JP5496189B2 - 塩素化ナフタリンテトラカルボン酸誘導体、その製造、及び有機エレクトロニクスにおけるその使用 - Google Patents

塩素化ナフタリンテトラカルボン酸誘導体、その製造、及び有機エレクトロニクスにおけるその使用 Download PDF

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JP5496189B2
JP5496189B2 JP2011512145A JP2011512145A JP5496189B2 JP 5496189 B2 JP5496189 B2 JP 5496189B2 JP 2011512145 A JP2011512145 A JP 2011512145A JP 2011512145 A JP2011512145 A JP 2011512145A JP 5496189 B2 JP5496189 B2 JP 5496189B2
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JP2011522097A (ja
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ケーネマン マルティン
マタン ガブリエレ
ヴュルトナー フランク
レーガー コーネリア
シュミット リューディガー
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/06—Luminescent materials, e.g. electroluminescent or chemiluminescent containing organic luminescent materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/06—Peri-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D491/00—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00
    • C07D491/02—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains two hetero rings
    • C07D491/06—Peri-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/06—Peri-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Photovoltaic Devices (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
JP2011512145A 2008-06-06 2009-06-05 塩素化ナフタリンテトラカルボン酸誘導体、その製造、及び有機エレクトロニクスにおけるその使用 Expired - Fee Related JP5496189B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008027214.0 2008-06-06
DE102008027214 2008-06-06
US11676008P 2008-11-21 2008-11-21
US61/116,760 2008-11-21
PCT/EP2009/056942 WO2009147237A1 (en) 2008-06-06 2009-06-05 Chlorinated naphthalenetetracarboxylic acid derivatives, preparation thereof and use thereof in organic electronics

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JP2011522097A JP2011522097A (ja) 2011-07-28
JP2011522097A5 JP2011522097A5 (enExample) 2012-07-26
JP5496189B2 true JP5496189B2 (ja) 2014-05-21

