JP2012533193A5 - - Google Patents

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Publication number
JP2012533193A5
JP2012533193A5 JP2012520684A JP2012520684A JP2012533193A5 JP 2012533193 A5 JP2012533193 A5 JP 2012533193A5 JP 2012520684 A JP2012520684 A JP 2012520684A JP 2012520684 A JP2012520684 A JP 2012520684A JP 2012533193 A5 JP2012533193 A5 JP 2012533193A5
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JP
Japan
Prior art keywords
calcium
manganese oxide
praseodymium
memory cell
layer
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JP2012520684A
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English (en)
Japanese (ja)
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JP2012533193A (ja
JP5519790B2 (ja
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Priority claimed from US12/501,533 external-priority patent/US8227783B2/en
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JP2012520684A 2009-07-13 2010-07-09 スイッチングが向上したｐｃｍｏ不揮発性抵抗メモリ Active JP5519790B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/501,533 2009-07-13
US12/501,533 US8227783B2 (en) 2009-07-13 2009-07-13 Non-volatile resistive sense memory with praseodymium calcium manganese oxide
PCT/US2010/041545 WO2011008651A1 (en) 2009-07-13 2010-07-09 Pcmo non-volatile resitive memory with improved switching

Publications (3)

Publication Number Publication Date
JP2012533193A JP2012533193A (ja) 2012-12-20
JP2012533193A5 true JP2012533193A5 (enExample) 2013-02-07
JP5519790B2 JP5519790B2 (ja) 2014-06-11

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JP2012520684A Active JP5519790B2 (ja) 2009-07-13 2010-07-09 スイッチングが向上したｐｃｍｏ不揮発性抵抗メモリ

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US (2) US8227783B2 (enExample)
JP (1) JP5519790B2 (enExample)
KR (1) KR101357178B1 (enExample)
CN (1) CN102473454B (enExample)
WO (1) WO2011008651A1 (enExample)

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