KR101702487B1 - 염소화 나프탈렌테트라카르복실산 유도체, 이의 제조 방법 및 유기 전자 장치에서의 그 용도 - Google Patents

염소화 나프탈렌테트라카르복실산 유도체, 이의 제조 방법 및 유기 전자 장치에서의 그 용도 Download PDF

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KR101702487B1
KR101702487B1 KR1020107029908A KR20107029908A KR101702487B1 KR 101702487 B1 KR101702487 B1 KR 101702487B1 KR 1020107029908 A KR1020107029908 A KR 1020107029908A KR 20107029908 A KR20107029908 A KR 20107029908A KR 101702487 B1 KR101702487 B1 KR 101702487B1
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formula
alkyl
transport material
hydrogen
compound
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KR20110015454A (ko
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마르틴 쾨네만
가브리엘 마테른
프랑크 웨른트너
프랑크 웨른트너
코넬리아 뢰저
뤼디거 슈미트
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/06—Peri-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D491/00—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00
    • C07D491/02—Heterocyclic compounds containing in the condensed ring system both one or more rings having oxygen atoms as the only ring hetero atoms and one or more rings having nitrogen atoms as the only ring hetero atoms, not provided for by groups C07D451/00 - C07D459/00, C07D463/00, C07D477/00 or C07D489/00 in which the condensed system contains two hetero rings
    • C07D491/06—Peri-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/06—Peri-condensed systems
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00—Other synthetic dyes of known constitution
    • C09B57/08—Naphthalimide dyes; Phthalimide dyes
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Photovoltaic Devices (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
KR1020107029908A 2008-06-06 2009-06-05 염소화 나프탈렌테트라카르복실산 유도체, 이의 제조 방법 및 유기 전자 장치에서의 그 용도 Expired - Fee Related KR101702487B1 (ko)

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Application Number Priority Date Filing Date Title
DE102008027214.0 2008-06-06
DE102008027214 2008-06-06
US11676008P 2008-11-21 2008-11-21
US61/116,760 2008-11-21
PCT/EP2009/056942 WO2009147237A1 (en) 2008-06-06 2009-06-05 Chlorinated naphthalenetetracarboxylic acid derivatives, preparation thereof and use thereof in organic electronics

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KR101702487B1 true KR101702487B1 (ko) 2017-02-06

