CN101849210B - 光刻投影设备和补偿扰动因素的方法 - Google Patents

光刻投影设备和补偿扰动因素的方法 Download PDF

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Publication number
CN101849210B
CN101849210B CN2008801148367A CN200880114836A CN101849210B CN 101849210 B CN101849210 B CN 101849210B CN 2008801148367 A CN2008801148367 A CN 2008801148367A CN 200880114836 A CN200880114836 A CN 200880114836A CN 101849210 B CN101849210 B CN 101849210B
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CN
China
Prior art keywords
radiation
projection apparatus
lithographic projection
pattern
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2008801148367A
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English (en)
Chinese (zh)
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CN101849210A (zh
Inventor
J·B·P·范斯库特
D·J·马阿斯
A·J·J·范帝杰赛欧东克
H·范德兰
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ASML Netherlands BV
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ASML Netherlands BV
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Publication date
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Publication of CN101849210A publication Critical patent/CN101849210A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2008801148367A 2007-11-08 2008-11-07 光刻投影设备和补偿扰动因素的方法 Expired - Fee Related CN101849210B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US99627707P 2007-11-08 2007-11-08
US60/996,277 2007-11-08
PCT/NL2008/050708 WO2009061196A1 (en) 2007-11-08 2008-11-07 Lithographic projection apparatus and method of compensating perturbation factors

Publications (2)

Publication Number Publication Date
CN101849210A CN101849210A (zh) 2010-09-29
CN101849210B true CN101849210B (zh) 2012-11-14

Family

ID=40269627

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CN2008801148367A Expired - Fee Related CN101849210B (zh) 2007-11-08 2008-11-07 光刻投影设备和补偿扰动因素的方法

Country Status (5)

Country Link
US (1) US8570489B2 (enExample)
JP (1) JP5480151B2 (enExample)
KR (1) KR101509553B1 (enExample)
CN (1) CN101849210B (enExample)
WO (1) WO2009061196A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613526B (zh) * 2015-03-06 2018-02-01 Ａｓｍｌ荷蘭公司 基於重疊製程窗之焦點劑量共同最佳化

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201224678A (en) * 2010-11-04 2012-06-16 Orc Mfg Co Ltd Exposure device
DE102011006189A1 (de) * 2011-03-28 2012-06-06 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Belichten einer lichtempfindlichen Schicht
JP2014229802A (ja) * 2013-05-23 2014-12-08 キヤノン株式会社 リソグラフィ装置、リソグラフィ方法、リソグラフィシステム、及び物品の製造方法
JP6321189B2 (ja) * 2014-01-27 2018-05-09 東京エレクトロン株式会社 パターン化膜の臨界寸法をシフトするシステムおよび方法
WO2017011188A1 (en) * 2015-07-13 2017-01-19 Applied Materials, Inc. Quarter wave light splitting

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1586946A2 (en) * 2004-04-14 2005-10-19 Carl Zeiss SMT AG Optical system of a microlithographic projection exposure apparatus
EP1619556A1 (en) * 2004-07-20 2006-01-25 Interuniversitair Micro-Elektronica Centrum Method and masks for reducing the impact of stray light during optical lithography
CN1740916A (zh) * 2004-08-27 2006-03-01 Asml控股股份有限公司 用以减低浸入式光刻系统中移动所导致的扰动的系统与方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035516A (ja) * 1983-08-08 1985-02-23 Hitachi Ltd 露光方法及び装置
JPS60107835A (ja) 1983-11-17 1985-06-13 Hitachi Ltd 投影露光装置
EP1255162A1 (en) * 2001-05-04 2002-11-06 ASML Netherlands B.V. Lithographic apparatus
US7199863B2 (en) 2004-12-21 2007-04-03 Asml Netherlands B.V. Method of imaging using lithographic projection apparatus
US7209217B2 (en) * 2005-04-08 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing plural patterning devices
JP2007019098A (ja) * 2005-07-05 2007-01-25 Elpida Memory Inc 露光装置及び露光方法
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
JP2007281169A (ja) * 2006-04-06 2007-10-25 Nikon Corp 投影光学系、露光装置及び露光方法、並びにデバイス製造方法
DE102008001800A1 (de) * 2007-05-25 2008-11-27 Carl Zeiss Smt Ag Projektionsobjektiv für die Mikrolithographie, Mikrolithographie-Projektionsbelichtungsanlage mit einem derartigen Projektionsobjektiv, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1586946A2 (en) * 2004-04-14 2005-10-19 Carl Zeiss SMT AG Optical system of a microlithographic projection exposure apparatus
EP1619556A1 (en) * 2004-07-20 2006-01-25 Interuniversitair Micro-Elektronica Centrum Method and masks for reducing the impact of stray light during optical lithography
CN1740916A (zh) * 2004-08-27 2006-03-01 Asml控股股份有限公司 用以减低浸入式光刻系统中移动所导致的扰动的系统与方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP昭60-107835A 1985.06.13
JP昭60-35516A 1985.02.23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI613526B (zh) * 2015-03-06 2018-02-01 Ａｓｍｌ荷蘭公司 基於重疊製程窗之焦點劑量共同最佳化

Also Published As

Publication number Publication date
JP2011503870A (ja) 2011-01-27
CN101849210A (zh) 2010-09-29
US8570489B2 (en) 2013-10-29
KR101509553B1 (ko) 2015-04-06
US20100321657A1 (en) 2010-12-23
WO2009061196A1 (en) 2009-05-14
JP5480151B2 (ja) 2014-04-23
KR20100106351A (ko) 2010-10-01

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