KR101509553B1 - 리소그래피 투영 장치 및 섭동 인자들을 보상하는 방법 - Google Patents

리소그래피 투영 장치 및 섭동 인자들을 보상하는 방법 Download PDF

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Publication number
KR101509553B1
KR101509553B1 KR1020107012542A KR20107012542A KR101509553B1 KR 101509553 B1 KR101509553 B1 KR 101509553B1 KR 1020107012542 A KR1020107012542 A KR 1020107012542A KR 20107012542 A KR20107012542 A KR 20107012542A KR 101509553 B1 KR101509553 B1 KR 101509553B1
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South Korea
Prior art keywords
radiation
pattern
data
projection apparatus
lithographic projection
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English (en)
Korean (ko)
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KR20100106351A (ko
Inventor
얀 베르나르트 플레첼무스 반 슈트
디에데릭 얀 마스
안토니우스 요한네스 요제푸스 반 디셀동크
한스 반 데르 란
Original Assignee
에이에스엠엘 네델란즈 비.브이.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107012542A 2007-11-08 2008-11-07 리소그래피 투영 장치 및 섭동 인자들을 보상하는 방법 Expired - Fee Related KR101509553B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US99627707P 2007-11-08 2007-11-08
US60/996,277 2007-11-08
PCT/NL2008/050708 WO2009061196A1 (en) 2007-11-08 2008-11-07 Lithographic projection apparatus and method of compensating perturbation factors

Publications (2)

Publication Number Publication Date
KR20100106351A KR20100106351A (ko) 2010-10-01
KR101509553B1 true KR101509553B1 (ko) 2015-04-06

Family

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KR1020107012542A Expired - Fee Related KR101509553B1 (ko) 2007-11-08 2008-11-07 리소그래피 투영 장치 및 섭동 인자들을 보상하는 방법

Country Status (5)

Country Link
US (1) US8570489B2 (enExample)
JP (1) JP5480151B2 (enExample)
KR (1) KR101509553B1 (enExample)
CN (1) CN101849210B (enExample)
WO (1) WO2009061196A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201224678A (en) * 2010-11-04 2012-06-16 Orc Mfg Co Ltd Exposure device
DE102011006189A1 (de) * 2011-03-28 2012-06-06 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Belichten einer lichtempfindlichen Schicht
JP2014229802A (ja) * 2013-05-23 2014-12-08 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、及び物品の製造方法
US9977339B2 (en) * 2014-01-27 2018-05-22 Tokyo Electron Limited System and method for shifting critical dimensions of patterned films
WO2016142169A1 (en) * 2015-03-06 2016-09-15 Asml Netherlands B.V. Focus-dose co-optimization based on overlapping process window
WO2017011188A1 (en) 2015-07-13 2017-01-19 Applied Materials, Inc. Quarter wave light splitting

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107835A (ja) * 1983-11-17 1985-06-13 Hitachi Ltd 投影露光装置
JP2006178458A (ja) * 2004-12-21 2006-07-06 Asml Netherlands Bv リソグラフィ投影装置を使用して描像する方法
JP2006295167A (ja) * 2005-04-08 2006-10-26 Asml Netherlands Bv 複数のパターン形成デバイスを利用するリソグラフィ装置及びデバイス製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035516A (ja) 1983-08-08 1985-02-23 Hitachi Ltd 露光方法及び装置
EP1255162A1 (en) * 2001-05-04 2002-11-06 ASML Netherlands B.V. Lithographic apparatus
EP1586946A3 (en) * 2004-04-14 2007-01-17 Carl Zeiss SMT AG Optical system of a microlithographic projection exposure apparatus
EP1619556A1 (en) 2004-07-20 2006-01-25 Interuniversitair Micro-Elektronica Centrum Method and masks for reducing the impact of stray light during optical lithography
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
JP2007019098A (ja) * 2005-07-05 2007-01-25 Elpida Memory Inc 露光装置及び露光方法
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
JP2007281169A (ja) * 2006-04-06 2007-10-25 Nikon Corp 投影光学系、露光装置及び露光方法、並びにデバイス製造方法
DE102008001800A1 (de) * 2007-05-25 2008-11-27 Carl Zeiss Smt Ag Projektionsobjektiv für die Mikrolithographie, Mikrolithographie-Projektionsbelichtungsanlage mit einem derartigen Projektionsobjektiv, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107835A (ja) * 1983-11-17 1985-06-13 Hitachi Ltd 投影露光装置
JP2006178458A (ja) * 2004-12-21 2006-07-06 Asml Netherlands Bv リソグラフィ投影装置を使用して描像する方法
JP2006295167A (ja) * 2005-04-08 2006-10-26 Asml Netherlands Bv 複数のパターン形成デバイスを利用するリソグラフィ装置及びデバイス製造方法

Also Published As

Publication number Publication date
KR20100106351A (ko) 2010-10-01
US20100321657A1 (en) 2010-12-23
JP5480151B2 (ja) 2014-04-23
CN101849210A (zh) 2010-09-29
WO2009061196A1 (en) 2009-05-14
US8570489B2 (en) 2013-10-29
CN101849210B (zh) 2012-11-14
JP2011503870A (ja) 2011-01-27

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