JP2009289864A5 - - Google Patents

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Publication number
JP2009289864A5
JP2009289864A5 JP2008139130A JP2008139130A JP2009289864A5 JP 2009289864 A5 JP2009289864 A5 JP 2009289864A5 JP 2008139130 A JP2008139130 A JP 2008139130A JP 2008139130 A JP2008139130 A JP 2008139130A JP 2009289864 A5 JP2009289864 A5 JP 2009289864A5
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JP
Japan
Prior art keywords
thin film
forming
insulating film
overcoat
film
Prior art date
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Granted
Application number
JP2008139130A
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English (en)
Japanese (ja)
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JP2009289864A (ja
JP5521286B2 (ja
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Priority to JP2008139130A priority Critical patent/JP5521286B2/ja
Priority claimed from JP2008139130A external-priority patent/JP5521286B2/ja
Publication of JP2009289864A publication Critical patent/JP2009289864A/ja
Publication of JP2009289864A5 publication Critical patent/JP2009289864A5/ja
Application granted granted Critical
Publication of JP5521286B2 publication Critical patent/JP5521286B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008139130A 2008-05-28 2008-05-28 薄膜素子の製造方法 Expired - Fee Related JP5521286B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008139130A JP5521286B2 (ja) 2008-05-28 2008-05-28 薄膜素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008139130A JP5521286B2 (ja) 2008-05-28 2008-05-28 薄膜素子の製造方法

Publications (3)

Publication Number Publication Date
JP2009289864A JP2009289864A (ja) 2009-12-10
JP2009289864A5 true JP2009289864A5 (https=) 2011-01-06
JP5521286B2 JP5521286B2 (ja) 2014-06-11

Family

ID=41458818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008139130A Expired - Fee Related JP5521286B2 (ja) 2008-05-28 2008-05-28 薄膜素子の製造方法

Country Status (1)

Country Link
JP (1) JP5521286B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
TWI761605B (zh) * 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
JP5052033B2 (ja) * 2005-04-28 2012-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3924303B2 (ja) * 2005-05-09 2007-06-06 ローム株式会社 窒化物半導体素子およびその製法
JP5216201B2 (ja) * 2005-09-27 2013-06-19 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法、液晶表示装置、ｒｆｉｄタグ、発光装置及び電子機器

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