JP5519790B2 - スイッチングが向上したｐｃｍｏ不揮発性抵抗メモリ - Google Patents

スイッチングが向上したｐｃｍｏ不揮発性抵抗メモリ Download PDF

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Publication number
JP5519790B2
JP5519790B2 JP2012520684A JP2012520684A JP5519790B2 JP 5519790 B2 JP5519790 B2 JP 5519790B2 JP 2012520684 A JP2012520684 A JP 2012520684A JP 2012520684 A JP2012520684 A JP 2012520684A JP 5519790 B2 JP5519790 B2 JP 5519790B2
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calcium
layer
manganese oxide
memory cell
praseodymium
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Japanese (ja)
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JP2012533193A (ja
JP2012533193A5 (enExample
Inventor
ローロフス，アンドレアス
ジーゲルト，マルクス
バイスヤナタン，ベヌゴーパラン
ティエン，ウェイ
アン，ヨンチョル
バラクリシュナン，ムラリクリシュナン
ヘイノネン，オーレ
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Seagate Technology LLC
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Seagate Technology LLC
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2012520684A 2009-07-13 2010-07-09 スイッチングが向上したｐｃｍｏ不揮発性抵抗メモリ Active JP5519790B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/501,533 2009-07-13
US12/501,533 US8227783B2 (en) 2009-07-13 2009-07-13 Non-volatile resistive sense memory with praseodymium calcium manganese oxide
PCT/US2010/041545 WO2011008651A1 (en) 2009-07-13 2010-07-09 Pcmo non-volatile resitive memory with improved switching

Publications (3)

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JP2012533193A JP2012533193A (ja) 2012-12-20
JP2012533193A5 JP2012533193A5 (enExample) 2013-02-07
JP5519790B2 true JP5519790B2 (ja) 2014-06-11

