KR101357178B1 - 개선된 스위칭을 갖는 ｐｃｍｏ 비휘발성의 저항성 메모리 - Google Patents

개선된 스위칭을 갖는 ｐｃｍｏ 비휘발성의 저항성 메모리 Download PDF

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KR101357178B1
KR101357178B1 KR1020127003651A KR20127003651A KR101357178B1 KR 101357178 B1 KR101357178 B1 KR 101357178B1 KR 1020127003651 A KR1020127003651 A KR 1020127003651A KR 20127003651 A KR20127003651 A KR 20127003651A KR 101357178 B1 KR101357178 B1 KR 101357178B1
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manganese oxide
diffusion barrier
calcium manganese
barrier layer
oxygen diffusion
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KR20120034119A (ko
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안드레아스 로엘로프스
마르쿠스 시게르트
바이트야나탄 베누고팔란
티안 웨이
용철 안
발라크리쉬난 무랄리크리쉬난
헤인오엔 올레
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시게이트 테크놀로지 엘엘씨
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/51—Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR1020127003651A 2009-07-13 2010-07-09 개선된 스위칭을 갖는 ｐｃｍｏ 비휘발성의 저항성 메모리 Expired - Fee Related KR101357178B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/501,533 2009-07-13
US12/501,533 US8227783B2 (en) 2009-07-13 2009-07-13 Non-volatile resistive sense memory with praseodymium calcium manganese oxide
PCT/US2010/041545 WO2011008651A1 (en) 2009-07-13 2010-07-09 Pcmo non-volatile resitive memory with improved switching

Publications (2)

Publication Number Publication Date
KR20120034119A KR20120034119A (ko) 2012-04-09
KR101357178B1 true KR101357178B1 (ko) 2014-01-29

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US (2) US8227783B2 (enExample)
JP (1) JP5519790B2 (enExample)
KR (1) KR101357178B1 (enExample)
CN (1) CN102473454B (enExample)
WO (1) WO2011008651A1 (enExample)

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Publication number Publication date
US8686388B2 (en) 2014-04-01
US8227783B2 (en) 2012-07-24
US20120273744A1 (en) 2012-11-01
JP2012533193A (ja) 2012-12-20
CN102473454B (zh) 2015-01-14
JP5519790B2 (ja) 2014-06-11
CN102473454A (zh) 2012-05-23
WO2011008651A1 (en) 2011-01-20
US20110006275A1 (en) 2011-01-13
KR20120034119A (ko) 2012-04-09

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