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US (2) US9512354B2 (enExample)
EP (1) EP2297274B1 (enExample)
JP (1) JP5496189B2 (enExample)
KR (1) KR101702487B1 (enExample)
CN (1) CN102057015B (enExample)
TW (1) TWI480280B (enExample)
WO (1) WO2009147237A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2168181B1 (de) * 2007-07-10 2021-05-12 Heliatek GmbH Mischungen zur herstellung von photoaktiven schichten für organische solarzellen und organische photodetektoren
KR101702487B1 (ko) 2008-06-06 2017-02-06 바스프 에스이 염소화 나프탈렌테트라카르복실산 유도체, 이의 제조 방법 및 유기 전자 장치에서의 그 용도
JP2012503320A (ja) * 2008-09-19 2012-02-02 ビーエーエスエフ ソシエタス・ヨーロピア 有機太陽電池におけるジベンゾテトラフェニルペリフランテンの使用
TWI422573B (zh) * 2010-02-11 2014-01-11 Nat Univ Tsing Hua 有機薄膜電晶體暨其製備方法
US20110203649A1 (en) * 2010-02-19 2011-08-25 Basf Se Use of indanthrene compounds in organic photovoltaics
US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
JP5733612B2 (ja) * 2011-03-08 2015-06-10 国立大学法人信州大学 有機半導体薄膜用材料、該材料を用いた有機半導体薄膜の形成方法および有機薄膜トランジスタ
DE102011013897A1 (de) * 2011-03-11 2012-09-13 Technische Universität Dresden Organische Solarzelle
EP2521195A1 (en) * 2011-03-15 2012-11-07 Basf Se Tetraazaperopyrene compounds and their use as n-type semiconductors
WO2015059647A1 (en) * 2013-10-23 2015-04-30 Basf Se Crystalline form of n,n'-bis-(heptafluorobutyl)-2,6-dichloro-1,4,5,8-naphthalene tetracarboxylic diimide and the use thereof
JP6622229B2 (ja) * 2014-06-17 2019-12-18 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se N−フルオロアルキル置換されたジブロモナフタレンジイミドおよびそれらの半導体としての使用
KR102417717B1 (ko) * 2014-08-18 2022-07-07 주식회사 클랩 결정질 유기 반도체 물질을 제조하는 방법
US10333072B2 (en) * 2014-08-28 2019-06-25 Basf Se Thin film semiconductor comprising a small-molecular semiconducting compound and a non-conductive polymer
JP7114578B2 (ja) 2016-10-06 2022-08-08 ビーエーエスエフ ソシエタス・ヨーロピア 2-フェニルフェノキシ置換ペリレンビスイミド化合物およびそれらの使用
CN108063180A (zh) 2018-01-05 2018-05-22 华南理工大学 一种酰亚胺类化合物阴离子态薄膜及在p型热电器件中的应用
WO2019134360A1 (zh) * 2018-01-05 2019-07-11 华南理工大学 一种具有室温铁磁性的酰亚胺类化合物阴离子态材料及其应用
JP7046395B2 (ja) 2018-03-07 2022-04-04 クラップ カンパニー リミテッド トップゲート・ボトムコンタクト有機電界効果トランジスタを製造するためのパターニング方法
CN112074963A (zh) 2018-03-08 2020-12-11 Clap有限公司 半导体性单壁碳纳米管及包括有机半导体材料的有机场效应晶体管
EP3735430B1 (en) 2018-06-26 2023-09-13 Clap Co., Ltd. Vinylether-based polymer as dielectric
CN110102345B (zh) * 2019-05-15 2021-09-10 扬州大学 催化烯烃氧化裂解的含硒共聚物催化剂的合成方法
KR102477550B1 (ko) 2020-07-09 2022-12-15 연세대학교 산학협력단 강유전 형광 자기조립 화합물 및 이를 포함하는 유기 전자 소자
KR102780907B1 (ko) * 2020-08-10 2025-03-12 아주대학교산학협력단 전하 이동 도핑에 의해 전기 전도도가 변화할 수 있는 유기 반도체 소재 및 이를 구비하는 유기 전계 효과 트랜지스터 기반 가스 센서

