JP5506031B2 - アクチュエータ素子の駆動方法、及びデバイス検査方法 - Google Patents

アクチュエータ素子の駆動方法、及びデバイス検査方法 Download PDF

Info

Publication number
JP5506031B2
JP5506031B2 JP2009297877A JP2009297877A JP5506031B2 JP 5506031 B2 JP5506031 B2 JP 5506031B2 JP 2009297877 A JP2009297877 A JP 2009297877A JP 2009297877 A JP2009297877 A JP 2009297877A JP 5506031 B2 JP5506031 B2 JP 5506031B2
Authority
JP
Japan
Prior art keywords
electric field
voltage
base substrate
piezoelectric body
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009297877A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011138925A5 (enExample
JP2011138925A (ja
Inventor
隆満 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2009297877A priority Critical patent/JP5506031B2/ja
Priority to US12/974,121 priority patent/US8450912B2/en
Publication of JP2011138925A publication Critical patent/JP2011138925A/ja
Publication of JP2011138925A5 publication Critical patent/JP2011138925A5/ja
Application granted granted Critical
Publication of JP5506031B2 publication Critical patent/JP5506031B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0096—For avoiding stiction when the device is in use, i.e. after manufacture has been completed
    • B81C1/00976—Control methods for avoiding stiction, e.g. controlling the bias voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00—Electrostrictive relays; Piezoelectric relays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2041—Beam type
    • H10N30/2042—Cantilevers, i.e. having one fixed end
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00—Electrostrictive relays; Piezoelectric relays
    • H01H2057/006—Micromechanical piezoelectric relay
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
JP2009297877A 2009-12-28 2009-12-28 アクチュエータ素子の駆動方法、及びデバイス検査方法 Active JP5506031B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009297877A JP5506031B2 (ja) 2009-12-28 2009-12-28 アクチュエータ素子の駆動方法、及びデバイス検査方法
US12/974,121 US8450912B2 (en) 2009-12-28 2010-12-21 Actuator element, method of driving actuator element, method of manufacturing actuator element, device inspection method and MEMS switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009297877A JP5506031B2 (ja) 2009-12-28 2009-12-28 アクチュエータ素子の駆動方法、及びデバイス検査方法

Publications (3)

Publication Number Publication Date
JP2011138925A JP2011138925A (ja) 2011-07-14
JP2011138925A5 JP2011138925A5 (enExample) 2012-09-20
JP5506031B2 true JP5506031B2 (ja) 2014-05-28

Family

ID=44186616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009297877A Active JP5506031B2 (ja) 2009-12-28 2009-12-28 アクチュエータ素子の駆動方法、及びデバイス検査方法

Country Status (2)

Country Link
US (1) US8450912B2 (enExample)
JP (1) JP5506031B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5416166B2 (ja) * 2011-05-10 2014-02-12 株式会社アドバンテスト スイッチ装置および試験装置
JP5756786B2 (ja) 2012-09-19 2015-07-29 富士フイルム株式会社 圧電デバイス及びその使用方法
KR101593989B1 (ko) * 2014-07-04 2016-02-17 한국기술교육대학교 산학협력단 액정 유전층을 포함한 정전기력 기반 작동기
JP6258241B2 (ja) * 2015-02-27 2018-01-10 富士フイルム株式会社 圧電アクチュエータ
CN106276776B (zh) * 2015-05-13 2019-03-15 无锡华润上华科技有限公司 Mems双层悬浮微结构的制作方法和mems红外探测器
CN111044804B (zh) * 2019-12-12 2022-05-20 佛山市卓膜科技有限公司 一种压电材料的压电系数测量方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11348285A (ja) * 1998-06-10 1999-12-21 Matsushita Electric Ind Co Ltd インクジェット記録装置とその製造方法
JP4114363B2 (ja) * 2002-02-19 2008-07-09 セイコーエプソン株式会社 圧電アクチュエータ、その駆動方法、圧電アクチュエータの製造方法および液滴噴射装置
JP4487536B2 (ja) * 2002-11-15 2010-06-23 パナソニック株式会社 圧電体アクチュエータの駆動方法および圧電体アクチュエータ並びにこれを用いたディスク記録再生装置
KR100761476B1 (ko) 2004-07-13 2007-09-27 삼성전자주식회사 반도체를 이용한 멤스 ｒｆ-스위치
JP4678832B2 (ja) * 2004-07-27 2011-04-27 日本碍子株式会社 光源
JP4417861B2 (ja) * 2005-01-31 2010-02-17 富士通株式会社 マイクロスイッチング素子
JP2008091167A (ja) * 2006-09-29 2008-04-17 Toshiba Corp マイクロメカニカルデバイス
JP2008218547A (ja) * 2007-03-01 2008-09-18 Fujifilm Corp 圧電体とその駆動方法、圧電素子、及び液体吐出装置
EP1973177B8 (en) * 2007-03-22 2015-01-21 FUJIFILM Corporation Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device
JP2009009884A (ja) 2007-06-29 2009-01-15 Mitsubishi Electric Corp Ｍｅｍｓスイッチ及びその製造方法
JP2009136934A (ja) 2007-12-04 2009-06-25 Seiko Epson Corp Ｍｅｍｓデバイスの製造方法
JP5081038B2 (ja) 2008-03-31 2012-11-21 パナソニック株式会社 Ｍｅｍｓスイッチおよびその製造方法
JP4438893B1 (ja) * 2009-02-04 2010-03-24 富士フイルム株式会社 圧電体とその製造方法、圧電素子、及び液体吐出装置

Also Published As

Publication number Publication date
US20110156537A1 (en) 2011-06-30
JP2011138925A (ja) 2011-07-14
US8450912B2 (en) 2013-05-28

Similar Documents

Publication Publication Date Title
JP5506035B2 (ja) アクチュエータの製造方法
US11165011B2 (en) Piezoelectric element and method for manufacturing piezoelectric element
JP5506031B2 (ja) アクチュエータ素子の駆動方法、及びデバイス検査方法
CN101513990B (zh) 致动器
US8476804B2 (en) Piezoelectric MEMS element, voltage control oscillator, communication apparatus, and method of manufacturing piezoelectric drive type MEMS element
US7847469B2 (en) Micro-cantilever
US8847466B2 (en) Piezoelectric bimorph switch
JP6464049B2 (ja) 積層構造体、圧電素子および圧電素子の製造方法
WO2004038819A2 (en) Piezoelectric switch for tunable electronic components
JP6346693B2 (ja) 圧電体素子の製造方法
JP6202202B2 (ja) 圧電薄膜、圧電薄膜素子及びターゲット並びに圧電薄膜及び圧電薄膜素子の製造方法
US20230013976A1 (en) Movable piezo element and method for producing a movable piezo element
JP6426061B2 (ja) 積層薄膜構造体の製造方法、積層薄膜構造体及びそれを備えた圧電素子
US7786653B2 (en) MEMS piezoelectric switch
JP2011138925A5 (enExample)
JP2008091167A (ja) マイクロメカニカルデバイス
JP5660216B2 (ja) 薄膜デバイスおよび薄膜デバイスの製造方法
JP2014187362A (ja) 圧電ｍｅｍｓデバイスおよびその製造方法
JP2013251355A (ja) 圧電体膜素子の製造方法、圧電体膜素子、及び圧電体デバイス
US20230416108A1 (en) Piezoelectric element, piezoelectric film, and manufacturing method for piezoelectric film
CN116235650A (zh) 带压电膜基板及压电元件

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120806

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131113

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131114

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140114

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140313

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140314

R150 Certificate of patent or registration of utility model

Ref document number: 5506031

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250