JP5541618B2 - 半導体パッケージの製造方法 - Google Patents

半導体パッケージの製造方法 Download PDF

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Publication number
JP5541618B2
JP5541618B2 JP2009201299A JP2009201299A JP5541618B2 JP 5541618 B2 JP5541618 B2 JP 5541618B2 JP 2009201299 A JP2009201299 A JP 2009201299A JP 2009201299 A JP2009201299 A JP 2009201299A JP 5541618 B2 JP5541618 B2 JP 5541618B2
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Prior art keywords
semiconductor chip
layer
resin portion
semiconductor
semiconductor package
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Expired - Fee Related
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JP2009201299A
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Japanese (ja)
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JP2011054703A5 (enExample
JP2011054703A (ja
Inventor
晃明 千野
昭彦 立岩
史雅 片桐
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2009201299A priority Critical patent/JP5541618B2/ja
Priority to US12/839,473 priority patent/US8436471B2/en
Publication of JP2011054703A publication Critical patent/JP2011054703A/ja
Publication of JP2011054703A5 publication Critical patent/JP2011054703A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2009201299A 2009-09-01 2009-09-01 半導体パッケージの製造方法 Expired - Fee Related JP5541618B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009201299A JP5541618B2 (ja) 2009-09-01 2009-09-01 半導体パッケージの製造方法
US12/839,473 US8436471B2 (en) 2009-09-01 2010-07-20 Semiconductor package with its surface edge covered by resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009201299A JP5541618B2 (ja) 2009-09-01 2009-09-01 半導体パッケージの製造方法

Publications (3)

Publication Number Publication Date
JP2011054703A JP2011054703A (ja) 2011-03-17
JP2011054703A5 JP2011054703A5 (enExample) 2012-09-13
JP5541618B2 true JP5541618B2 (ja) 2014-07-09

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JP2009201299A Expired - Fee Related JP5541618B2 (ja) 2009-09-01 2009-09-01 半導体パッケージの製造方法

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JP (1) JP5541618B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5581519B2 (ja) 2009-12-04 2014-09-03 新光電気工業株式会社 半導体パッケージとその製造方法
US10418298B2 (en) * 2013-09-24 2019-09-17 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming dual fan-out semiconductor package
US10032704B2 (en) * 2015-02-13 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking by adjusting opening size in pop packages
US20170133334A1 (en) * 2015-11-09 2017-05-11 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
JP6921794B2 (ja) * 2018-09-14 2021-08-18 株式会社東芝 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3726318B2 (ja) * 1995-08-22 2005-12-14 株式会社日立製作所 チップ サイズ パッケージとその製造方法及びセカンド レヴェル パッケージング
US5977615A (en) * 1996-12-24 1999-11-02 Matsushita Electronics Corporation Lead frame, method of manufacturing lead frame, semiconductor device and method of manufacturing semiconductor device
JP2000124354A (ja) * 1998-10-21 2000-04-28 Matsushita Electric Ind Co Ltd チップサイズパッケージ及びその製造方法
US6348728B1 (en) * 2000-01-28 2002-02-19 Fujitsu Limited Semiconductor device having a plurality of semiconductor elements interconnected by a redistribution layer
WO2002015266A2 (en) 2000-08-16 2002-02-21 Intel Corporation Direct build-up layer on an encapsulated die package
US6734534B1 (en) 2000-08-16 2004-05-11 Intel Corporation Microelectronic substrate with integrated devices
JP2004079716A (ja) * 2002-08-14 2004-03-11 Nec Electronics Corp 半導体用ｃｓｐ型パッケージ及びその製造方法
JP4549171B2 (ja) * 2004-08-31 2010-09-22 三洋電機株式会社 混成集積回路装置
JPWO2006100768A1 (ja) * 2005-03-23 2008-08-28 富士通株式会社 半導体装置及びその製造方法
CN100539054C (zh) * 2007-03-13 2009-09-09 百慕达南茂科技股份有限公司 芯片封装结构及其制作方法

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US20110049726A1 (en) 2011-03-03
US8436471B2 (en) 2013-05-07
JP2011054703A (ja) 2011-03-17

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