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000168A1 (de) 1980-01-04 1981-07-09 Bayer Ag, 5090 Leverkusen Elektrisch leitende cyclische polyimide
US4461922A (en) 1983-02-14 1984-07-24 Atlantic Richfield Company Solar cell module
DE3620332A1 (de) 1986-06-18 1987-12-23 Bayer Ag Verfahren zur herstellung von tetrachlornaphthalintetracarbonsaeuredianhydrid und -diimid, sowie die neue verbindung 2.3.6.7-tetrachlornaphthalin-1.4.5.8.- tetracarbonsaeurediimid
DE3703131A1 (de) 1987-02-03 1988-08-11 Bayer Ag 2.3.6.7-tetrafluornaphthalintetracarbonsaeurebisimide, verfahren zu ihrer herstellung und ihre verwendung
JPH02255789A (ja) 1989-03-29 1990-10-16 Asahi Chem Ind Co Ltd 有機電場発光素子
JPH0527469A (ja) 1991-07-19 1993-02-05 Kao Corp 電子写真感光体
JP3326552B2 (ja) 1997-11-14 2002-09-24 正視 藤井 多段深埋設接地電極
US6451415B1 (en) 1998-08-19 2002-09-17 The Trustees Of Princeton University Organic photosensitive optoelectronic device with an exciton blocking layer
US6198091B1 (en) 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with a mixed electrical configuration
US6198092B1 (en) 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with an electrically parallel configuration
DE60031729T2 (de) 1999-05-13 2007-09-06 The Trustees Of Princeton University Lichtemittierende, organische, auf elektrophosphoreszenz basierende anordnung mit sehr hoher quantenausbeute
AU2002327747A1 (en) 2001-09-27 2003-04-07 3M Innovative Properties Company Substituted pentacene semiconductors
US20030097010A1 (en) 2001-09-27 2003-05-22 Vogel Dennis E. Process for preparing pentacene derivatives
DE10148172B4 (de) 2001-09-28 2007-11-15 Qimonda Ag Fluoreszierende Naphthalin-1,4,5,8-tetracarbonsäurebisimide mit elektronenschiebendem Substituenten am Kern
JP4295107B2 (ja) 2001-10-22 2009-07-15 三井化学株式会社 イミド化合物、及び該化合物を用いる光記録媒体
US6911716B2 (en) 2002-09-09 2005-06-28 Lucent Technologies, Inc. Bipolar transistors with vertical structures
US6831771B2 (en) 2003-01-08 2004-12-14 Sipix Imaging Inc. Electronic whiteboard using electrophoretic display
US7675057B2 (en) 2003-03-19 2010-03-09 Technische Universitaet Dresden Photoactive component with organic layers
DE10338550A1 (de) 2003-08-19 2005-03-31 Basf Ag Übergangsmetallkomplexe mit Carbenliganden als Emitter für organische Licht-emittierende Dioden (OLEDs)
US7592539B2 (en) 2003-11-07 2009-09-22 The Trustees Of Princeton University Solid state photosensitive devices which employ isolated photosynthetic complexes
JP4208881B2 (ja) * 2003-12-26 2009-01-14 キヤノン株式会社 電子写真感光体、プロセスカートリッジおよび電子写真装置
KR101148868B1 (ko) 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 n-형 반도체 및 관련된 소자
US20050224905A1 (en) 2004-04-13 2005-10-13 Forrest Stephen R High efficiency organic photovoltaic cells employing hybridized mixed-planar heterojunctions
WO2006086082A2 (en) 2004-12-23 2006-08-17 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
DE102005061997A1 (de) * 2005-12-23 2007-07-05 Basf Ag Naphthalintetracarbonsäurederivate und deren Verwendung
US7795145B2 (en) 2006-02-15 2010-09-14 Basf Aktiengesellschaft Patterning crystalline compounds on surfaces
WO2007093643A1 (de) * 2006-02-17 2007-08-23 Basf Se Fluorierte rylentetracarbonsäurederivate und deren verwendung
EP1843407A1 (de) * 2006-04-07 2007-10-10 Basf Aktiengesellschaft Flüssig-kristalline Rylentetracarbonsäurederivate und deren Verwendung
US20080009092A1 (en) 2006-07-06 2008-01-10 Basf Aktiengesellschaft Use of chlorinated copper phthalocyanines as air-stable n-channel organic semiconductors
US20080035914A1 (en) 2006-08-11 2008-02-14 Basf Aktiengesellschaft Use of perylene diimide derivatives as air-stable n-channel organic semiconductors
WO2009024512A1 (de) 2007-08-17 2009-02-26 Basf Se Halogenhaltige perylentetracarbonsäurederivate und deren verwendung
WO2009037283A1 (de) 2007-09-18 2009-03-26 Basf Se Verfahren zur herstellung von mit rylentetracarbonsäurediimiden beschichteten substraten
KR101702487B1 (ko) 2008-06-06 2017-02-06 바스프 에스이 염소화 나프탈렌테트라카르복실산 유도체, 이의 제조 방법 및 유기 전자 장치에서의 그 용도

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Publication number Publication date
TWI480280B (zh) 2015-04-11
EP2297274A1 (en) 2011-03-23
TW201002709A (en) 2010-01-16
CN102057015B (zh) 2015-07-22
EP2297274B1 (en) 2014-11-19
US20170174676A1 (en) 2017-06-22
WO2009147237A9 (en) 2010-01-28
CN102057015A (zh) 2011-05-11
WO2009147237A1 (en) 2009-12-10
US9512354B2 (en) 2016-12-06
KR101702487B1 (ko) 2017-02-06
JP2011522097A (ja) 2011-07-28
US10214525B2 (en) 2019-02-26
KR20110015454A (ko) 2011-02-15
US20090301552A1 (en) 2009-12-10

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