CN102414776A - 微影机及基板处理的配置 - Google Patents

微影机及基板处理的配置 Download PDF

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Publication number
CN102414776A
CN102414776A CN201080017870XA CN201080017870A CN102414776A CN 102414776 A CN102414776 A CN 102414776A CN 201080017870X A CN201080017870X A CN 201080017870XA CN 201080017870 A CN201080017870 A CN 201080017870A CN 102414776 A CN102414776 A CN 102414776A
Authority
CN
China
Prior art keywords
lithography
rows
chamber
vacuum chamber
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201080017870XA
Other languages
English (en)
Chinese (zh)
Inventor
G.德波尔
S.巴尔图森
H.J.德琼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mapper Lithopraphy IP BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of CN102414776A publication Critical patent/CN102414776A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/16Vessels; Containers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/18Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201080017870XA 2009-02-22 2010-02-22 微影机及基板处理的配置 Pending CN102414776A (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US15441109P 2009-02-22 2009-02-22
US15441509P 2009-02-22 2009-02-22
US61/154,415 2009-02-22
US61/154,411 2009-02-22
US28940709P 2009-12-23 2009-12-23
US61/289,407 2009-12-23
US30633310P 2010-02-19 2010-02-19
US61/306,333 2010-02-19
PCT/EP2010/052221 WO2010094804A1 (en) 2009-02-22 2010-02-22 Lithography machine and substrate handling arrangement

Publications (1)

Publication Number Publication Date
CN102414776A true CN102414776A (zh) 2012-04-11

Family

ID=42035939

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080017870XA Pending CN102414776A (zh) 2009-02-22 2010-02-22 微影机及基板处理的配置

Country Status (6)

Country Link
US (1) US20110049393A1 (https=)
EP (1) EP2399271B1 (https=)
JP (1) JP5539406B2 (https=)
KR (1) KR20110139699A (https=)
CN (1) CN102414776A (https=)
WO (1) WO2010094804A1 (https=)

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JP5315100B2 (ja) * 2009-03-18 2013-10-16 株式会社ニューフレアテクノロジー 描画装置
JP6158091B2 (ja) * 2010-12-14 2017-07-05 マッパー・リソグラフィー・アイピー・ビー.ブイ. リソグラフィシステム及びこのようなリソグラフィシステムで基板を処理する方法
US9123507B2 (en) * 2012-03-20 2015-09-01 Mapper Lithography Ip B.V. Arrangement and method for transporting radicals
CN107359101B (zh) 2012-05-14 2019-07-12 Asml荷兰有限公司 带电粒子射束产生器中的高电压屏蔽和冷却
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
NL2010624C2 (en) 2013-04-08 2014-10-09 Mapper Lithography Ip Bv Cabinet for electronic equipment.
JP2016528556A (ja) * 2013-08-16 2016-09-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置、プログラマブルパターニングデバイスおよびリソグラフィ方法
KR102919104B1 (ko) 2020-02-03 2026-01-29 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
WO2021193369A1 (ja) * 2020-03-26 2021-09-30 国立研究開発法人物質・材料研究機構 走査型電子顕微鏡用電子銃チャンバー、これを含む電子銃及び走査電子顕微鏡
KR102922552B1 (ko) 2020-04-24 2026-02-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) * 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12500060B2 (en) 2021-07-14 2025-12-16 Ims Nanofabrication Gmbh Electromagnetic lens
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure
US20250379075A1 (en) * 2022-08-05 2025-12-11 Asml Netherlands B.V. High-throughput load lock chamber

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US5853176A (en) * 1996-02-06 1998-12-29 Tokyo Electron Limited Vacuum chamber and method of manufacturing the vacuum chamber
US5855726A (en) * 1995-07-19 1999-01-05 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
US6235634B1 (en) * 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
US20070144439A1 (en) * 2004-12-22 2007-06-28 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes

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EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JPH1054369A (ja) * 1996-05-21 1998-02-24 Ebara Corp 真空ポンプの制御装置
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JP3019260B1 (ja) * 1999-03-26 2000-03-13 株式会社日立製作所 電子ビ―ム描画装置
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EP2302457B1 (en) 2002-10-25 2016-03-30 Mapper Lithography Ip B.V. Lithography system
CN101414534B (zh) 2002-10-30 2012-10-03 迈普尔平版印刷Ip有限公司 电子束曝光系统
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
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CN105304529B (zh) * 2005-09-18 2019-03-15 弗雷德里克·A·弗里奇 用于在洁净空间中垂直定位基片处理设备的方法和装置
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US5855726A (en) * 1995-07-19 1999-01-05 Hitachi, Ltd. Vacuum processing apparatus and semiconductor manufacturing line using the same
US5853176A (en) * 1996-02-06 1998-12-29 Tokyo Electron Limited Vacuum chamber and method of manufacturing the vacuum chamber
US6235634B1 (en) * 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
US20070144439A1 (en) * 2004-12-22 2007-06-28 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes

Also Published As

Publication number Publication date
EP2399271B1 (en) 2013-01-16
JP2012518902A (ja) 2012-08-16
EP2399271A1 (en) 2011-12-28
US20110049393A1 (en) 2011-03-03
KR20110139699A (ko) 2011-12-29
WO2010094804A1 (en) 2010-08-26
JP5539406B2 (ja) 2014-07-02

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Effective date of abandoning: 20160203

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