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US (2) US8227783B2 (enExample)
JP (1) JP5519790B2 (enExample)
KR (1) KR101357178B1 (enExample)
CN (1) CN102473454B (enExample)
WO (1) WO2011008651A1 (enExample)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7082052B2 (en) 2004-02-06 2006-07-25 Unity Semiconductor Corporation Multi-resistive state element with reactive metal
US20060171200A1 (en) 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US8559209B2 (en) 2011-06-10 2013-10-15 Unity Semiconductor Corporation Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US8937292B2 (en) 2011-08-15 2015-01-20 Unity Semiconductor Corporation Vertical cross point arrays for ultra high density memory applications
US8270193B2 (en) 2010-01-29 2012-09-18 Unity Semiconductor Corporation Local bit lines and methods of selecting the same to access memory elements in cross-point arrays
KR100983175B1 (ko) * 2008-07-03 2010-09-20 광주과학기술원 산화물막과 고체 전해질막을 구비하는 저항 변화 메모리소자, 및 이의 동작방법
US9171613B2 (en) * 2009-07-28 2015-10-27 Hewlett-Packard Development Company, L.P. Memristors with asymmetric electrodes
US20140001429A1 (en) * 2012-07-02 2014-01-02 4-Ds Pty, Ltd Heterojunction oxide memory device with barrier layer
KR101392662B1 (ko) 2009-08-14 2014-05-07 4디-에스 피티와이 엘티디 이종 접합 산화물 비휘발성 메모리 장치
US9634247B2 (en) * 2009-08-14 2017-04-25 4D-S Ltd. Complementary metal oxide heterojunction memory devices and methods related thereto
WO2011043448A1 (ja) * 2009-10-09 2011-04-14 日本電気株式会社 半導体装置及びその製造方法
US8638584B2 (en) 2010-02-02 2014-01-28 Unity Semiconductor Corporation Memory architectures and techniques to enhance throughput for cross-point arrays
US9601692B1 (en) 2010-07-13 2017-03-21 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US9012307B2 (en) 2010-07-13 2015-04-21 Crossbar, Inc. Two terminal resistive switching device structure and method of fabricating
US8946046B1 (en) 2012-05-02 2015-02-03 Crossbar, Inc. Guided path for forming a conductive filament in RRAM
US9570678B1 (en) 2010-06-08 2017-02-14 Crossbar, Inc. Resistive RAM with preferental filament formation region and methods
US8198144B2 (en) 2010-06-11 2012-06-12 Crossbar, Inc. Pillar structure for memory device and method
US8374018B2 (en) 2010-07-09 2013-02-12 Crossbar, Inc. Resistive memory using SiGe material
US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
US8947908B2 (en) 2010-11-04 2015-02-03 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US8569172B1 (en) 2012-08-14 2013-10-29 Crossbar, Inc. Noble metal/non-noble metal electrode for RRAM applications
US8168506B2 (en) 2010-07-13 2012-05-01 Crossbar, Inc. On/off ratio for non-volatile memory device and method
US9401475B1 (en) 2010-08-23 2016-07-26 Crossbar, Inc. Method for silver deposition for a non-volatile memory device
US8889521B1 (en) 2012-09-14 2014-11-18 Crossbar, Inc. Method for silver deposition for a non-volatile memory device
US8492195B2 (en) 2010-08-23 2013-07-23 Crossbar, Inc. Method for forming stackable non-volatile resistive switching memory devices
US8391049B2 (en) 2010-09-29 2013-03-05 Crossbar, Inc. Resistor structure for a non-volatile memory device and method
US8558212B2 (en) 2010-09-29 2013-10-15 Crossbar, Inc. Conductive path in switching material in a resistive random access memory device and control
US8502185B2 (en) 2011-05-31 2013-08-06 Crossbar, Inc. Switching device having a non-linear element
USRE46335E1 (en) 2010-11-04 2017-03-07 Crossbar, Inc. Switching device having a non-linear element
US8377718B2 (en) * 2010-11-10 2013-02-19 Micron Technology, Inc. Methods of forming a crystalline Pr1-xCaxMnO3 (PCMO) material and methods of forming semiconductor device structures comprising crystalline PCMO
US8930174B2 (en) 2010-12-28 2015-01-06 Crossbar, Inc. Modeling technique for resistive random access memory (RRAM) cells
US8791010B1 (en) 2010-12-31 2014-07-29 Crossbar, Inc. Silver interconnects for stacked non-volatile memory device and method
US9153623B1 (en) 2010-12-31 2015-10-06 Crossbar, Inc. Thin film transistor steering element for a non-volatile memory device
US8815696B1 (en) 2010-12-31 2014-08-26 Crossbar, Inc. Disturb-resistant non-volatile memory device using via-fill and etchback technique
US8847196B2 (en) 2011-05-17 2014-09-30 Micron Technology, Inc. Resistive memory cell
US9620206B2 (en) 2011-05-31 2017-04-11 Crossbar, Inc. Memory array architecture with two-terminal memory cells
US9117495B2 (en) 2011-06-10 2015-08-25 Unity Semiconductor Corporation Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
US8891276B2 (en) 2011-06-10 2014-11-18 Unity Semiconductor Corporation Memory array with local bitlines and local-to-global bitline pass gates and gain stages
US10566056B2 (en) 2011-06-10 2020-02-18 Unity Semiconductor Corporation Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
US8619459B1 (en) 2011-06-23 2013-12-31 Crossbar, Inc. High operating speed resistive random access memory
US8946669B1 (en) 2012-04-05 2015-02-03 Crossbar, Inc. Resistive memory device and fabrication methods
US9166163B2 (en) 2011-06-30 2015-10-20 Crossbar, Inc. Sub-oxide interface layer for two-terminal memory
US9564587B1 (en) 2011-06-30 2017-02-07 Crossbar, Inc. Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
US9627443B2 (en) 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
US9252191B2 (en) 2011-07-22 2016-02-02 Crossbar, Inc. Seed layer for a p+ silicon germanium material for a non-volatile memory device and method
US8674724B2 (en) 2011-07-29 2014-03-18 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
US9729155B2 (en) 2011-07-29 2017-08-08 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
US10056907B1 (en) 2011-07-29 2018-08-21 Crossbar, Inc. Field programmable gate array utilizing two-terminal non-volatile memory
KR101285903B1 (ko) * 2011-09-27 2013-07-23 한양대학교 산학협력단 자체 선택 특성을 가지는 3층 저항변화 메모리 및 이의 제조방법
US8787066B2 (en) * 2011-10-26 2014-07-22 Intermolecular, Inc. Method for forming resistive switching memory elements with improved switching behavior
US8878152B2 (en) * 2012-02-29 2014-11-04 Intermolecular, Inc. Nonvolatile resistive memory element with an integrated oxygen isolation structure
US9087576B1 (en) 2012-03-29 2015-07-21 Crossbar, Inc. Low temperature fabrication method for a three-dimensional memory device and structure
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US8658476B1 (en) 2012-04-20 2014-02-25 Crossbar, Inc. Low temperature P+ polycrystalline silicon material for non-volatile memory device
US8796658B1 (en) 2012-05-07 2014-08-05 Crossbar, Inc. Filamentary based non-volatile resistive memory device and method
US8765566B2 (en) 2012-05-10 2014-07-01 Crossbar, Inc. Line and space architecture for a non-volatile memory device
US9583701B1 (en) 2012-08-14 2017-02-28 Crossbar, Inc. Methods for fabricating resistive memory device switching material using ion implantation
US10096653B2 (en) 2012-08-14 2018-10-09 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US8946673B1 (en) 2012-08-24 2015-02-03 Crossbar, Inc. Resistive switching device structure with improved data retention for non-volatile memory device and method
US9224945B2 (en) * 2012-08-30 2015-12-29 Micron Technology, Inc. Resistive memory devices
US9312483B2 (en) 2012-09-24 2016-04-12 Crossbar, Inc. Electrode structure for a non-volatile memory device and method
US9576616B2 (en) 2012-10-10 2017-02-21 Crossbar, Inc. Non-volatile memory with overwrite capability and low write amplification
US11068620B2 (en) 2012-11-09 2021-07-20 Crossbar, Inc. Secure circuit integrated with memory layer
US8982647B2 (en) 2012-11-14 2015-03-17 Crossbar, Inc. Resistive random access memory equalization and sensing
US9412790B1 (en) 2012-12-04 2016-08-09 Crossbar, Inc. Scalable RRAM device architecture for a non-volatile memory device and method
US9406379B2 (en) 2013-01-03 2016-08-02 Crossbar, Inc. Resistive random access memory with non-linear current-voltage relationship
US9112145B1 (en) 2013-01-31 2015-08-18 Crossbar, Inc. Rectified switching of two-terminal memory via real time filament formation
US9324942B1 (en) 2013-01-31 2016-04-26 Crossbar, Inc. Resistive memory cell with solid state diode
US8934280B1 (en) 2013-02-06 2015-01-13 Crossbar, Inc. Capacitive discharge programming for two-terminal memory cells
US9093635B2 (en) 2013-03-14 2015-07-28 Crossbar, Inc. Controlling on-state current for two-terminal memory
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
US10565495B2 (en) * 2015-12-30 2020-02-18 SK Hynix Inc. Synapse and neuromorphic device including the same
WO2018057022A1 (en) * 2016-09-25 2018-03-29 Intel Corporation Barriers for metal filament memory devices
US11476416B2 (en) 2018-03-29 2022-10-18 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US11437573B2 (en) * 2018-03-29 2022-09-06 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
US11621395B2 (en) * 2019-04-26 2023-04-04 Intel Corporation Resistive random-access memory devices and methods of fabrication