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US (2) US9512354B2 (enExample)
EP (1) EP2297274B1 (enExample)
JP (1) JP5496189B2 (enExample)
KR (1) KR101702487B1 (enExample)
CN (1) CN102057015B (enExample)
TW (1) TWI480280B (enExample)
WO (1) WO2009147237A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009007340A1 (de) * 2007-07-10 2009-01-15 Basf Se Mischungen zur herstellung von photoaktiven schichten für organische solarzellen und organische photodetektoren
JP5496189B2 (ja) 2008-06-06 2014-05-21 ビーエーエスエフ ソシエタス・ヨーロピア 塩素化ナフタリンテトラカルボン酸誘導体、その製造、及び有機エレクトロニクスにおけるその使用
JP2012503320A (ja) * 2008-09-19 2012-02-02 ビーエーエスエフ ソシエタス・ヨーロピア 有機太陽電池におけるジベンゾテトラフェニルペリフランテンの使用
TWI422573B (zh) * 2010-02-11 2014-01-11 Nat Univ Tsing Hua 有機薄膜電晶體暨其製備方法
US20110203649A1 (en) * 2010-02-19 2011-08-25 Basf Se Use of indanthrene compounds in organic photovoltaics
US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
JP5733612B2 (ja) * 2011-03-08 2015-06-10 国立大学法人信州大学 有機半導体薄膜用材料、該材料を用いた有機半導体薄膜の形成方法および有機薄膜トランジスタ
DE102011013897A1 (de) * 2011-03-11 2012-09-13 Technische Universität Dresden Organische Solarzelle
EP2521195A1 (en) * 2011-03-15 2012-11-07 Basf Se Tetraazaperopyrene compounds and their use as n-type semiconductors
WO2015059647A1 (en) * 2013-10-23 2015-04-30 Basf Se Crystalline form of n,n'-bis-(heptafluorobutyl)-2,6-dichloro-1,4,5,8-naphthalene tetracarboxylic diimide and the use thereof
CN106459748B (zh) * 2014-06-17 2019-08-23 巴斯夫欧洲公司 N-氟烷基取代的二溴萘二酰亚胺及其用作半导体的用途
EP3183757B1 (en) * 2014-08-18 2022-05-04 CLAP Co., Ltd. Organic semiconductor composition comprising liquid medium
KR102364609B1 (ko) * 2014-08-28 2022-02-18 주식회사 클랩 소분자 반전도성 화합물 및 비-전도성 중합체를 포함하는 박막 반도체
CN109803969B (zh) * 2016-10-06 2022-08-05 巴斯夫欧洲公司 2-苯基苯氧基取代的苝双酰亚胺化合物及其用途
CN108063180A (zh) 2018-01-05 2018-05-22 华南理工大学 一种酰亚胺类化合物阴离子态薄膜及在p型热电器件中的应用
WO2019134360A1 (zh) * 2018-01-05 2019-07-11 华南理工大学 一种具有室温铁磁性的酰亚胺类化合物阴离子态材料及其应用
EP3762979A1 (en) 2018-03-07 2021-01-13 Clap Co., Ltd. Patterning method for preparing top-gate, bottom-contact organic field effect transistors
JP7075682B2 (ja) 2018-03-08 2022-05-26 クラップ カンパニー リミテッド 半導電性単層カーボンナノチューブ及び有機半導電性材料を含む有機電界効果トランジスタ
CN112074548B (zh) 2018-06-26 2023-07-25 Clap有限公司 作为电介质的乙烯醚类聚合物
CN110102345B (zh) * 2019-05-15 2021-09-10 扬州大学 催化烯烃氧化裂解的含硒共聚物催化剂的合成方法
KR102477550B1 (ko) * 2020-07-09 2022-12-15 연세대학교 산학협력단 강유전 형광 자기조립 화합물 및 이를 포함하는 유기 전자 소자
KR102780907B1 (ko) * 2020-08-10 2025-03-12 아주대학교산학협력단 전하 이동 도핑에 의해 전기 전도도가 변화할 수 있는 유기 반도체 소재 및 이를 구비하는 유기 전계 효과 트랜지스터 기반 가스 센서

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030153005A1 (en) * 2001-09-28 2003-08-14 Gunter Schmid Fluorescent naphthalene -1,4,5,8-tetracarboxylic bisimides with an electron-donating substituent on the nucleus
WO2007116001A2 (de) * 2006-04-07 2007-10-18 Basf Se Flüssig-kristalline rylentetracarbonsäurederivate und deren verwendung

