JP5479074B2 - 光学素子の製造方法、光学素子 - Google Patents

光学素子の製造方法、光学素子 Download PDF

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Publication number
JP5479074B2
JP5479074B2 JP2009289010A JP2009289010A JP5479074B2 JP 5479074 B2 JP5479074 B2 JP 5479074B2 JP 2009289010 A JP2009289010 A JP 2009289010A JP 2009289010 A JP2009289010 A JP 2009289010A JP 5479074 B2 JP5479074 B2 JP 5479074B2
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Japan
Prior art keywords
phase shifter
light
optical element
substrate
pattern
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JP2009289010A
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English (en)
Japanese (ja)
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JP2011128504A (ja
JP2011128504A5 (https=
Inventor
一秀 山城
秀喜 須田
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Hoya Corp
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Hoya Corp
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Publication date
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Priority to JP2009289010A priority Critical patent/JP5479074B2/ja
Priority to US12/718,655 priority patent/US8273506B2/en
Priority to TW99111677A priority patent/TWI467320B/zh
Priority to KR1020100037430A priority patent/KR101159959B1/ko
Priority to CN201010167630XA priority patent/CN102103326B/zh
Publication of JP2011128504A publication Critical patent/JP2011128504A/ja
Priority to KR1020120049848A priority patent/KR101297517B1/ko
Publication of JP2011128504A5 publication Critical patent/JP2011128504A5/ja
Application granted granted Critical
Publication of JP5479074B2 publication Critical patent/JP5479074B2/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2009289010A 2009-12-21 2009-12-21 光学素子の製造方法、光学素子 Active JP5479074B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009289010A JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子
US12/718,655 US8273506B2 (en) 2009-12-21 2010-03-05 Method of manufacturing optical element, and optical element
TW99111677A TWI467320B (zh) 2009-12-21 2010-04-14 光學元件之製造方法、光學元件
KR1020100037430A KR101159959B1 (ko) 2009-12-21 2010-04-22 광학 소자의 제조 방법, 광학 소자
CN201010167630XA CN102103326B (zh) 2009-12-21 2010-04-26 光学元件制造方法
KR1020120049848A KR101297517B1 (ko) 2009-12-21 2012-05-10 광학 소자의 제조 방법, 광학 소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009289010A JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014024253A Division JP5719948B2 (ja) 2014-02-12 2014-02-12 光学素子の製造方法

Publications (3)

Publication Number Publication Date
JP2011128504A JP2011128504A (ja) 2011-06-30
JP2011128504A5 JP2011128504A5 (https=) 2012-07-12
JP5479074B2 true JP5479074B2 (ja) 2014-04-23

Family

ID=44151602

Family Applications (1)

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JP2009289010A Active JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子

Country Status (5)

Country Link
US (1) US8273506B2 (https=)
JP (1) JP5479074B2 (https=)
KR (2) KR101159959B1 (https=)
CN (1) CN102103326B (https=)
TW (1) TWI467320B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9007674B2 (en) 2011-09-30 2015-04-14 View, Inc. Defect-mitigation layers in electrochromic devices
US8432603B2 (en) 2009-03-31 2013-04-30 View, Inc. Electrochromic devices
US9958750B2 (en) 2010-11-08 2018-05-01 View, Inc. Electrochromic window fabrication methods
US12496809B2 (en) 2010-11-08 2025-12-16 View Operating Corporation Electrochromic window fabrication methods
US10295880B2 (en) 2011-12-12 2019-05-21 View, Inc. Narrow pre-deposition laser deletion
US11865632B2 (en) 2011-12-12 2024-01-09 View, Inc. Thin-film devices and fabrication
US10802371B2 (en) 2011-12-12 2020-10-13 View, Inc. Thin-film devices and fabrication
WO2016004373A1 (en) * 2014-07-03 2016-01-07 View, Inc. Narrow pre-deposition laser deletion
EP2791733B1 (en) 2011-12-12 2017-10-25 View, Inc. Thin-film devices and fabrication
US12061402B2 (en) 2011-12-12 2024-08-13 View, Inc. Narrow pre-deposition laser deletion
US12403676B2 (en) 2011-12-12 2025-09-02 View Operating Corporation Thin-film devices and fabrication
WO2013122220A1 (ja) * 2012-02-15 2013-08-22 大日本印刷株式会社 位相シフトマスク及び当該位相シフトマスクを用いたレジストパターン形成方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
US12235560B2 (en) 2014-11-25 2025-02-25 View, Inc. Faster switching electrochromic devices
CN107533267A (zh) 2015-03-20 2018-01-02 唯景公司 更快速地切换低缺陷电致变色窗
JP2017072842A (ja) * 2016-11-09 2017-04-13 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
EP4073580A1 (en) 2019-12-10 2022-10-19 View, Inc. Laser methods for processing electrochromic glass
US12078921B2 (en) 2020-11-20 2024-09-03 Entegris, Inc. Phase-shift reticle for use in photolithography
CN113589641B (zh) * 2021-07-20 2024-03-19 华虹半导体(无锡)有限公司 相移掩模的制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100322537B1 (ko) * 1999-07-02 2002-03-25 윤종용 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법
US6569581B2 (en) * 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
JP2003121988A (ja) * 2001-10-12 2003-04-23 Hoya Corp ハーフトーン型位相シフトマスクの欠陥修正方法
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP3727319B2 (ja) 2002-04-30 2005-12-14 松下電器産業株式会社 フォトマスク及びその作成方法
JP2003330159A (ja) 2002-05-09 2003-11-19 Nec Electronics Corp 透過型位相シフトマスク及び該透過型位相シフトマスクを用いたパターン形成方法
JP4443873B2 (ja) 2003-08-15 2010-03-31 Ｈｏｙａ株式会社 位相シフトマスクの製造方法
TWI243280B (en) * 2004-05-19 2005-11-11 Prodisc Technology Inc Optical device manufacturing method
JP4566666B2 (ja) * 2004-09-14 2010-10-20 富士通セミコンダクター株式会社 露光用マスクとその製造方法
JP4823711B2 (ja) * 2006-02-16 2011-11-24 Ｈｏｙａ株式会社 パターン形成方法及び位相シフトマスクの製造方法
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
TW200736821A (en) * 2006-03-16 2007-10-01 Hoya Corp Pattern forming method and method of producing a gray tone mask
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP5254581B2 (ja) * 2007-08-22 2013-08-07 Ｈｏｙａ株式会社 フォトマスク及びフォトマスクの製造方法
KR20090044534A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 노광 마스크, 노광 마스크 제조 방법 및 이를 이용한반도체 소자의 제조 방법

Also Published As

Publication number Publication date
KR101159959B1 (ko) 2012-06-25
KR20110073184A (ko) 2011-06-29
TWI467320B (zh) 2015-01-01
US8273506B2 (en) 2012-09-25
TW201122720A (en) 2011-07-01
JP2011128504A (ja) 2011-06-30
KR20120054584A (ko) 2012-05-30
KR101297517B1 (ko) 2013-08-16
CN102103326B (zh) 2013-01-23
CN102103326A (zh) 2011-06-22
US20110151383A1 (en) 2011-06-23

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