B (enExample)
WO (1) WO2011043035A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6095258B2 (ja) 2011-05-27 2017-03-15 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム
US9231007B2 (en) * 2013-08-27 2016-01-05 Semiconductor Components Industries, Llc Image sensors operable in global shutter mode and having small pixels with high well capacity
JP6141160B2 (ja) * 2013-09-25 2017-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
JP6308864B2 (ja) * 2014-05-15 2018-04-11 キヤノン株式会社 撮像装置
JP2016187018A (ja) * 2015-03-27 2016-10-27 キヤノン株式会社 光電変換装置およびカメラ
JP7126826B2 (ja) 2015-10-27 2022-08-29 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法、並びに電子機器
JP6407227B2 (ja) * 2016-10-05 2018-10-17 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム
JP6661723B2 (ja) * 2018-09-19 2020-03-11 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030209712A1 (en) * 2002-03-06 2003-11-13 Hiroaki Fujita Solid state image pickup device
CN1552100A (zh) * 2002-05-14 2004-12-01 ������������ʽ���� 半导体装置、半导体装置的制造方法及其电子设备
US20050035375A1 (en) * 2002-11-14 2005-02-17 Kiyoshi Hirata Solid-state imaging device and method for manufacturing the same
CN1685516A (zh) * 2002-08-12 2005-10-19 索尼株式会社 固态摄像装置及其制造方法
US20060046338A1 (en) * 2004-08-24 2006-03-02 Inna Patrick Method of fabricating a storage gate pixel design
JP2008004692A (ja) * 2006-06-21 2008-01-10 Nikon Corp 固体撮像装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI353979B (en) 2002-04-10 2011-12-11 Nippon Zoki Pharmaceutical Co Novel crystal form of 5-hydroxy-1-methylhydantoin
JP4416668B2 (ja) 2005-01-14 2010-02-17 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
JP4273124B2 (ja) 2005-02-04 2009-06-03 キヤノン株式会社 撮像装置及び撮像システム
JP4785433B2 (ja) * 2005-06-10 2011-10-05 キヤノン株式会社 固体撮像装置
US7605440B2 (en) * 2006-04-07 2009-10-20 Aptina Imaging Corporation Pixel cell isolation of charge storage and floating diffusion regions using doped wells
JP2009038167A (ja) 2007-08-01 2009-02-19 Victor Co Of Japan Ltd 固体撮像装置及びその製造方法
JP5213501B2 (ja) 2008-04-09 2013-06-19 キヤノン株式会社 固体撮像装置
JP4785963B2 (ja) * 2009-10-09 2011-10-05 キヤノン株式会社 固体撮像装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030209712A1 (en) * 2002-03-06 2003-11-13 Hiroaki Fujita Solid state image pickup device
CN1552100A (zh) * 2002-05-14 2004-12-01 ������������ʽ���� 半导体装置、半导体装置的制造方法及其电子设备
CN1685516A (zh) * 2002-08-12 2005-10-19 索尼株式会社 固态摄像装置及其制造方法
US20050035375A1 (en) * 2002-11-14 2005-02-17 Kiyoshi Hirata Solid-state imaging device and method for manufacturing the same
US20060046338A1 (en) * 2004-08-24 2006-03-02 Inna Patrick Method of fabricating a storage gate pixel design
JP2008004692A (ja) * 2006-06-21 2008-01-10 Nikon Corp 固体撮像装置

Also Published As

Publication number Publication date
EP2486588B1 (en) 2018-07-18
CN102576717A (zh) 2012-07-11
US9502465B2 (en) 2016-11-22
US9041132B2 (en) 2015-05-26
JP5546198B2 (ja) 2014-07-09
US20150228692A1 (en) 2015-08-13
JP2011082426A (ja) 2011-04-21
US20120199933A1 (en) 2012-08-09
WO2011043035A1 (en) 2011-04-14
EP2486588A1 (en) 2012-08-15

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