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000168A1 (de) * 1980-01-04 1981-07-09 Bayer Ag, 5090 Leverkusen Elektrisch leitende cyclische polyimide
US4461922A (en) 1983-02-14 1984-07-24 Atlantic Richfield Company Solar cell module
DE3620332A1 (de) 1986-06-18 1987-12-23 Bayer Ag Verfahren zur herstellung von tetrachlornaphthalintetracarbonsaeuredianhydrid und -diimid, sowie die neue verbindung 2.3.6.7-tetrachlornaphthalin-1.4.5.8.- tetracarbonsaeurediimid
DE3703131A1 (de) 1987-02-03 1988-08-11 Bayer Ag 2.3.6.7-tetrafluornaphthalintetracarbonsaeurebisimide, verfahren zu ihrer herstellung und ihre verwendung
JPH02255789A (ja) 1989-03-29 1990-10-16 Asahi Chem Ind Co Ltd 有機電場発光素子
JPH0527469A (ja) 1991-07-19 1993-02-05 Kao Corp 電子写真感光体
JP3326552B2 (ja) 1997-11-14 2002-09-24 正視 藤井 多段深埋設接地電極
US6451415B1 (en) * 1998-08-19 2002-09-17 The Trustees Of Princeton University Organic photosensitive optoelectronic device with an exciton blocking layer
US6198091B1 (en) 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with a mixed electrical configuration
US6198092B1 (en) 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with an electrically parallel configuration
KR100934420B1 (ko) 1999-05-13 2009-12-29 더 트러스티즈 오브 프린스턴 유니버시티 전계인광에 기초한 고 효율의 유기 발광장치
AU2002327747A1 (en) * 2001-09-27 2003-04-07 3M Innovative Properties Company Substituted pentacene semiconductors
US20030097010A1 (en) 2001-09-27 2003-05-22 Vogel Dennis E. Process for preparing pentacene derivatives
JP4295107B2 (ja) 2001-10-22 2009-07-15 三井化学株式会社 イミド化合物、及び該化合物を用いる光記録媒体
US6911716B2 (en) * 2002-09-09 2005-06-28 Lucent Technologies, Inc. Bipolar transistors with vertical structures
US6831771B2 (en) 2003-01-08 2004-12-14 Sipix Imaging Inc. Electronic whiteboard using electrophoretic display
AU2004221377B2 (en) 2003-03-19 2009-07-16 Heliatek Gmbh Photoactive component comprising organic layers
DE10338550A1 (de) 2003-08-19 2005-03-31 Basf Ag Übergangsmetallkomplexe mit Carbenliganden als Emitter für organische Licht-emittierende Dioden (OLEDs)
US7592539B2 (en) 2003-11-07 2009-09-22 The Trustees Of Princeton University Solid state photosensitive devices which employ isolated photosynthetic complexes
WO2005066718A1 (ja) * 2003-12-26 2005-07-21 Canon Kabushiki Kaisha 電子写真感光体、プロセスカートリッジおよび電子写真装置
KR101148868B1 (ko) * 2004-01-26 2012-05-29 노오쓰웨스턴 유니버시티 페릴렌 ｎ-형 반도체 및 관련된 소자
US20050224905A1 (en) * 2004-04-13 2005-10-13 Forrest Stephen R High efficiency organic photovoltaic cells employing hybridized mixed-planar heterojunctions
EP1839339A2 (en) * 2004-12-23 2007-10-03 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
DE102005061997A1 (de) * 2005-12-23 2007-07-05 Basf Ag Naphthalintetracarbonsäurederivate und deren Verwendung
US7795145B2 (en) 2006-02-15 2010-09-14 Basf Aktiengesellschaft Patterning crystalline compounds on surfaces
JP2009528277A (ja) * 2006-02-17 2009-08-06 ビーエーエスエフ ソシエタス・ヨーロピア フッ素化されたリレンテトラカルボン酸誘導体及びそれらの使用
US20080009092A1 (en) * 2006-07-06 2008-01-10 Basf Aktiengesellschaft Use of chlorinated copper phthalocyanines as air-stable n-channel organic semiconductors
US20080035914A1 (en) * 2006-08-11 2008-02-14 Basf Aktiengesellschaft Use of perylene diimide derivatives as air-stable n-channel organic semiconductors
KR101580338B1 (ko) 2007-08-17 2015-12-23 바스프 에스이 할로겐-함유 페릴렌테트라카르복실산 유도체 및 이의 용도
US20090078312A1 (en) * 2007-09-18 2009-03-26 Basf Se Verfahren zur herstellung von mit rylentetracarbonsaeurediimiden beschichteten substraten
JP5496189B2 (ja) 2008-06-06 2014-05-21 ビーエーエスエフ ソシエタス・ヨーロピア 塩素化ナフタリンテトラカルボン酸誘導体、その製造、及び有機エレクトロニクスにおけるその使用

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030153005A1 (en) * 2001-09-28 2003-08-14 Gunter Schmid Fluorescent naphthalene -1,4,5,8-tetracarboxylic bisimides with an electron-donating substituent on the nucleus
WO2007116001A2 (de) * 2006-04-07 2007-10-18 Basf Se Flüssig-kristalline rylentetracarbonsäurederivate und deren verwendung

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WO2009147237A9 (en) 2010-01-28
JP2011522097A (ja) 2011-07-28
TWI480280B (zh) 2015-04-11
CN102057015B (zh) 2015-07-22
KR20110015454A (ko) 2011-02-15
WO2009147237A1 (en) 2009-12-10
JP5496189B2 (ja) 2014-05-21
EP2297274B1 (en) 2014-11-19
US20170174676A1 (en) 2017-06-22
EP2297274A1 (en) 2011-03-23
US20090301552A1 (en) 2009-12-10
CN102057015A (zh) 2011-05-11
US9512354B2 (en) 2016-12-06
US10214525B2 (en) 2019-02-26
TW201002709A (en) 2010-01-16

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