KR101159959B1 - 광학 소자의 제조 방법, 광학 소자 - Google Patents

광학 소자의 제조 방법, 광학 소자 Download PDF

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Publication number
KR101159959B1
KR101159959B1 KR1020100037430A KR20100037430A KR101159959B1 KR 101159959 B1 KR101159959 B1 KR 101159959B1 KR 1020100037430 A KR1020100037430 A KR 1020100037430A KR 20100037430 A KR20100037430 A KR 20100037430A KR 101159959 B1 KR101159959 B1 KR 101159959B1
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South Korea
Prior art keywords
phase shifter
light
substrate
pattern
light shielding
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Korean (ko)
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KR20110073184A (ko
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가즈히데 야마시로
히데끼 스다
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호야 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020100037430A 2009-12-21 2010-04-22 광학 소자의 제조 방법, 광학 소자 Active KR101159959B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-289010 2009-12-21
JP2009289010A JP5479074B2 (ja) 2009-12-21 2009-12-21 光学素子の製造方法、光学素子

Related Child Applications (1)

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KR1020120049848A Division KR101297517B1 (ko) 2009-12-21 2012-05-10 광학 소자의 제조 방법, 광학 소자

Publications (2)

Publication Number Publication Date
KR20110073184A KR20110073184A (ko) 2011-06-29
KR101159959B1 true KR101159959B1 (ko) 2012-06-25

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KR1020100037430A Active KR101159959B1 (ko) 2009-12-21 2010-04-22 광학 소자의 제조 방법, 광학 소자
KR1020120049848A Active KR101297517B1 (ko) 2009-12-21 2012-05-10 광학 소자의 제조 방법, 광학 소자

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KR1020120049848A Active KR101297517B1 (ko) 2009-12-21 2012-05-10 광학 소자의 제조 방법, 광학 소자

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Country Link
US (1) US8273506B2 (https=)
JP (1) JP5479074B2 (https=)
KR (2) KR101159959B1 (https=)
CN (1) CN102103326B (https=)
TW (1) TWI467320B (https=)

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US9007674B2 (en) 2011-09-30 2015-04-14 View, Inc. Defect-mitigation layers in electrochromic devices
US8432603B2 (en) 2009-03-31 2013-04-30 View, Inc. Electrochromic devices
US9958750B2 (en) 2010-11-08 2018-05-01 View, Inc. Electrochromic window fabrication methods
US12496809B2 (en) 2010-11-08 2025-12-16 View Operating Corporation Electrochromic window fabrication methods
US10295880B2 (en) 2011-12-12 2019-05-21 View, Inc. Narrow pre-deposition laser deletion
US11865632B2 (en) 2011-12-12 2024-01-09 View, Inc. Thin-film devices and fabrication
US10802371B2 (en) 2011-12-12 2020-10-13 View, Inc. Thin-film devices and fabrication
WO2016004373A1 (en) * 2014-07-03 2016-01-07 View, Inc. Narrow pre-deposition laser deletion
EP2791733B1 (en) 2011-12-12 2017-10-25 View, Inc. Thin-film devices and fabrication
US12061402B2 (en) 2011-12-12 2024-08-13 View, Inc. Narrow pre-deposition laser deletion
US12403676B2 (en) 2011-12-12 2025-09-02 View Operating Corporation Thin-film devices and fabrication
WO2013122220A1 (ja) * 2012-02-15 2013-08-22 大日本印刷株式会社 位相シフトマスク及び当該位相シフトマスクを用いたレジストパターン形成方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
US12235560B2 (en) 2014-11-25 2025-02-25 View, Inc. Faster switching electrochromic devices
CN107533267A (zh) 2015-03-20 2018-01-02 唯景公司 更快速地切换低缺陷电致变色窗
JP2017072842A (ja) * 2016-11-09 2017-04-13 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
EP4073580A1 (en) 2019-12-10 2022-10-19 View, Inc. Laser methods for processing electrochromic glass
US12078921B2 (en) 2020-11-20 2024-09-03 Entegris, Inc. Phase-shift reticle for use in photolithography
CN113589641B (zh) * 2021-07-20 2024-03-19 华虹半导体(无锡)有限公司 相移掩模的制作方法

Citations (3)

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JP2004029747A (ja) * 2002-04-30 2004-01-29 Matsushita Electric Ind Co Ltd フォトマスク、その作成方法、及びそのフォトマスクを用いたパターン形成方法
JP2005062571A (ja) * 2003-08-15 2005-03-10 Hoya Corp 位相シフトマスクの製造方法
KR20090044534A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 노광 마스크, 노광 마스크 제조 방법 및 이를 이용한반도체 소자의 제조 방법

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KR100322537B1 (ko) * 1999-07-02 2002-03-25 윤종용 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법
US6569581B2 (en) * 2001-03-21 2003-05-27 International Business Machines Corporation Alternating phase shifting masks
JP2003121988A (ja) * 2001-10-12 2003-04-23 Hoya Corp ハーフトーン型位相シフトマスクの欠陥修正方法
US7001694B2 (en) * 2002-04-30 2006-02-21 Matsushita Electric Industrial Co., Ltd. Photomask and method for producing the same
JP2003330159A (ja) 2002-05-09 2003-11-19 Nec Electronics Corp 透過型位相シフトマスク及び該透過型位相シフトマスクを用いたパターン形成方法
TWI243280B (en) * 2004-05-19 2005-11-11 Prodisc Technology Inc Optical device manufacturing method
JP4566666B2 (ja) * 2004-09-14 2010-10-20 富士通セミコンダクター株式会社 露光用マスクとその製造方法
JP4823711B2 (ja) * 2006-02-16 2011-11-24 Ｈｏｙａ株式会社 パターン形成方法及び位相シフトマスクの製造方法
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
TW200736821A (en) * 2006-03-16 2007-10-01 Hoya Corp Pattern forming method and method of producing a gray tone mask
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP5254581B2 (ja) * 2007-08-22 2013-08-07 Ｈｏｙａ株式会社 フォトマスク及びフォトマスクの製造方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2004029747A (ja) * 2002-04-30 2004-01-29 Matsushita Electric Ind Co Ltd フォトマスク、その作成方法、及びそのフォトマスクを用いたパターン形成方法
JP2005062571A (ja) * 2003-08-15 2005-03-10 Hoya Corp 位相シフトマスクの製造方法
KR20090044534A (ko) * 2007-10-31 2009-05-07 주식회사 하이닉스반도체 노광 마스크, 노광 마스크 제조 방법 및 이를 이용한반도체 소자의 제조 방법

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Publication number Publication date
JP5479074B2 (ja) 2014-04-23
KR20110073184A (ko) 2011-06-29
TWI467320B (zh) 2015-01-01
US8273506B2 (en) 2012-09-25
TW201122720A (en) 2011-07-01
JP2011128504A (ja) 2011-06-30
KR20120054584A (ko) 2012-05-30
KR101297517B1 (ko) 2013-08-16
CN102103326B (zh) 2013-01-23
CN102103326A (zh) 2011-06-22
US20110151383A1 (en) 2011-06-23

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