JP5521286B2 - 薄膜素子の製造方法 - Google Patents
薄膜素子の製造方法 Download PDFInfo
- Publication number
- JP5521286B2 JP5521286B2 JP2008139130A JP2008139130A JP5521286B2 JP 5521286 B2 JP5521286 B2 JP 5521286B2 JP 2008139130 A JP2008139130 A JP 2008139130A JP 2008139130 A JP2008139130 A JP 2008139130A JP 5521286 B2 JP5521286 B2 JP 5521286B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- insulating film
- substrate
- temporary substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008139130A JP5521286B2 (ja) | 2008-05-28 | 2008-05-28 | 薄膜素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008139130A JP5521286B2 (ja) | 2008-05-28 | 2008-05-28 | 薄膜素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009289864A JP2009289864A (ja) | 2009-12-10 |
| JP2009289864A5 JP2009289864A5 (https=) | 2011-01-06 |
| JP5521286B2 true JP5521286B2 (ja) | 2014-06-11 |
Family
ID=41458818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008139130A Expired - Fee Related JP5521286B2 (ja) | 2008-05-28 | 2008-05-28 | 薄膜素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5521286B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
| TWI761605B (zh) * | 2012-09-14 | 2022-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3116085B2 (ja) * | 1997-09-16 | 2000-12-11 | 東京農工大学長 | 半導体素子形成法 |
| JP5052033B2 (ja) * | 2005-04-28 | 2012-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3924303B2 (ja) * | 2005-05-09 | 2007-06-06 | ローム株式会社 | 窒化物半導体素子およびその製法 |
| JP5216201B2 (ja) * | 2005-09-27 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法、液晶表示装置、rfidタグ、発光装置及び電子機器 |
-
2008
- 2008-05-28 JP JP2008139130A patent/JP5521286B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009289864A (ja) | 2009-12-10 |
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