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW297158B (enExample) * 1994-05-27 1997-02-01 Hitachi Ltd
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
JP2004140208A (ja) * 2002-10-18 2004-05-13 Toshiba Corp 半導体記憶装置及びその製造方法
US6911361B2 (en) * 2003-03-10 2005-06-28 Sharp Laboratories Of America, Inc. Low temperature processing of PCMO thin film on Ir substrate for RRAM application
US6927120B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Method for forming an asymmetric crystalline structure memory cell
US6939724B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer
US6774054B1 (en) * 2003-08-13 2004-08-10 Sharp Laboratories Of America, Inc. High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application
US7029924B2 (en) * 2003-09-05 2006-04-18 Sharp Laboratories Of America, Inc. Buffered-layer memory cell
US6955992B2 (en) * 2003-09-30 2005-10-18 Sharp Laboratories Of America, Inc. One mask PT/PCMO/PT stack etching process for RRAM applications
US7402456B2 (en) * 2004-04-23 2008-07-22 Sharp Laboratories Of America, Inc. PCMO thin film with memory resistance properties
ATE472157T1 (de) 2004-05-03 2010-07-15 Unity Semiconductor Corp Nichtflüchtiger programmierbarer speicher
US7521705B2 (en) * 2005-08-15 2009-04-21 Micron Technology, Inc. Reproducible resistance variable insulating memory devices having a shaped bottom electrode
US7324366B2 (en) * 2006-04-21 2008-01-29 International Business Machines Corporation Non-volatile memory architecture employing bipolar programmable resistance storage elements
KR100811266B1 (ko) * 2006-09-01 2008-03-07 주식회사 하이닉스반도체 하드 마스크를 이용한 선택적 식각 방법 및 이를 이용한메모리 소자의 소자분리 형성 방법
JP5010891B2 (ja) * 2006-10-16 2012-08-29 富士通株式会社 抵抗変化型素子
JP2009218260A (ja) 2008-03-07 2009-09-24 Fujitsu Ltd 抵抗変化型素子

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Publication number Publication date
US8686388B2 (en) 2014-04-01
US8227783B2 (en) 2012-07-24
US20120273744A1 (en) 2012-11-01
JP2012533193A (ja) 2012-12-20
CN102473454B (zh) 2015-01-14
CN102473454A (zh) 2012-05-23
WO2011008651A1 (en) 2011-01-20
US20110006275A1 (en) 2011-01-13
KR20120034119A (ko) 2012-04-09
KR101357178B1 (ko) 2014-01-29

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