JP5539406B2 - リソグラフィマシン及び基板処理構成体 - Google Patents

リソグラフィマシン及び基板処理構成体 Download PDF

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Publication number
JP5539406B2
JP5539406B2 JP2011550596A JP2011550596A JP5539406B2 JP 5539406 B2 JP5539406 B2 JP 5539406B2 JP 2011550596 A JP2011550596 A JP 2011550596A JP 2011550596 A JP2011550596 A JP 2011550596A JP 5539406 B2 JP5539406 B2 JP 5539406B2
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Japan
Prior art keywords
lithographic apparatus
chamber
door
vacuum
vacuum chamber
Prior art date
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Expired - Fee Related
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JP2011550596A
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English (en)
Japanese (ja)
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JP2012518902A5 (https=
JP2012518902A (ja
Inventor
デ・ボエル、グイド
バルトゥセン、サンデル
デ・ヨング、ヘンドリク・ヤン
Original Assignee
マッパー・リソグラフィー・アイピー・ビー．ブイ．
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Publication of JP2012518902A publication Critical patent/JP2012518902A/ja
Publication of JP2012518902A5 publication Critical patent/JP2012518902A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2011550596A 2009-02-22 2010-02-22 リソグラフィマシン及び基板処理構成体 Expired - Fee Related JP5539406B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US15441109P 2009-02-22 2009-02-22
US15441509P 2009-02-22 2009-02-22
US61/154,411 2009-02-22
US61/154,415 2009-02-22
US28940709P 2009-12-23 2009-12-23
US61/289,407 2009-12-23
US30633310P 2010-02-19 2010-02-19
US61/306,333 2010-02-19
PCT/EP2010/052221 WO2010094804A1 (en) 2009-02-22 2010-02-22 Lithography machine and substrate handling arrangement

Publications (3)

Publication Number Publication Date
JP2012518902A JP2012518902A (ja) 2012-08-16
JP2012518902A5 JP2012518902A5 (https=) 2013-04-11
JP5539406B2 true JP5539406B2 (ja) 2014-07-02

Family

ID=42035939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011550596A Expired - Fee Related JP5539406B2 (ja) 2009-02-22 2010-02-22 リソグラフィマシン及び基板処理構成体

Country Status (6)

Country Link
US (1) US20110049393A1 (https=)
EP (1) EP2399271B1 (https=)
JP (1) JP5539406B2 (https=)
KR (1) KR20110139699A (https=)
CN (1) CN102414776A (https=)
WO (1) WO2010094804A1 (https=)

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JP5315100B2 (ja) * 2009-03-18 2013-10-16 株式会社ニューフレアテクノロジー 描画装置
EP2681624B1 (en) * 2010-12-14 2016-07-20 Mapper Lithography IP B.V. Lithography system and method of processing substrates in such a lithography system
CN106933063B (zh) * 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
CN104428866A (zh) 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
NL2010624C2 (en) 2013-04-08 2014-10-09 Mapper Lithography Ip Bv Cabinet for electronic equipment.
KR20160044005A (ko) * 2013-08-16 2016-04-22 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 프로그램가능한 패터닝 디바이스 및 리소그래피 방법
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
WO2021193369A1 (ja) * 2020-03-26 2021-09-30 国立研究開発法人物質・材料研究機構 走査型電子顕微鏡用電子銃チャンバー、これを含む電子銃及び走査電子顕微鏡
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) * 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12500060B2 (en) 2021-07-14 2025-12-16 Ims Nanofabrication Gmbh Electromagnetic lens
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure
CN119404299A (zh) * 2022-08-05 2025-02-07 Asml荷兰有限公司 高生产量装载锁定腔室

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Also Published As

Publication number Publication date
WO2010094804A1 (en) 2010-08-26
KR20110139699A (ko) 2011-12-29
EP2399271A1 (en) 2011-12-28
US20110049393A1 (en) 2011-03-03
JP2012518902A (ja) 2012-08-16
EP2399271B1 (en) 2013-01-16
CN102414776A (zh) 2012-04-11

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