JP5480151B2 - リソグラフィ投影装置および摂動因子を補償する方法 - Google Patents

リソグラフィ投影装置および摂動因子を補償する方法 Download PDF

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Publication number
JP5480151B2
JP5480151B2 JP2010533023A JP2010533023A JP5480151B2 JP 5480151 B2 JP5480151 B2 JP 5480151B2 JP 2010533023 A JP2010533023 A JP 2010533023A JP 2010533023 A JP2010533023 A JP 2010533023A JP 5480151 B2 JP5480151 B2 JP 5480151B2
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Japan
Prior art keywords
radiation
projection apparatus
data
lithographic projection
additional
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Expired - Fee Related
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JP2010533023A
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English (en)
Japanese (ja)
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JP2011503870A (ja
JP2011503870A5 (enExample
Inventor
スホート，ジャン，ベルナルド，プレヘルムス ヴァン
マース，ディーデリック，ジャン
ディゼルドンク，アントニウス，ヨハネス，ヨセウス ヴァン
デル ラーン，ハンス ヴァン
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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Publication of JP2011503870A5 publication Critical patent/JP2011503870A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010533023A 2007-11-08 2008-11-07 リソグラフィ投影装置および摂動因子を補償する方法 Expired - Fee Related JP5480151B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US99627707P 2007-11-08 2007-11-08
US60/996,277 2007-11-08
PCT/NL2008/050708 WO2009061196A1 (en) 2007-11-08 2008-11-07 Lithographic projection apparatus and method of compensating perturbation factors

Publications (3)

Publication Number Publication Date
JP2011503870A JP2011503870A (ja) 2011-01-27
JP2011503870A5 JP2011503870A5 (enExample) 2011-12-22
JP5480151B2 true JP5480151B2 (ja) 2014-04-23

Family

ID=40269627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010533023A Expired - Fee Related JP5480151B2 (ja) 2007-11-08 2008-11-07 リソグラフィ投影装置および摂動因子を補償する方法

Country Status (5)

Country Link
US (1) US8570489B2 (enExample)
JP (1) JP5480151B2 (enExample)
KR (1) KR101509553B1 (enExample)
CN (1) CN101849210B (enExample)
WO (1) WO2009061196A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201224678A (en) * 2010-11-04 2012-06-16 Orc Mfg Co Ltd Exposure device
DE102011006189A1 (de) * 2011-03-28 2012-06-06 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Belichten einer lichtempfindlichen Schicht
JP2014229802A (ja) * 2013-05-23 2014-12-08 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、及び物品の製造方法
JP6321189B2 (ja) * 2014-01-27 2018-05-09 東京エレクトロン株式会社 パターン化膜の臨界寸法をシフトするシステムおよび方法
WO2016142169A1 (en) * 2015-03-06 2016-09-15 Asml Netherlands B.V. Focus-dose co-optimization based on overlapping process window
WO2017011188A1 (en) * 2015-07-13 2017-01-19 Applied Materials, Inc. Quarter wave light splitting

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035516A (ja) * 1983-08-08 1985-02-23 Hitachi Ltd 露光方法及び装置
JPS60107835A (ja) 1983-11-17 1985-06-13 Hitachi Ltd 投影露光装置
EP1255162A1 (en) * 2001-05-04 2002-11-06 ASML Netherlands B.V. Lithographic apparatus
EP1586946A3 (en) * 2004-04-14 2007-01-17 Carl Zeiss SMT AG Optical system of a microlithographic projection exposure apparatus
EP1619556A1 (en) * 2004-07-20 2006-01-25 Interuniversitair Micro-Elektronica Centrum Method and masks for reducing the impact of stray light during optical lithography
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
US7199863B2 (en) 2004-12-21 2007-04-03 Asml Netherlands B.V. Method of imaging using lithographic projection apparatus
US7209217B2 (en) * 2005-04-08 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing plural patterning devices
JP2007019098A (ja) * 2005-07-05 2007-01-25 Elpida Memory Inc 露光装置及び露光方法
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
JP2007281169A (ja) * 2006-04-06 2007-10-25 Nikon Corp 投影光学系、露光装置及び露光方法、並びにデバイス製造方法
DE102008001800A1 (de) * 2007-05-25 2008-11-27 Carl Zeiss Smt Ag Projektionsobjektiv für die Mikrolithographie, Mikrolithographie-Projektionsbelichtungsanlage mit einem derartigen Projektionsobjektiv, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement

Also Published As

Publication number Publication date
JP2011503870A (ja) 2011-01-27
CN101849210A (zh) 2010-09-29
US8570489B2 (en) 2013-10-29
KR101509553B1 (ko) 2015-04-06
US20100321657A1 (en) 2010-12-23
WO2009061196A1 (en) 2009-05-14
KR20100106351A (ko) 2010-10-01
CN101849210B (zh) 2012-11-14

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