JP5478469B2 - 過熱水蒸気供給装置及び基板処理装置 - Google Patents
過熱水蒸気供給装置及び基板処理装置 Download PDFInfo
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- JP5478469B2 JP5478469B2 JP2010265478A JP2010265478A JP5478469B2 JP 5478469 B2 JP5478469 B2 JP 5478469B2 JP 2010265478 A JP2010265478 A JP 2010265478A JP 2010265478 A JP2010265478 A JP 2010265478A JP 5478469 B2 JP5478469 B2 JP 5478469B2
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- water vapor
- superheated steam
- pure water
- water
- substrate processing
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- 239000000758 substrate Substances 0.000 title claims description 66
- 238000012545 processing Methods 0.000 title claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 111
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 229910052736 halogen Inorganic materials 0.000 claims description 10
- 150000002367 halogens Chemical class 0.000 claims description 10
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 238000009835 boiling Methods 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229920006395 saturated elastomer Polymers 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- -1 etc. Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000008236 heating water Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
Claims (6)
- 純水流通路を通流する純水を、前記純水流通路から隔離した位置に設けたハロゲンランプの照射により加熱沸騰させて水蒸気を発生させる石英ガラス製の水蒸気発生容器と、
前記水蒸気発生容器に純水を供給する純水供給部と、
前記水蒸気発生容器で発生した水蒸気を、水蒸気が通流する水蒸気流通路から隔離した位置に設けた赤外線ヒータからの照射により加熱して110〜1000℃の過熱水蒸気を生成する石英ガラス製の過熱水蒸気生成容器とを備えていることを特徴とする過熱水蒸気供給装置。 - 純水流通路を通流する純水を、前記純水流通路から隔離した位置に設けたハロゲンランプの照射により加熱沸騰させて水蒸気を発生させる石英ガラス製の水蒸気発生容器と、
前記水蒸気発生容器に純水を供給する純水供給部と、
前記水蒸気発生容器で発生した水蒸気を、水蒸気が通流する水蒸気流通路から隔離した位置に設けた赤外線ヒータからの照射により加熱して110〜1000℃の過熱水蒸気を生成する石英ガラス製の過熱水蒸気生成容器と、
この過熱水蒸気生成容器で発生した過熱水蒸気を被処理基板の表面に噴射させる基板処理機構とを備えていることを特徴とする基板処理装置。 - 前記過熱水蒸気生成容器に窒素ガスを供給する窒素ガス供給部をさらに備えていることを特徴とする請求項2に記載の基板処理装置。
- 前記基板処理機構は、基板表面が100℃を超える温度に維持されるヒータを備えていることを特徴とする請求項2記載の基板処理装置。
- 前記水蒸気発生容器に薬液を供給する薬液供給部をさらに備えていることを特徴とする請求項2記載の基板処理装置。
- 前記薬液は、フッ酸、塩酸、過酸化水素水、硫酸、オゾン水、アンモニア水、フッ素系有機溶剤、電解イオン水等から選択された少なくとも1種類以上の薬液を含むことを特徴とする請求項5記載の基板処理装置。
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JP5782606B2 (ja) * | 2011-07-05 | 2015-09-24 | 株式会社Gushout | 加熱装置、ガラスシステム、処理装置およびプログラム |
JP6201096B2 (ja) * | 2014-05-22 | 2017-09-27 | 株式会社Gushout | 加熱装置および耕耘装置 |
KR102428347B1 (ko) * | 2017-11-15 | 2022-08-02 | 삼성디스플레이 주식회사 | 스팀 세정 장치 및 스팀 세정 방법 |
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JPH0220273A (ja) * | 1988-07-08 | 1990-01-23 | Kyozo Tomita | 冷凍食品の解凍調理方法及び装置 |
JPH05337054A (ja) * | 1992-06-10 | 1993-12-21 | Sharp Corp | 温蔵庫 |
JP2000091193A (ja) * | 1998-09-09 | 2000-03-31 | Seiko Epson Corp | 表面処理方法及び装置 |
IT246360Y1 (it) * | 1998-11-25 | 2002-04-08 | Andrea Gerosa | Dispositivo per produrre istantaneamente vapore |
US6630031B1 (en) * | 1999-08-12 | 2003-10-07 | Sipec Corporation | Surface purification apparatus and surface purification method |
JP3808725B2 (ja) * | 2001-05-30 | 2006-08-16 | 大日本スクリーン製造株式会社 | 基板洗浄装置 |
JP4227637B2 (ja) * | 2006-09-19 | 2009-02-18 | 達實 小野 | 過熱蒸気生成噴射装置及び過熱蒸気を熱源とする熱処理装置 |
JP4705937B2 (ja) * | 2007-08-01 | 2011-06-22 | オメガセミコン電子株式会社 | ベーパー乾燥装置 |
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