JP5473921B2 - スルホニウム塩開始剤 - Google Patents

スルホニウム塩開始剤 Download PDF

Info

Publication number
JP5473921B2
JP5473921B2 JP2010528357A JP2010528357A JP5473921B2 JP 5473921 B2 JP5473921 B2 JP 5473921B2 JP 2010528357 A JP2010528357 A JP 2010528357A JP 2010528357 A JP2010528357 A JP 2010528357A JP 5473921 B2 JP5473921 B2 JP 5473921B2
Authority
JP
Japan
Prior art keywords
acid
substituted
group
interrupted
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010528357A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011500525A5 (enExample
JP2011500525A (ja
Inventor
アヨ パスカル
斉 山戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of JP2011500525A publication Critical patent/JP2011500525A/ja
Publication of JP2011500525A5 publication Critical patent/JP2011500525A5/ja
Application granted granted Critical
Publication of JP5473921B2 publication Critical patent/JP5473921B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C321/00—Thiols, sulfides, hydropolysulfides or polysulfides
    • C07C321/24—Thiols, sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
    • C07C321/28—Sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/10—Printing inks based on artificial resins
    • C09D11/101—Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/03—Powdery paints
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y10S430/123—Sulfur in heterocyclic ring

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Paints Or Removers (AREA)
  • Polymerisation Methods In General (AREA)
  • Furan Compounds (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Materials For Photolithography (AREA)
JP2010528357A 2007-10-10 2008-09-29 スルホニウム塩開始剤 Active JP5473921B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP07118195 2007-10-10
EP07118195.2 2007-10-10
PCT/EP2008/062988 WO2009047151A1 (en) 2007-10-10 2008-09-29 Sulphonium salt initiators

Publications (3)

Publication Number Publication Date
JP2011500525A JP2011500525A (ja) 2011-01-06
JP2011500525A5 JP2011500525A5 (enExample) 2014-01-23
JP5473921B2 true JP5473921B2 (ja) 2014-04-16

Family

ID=39473146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010528357A Active JP5473921B2 (ja) 2007-10-10 2008-09-29 スルホニウム塩開始剤

Country Status (7)

Country Link
US (1) US8512934B2 (enExample)
EP (1) EP2197840B1 (enExample)
JP (1) JP5473921B2 (enExample)
KR (1) KR101571911B1 (enExample)
CN (1) CN101952248B (enExample)
TW (1) TWI439446B (enExample)
WO (1) WO2009047151A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8067643B2 (en) * 2006-04-13 2011-11-29 Basf Se Sulphonium salt initiators
KR20110025211A (ko) * 2008-06-12 2011-03-09 바스프 에스이 술포늄 유도체 및 잠재성 산으로서의 그의 용도
EP2349993B1 (en) 2008-10-20 2012-12-12 Basf Se Sulfonium derivatives and the use therof as latent acids
JP5387181B2 (ja) * 2009-07-08 2014-01-15 信越化学工業株式会社 スルホニウム塩、レジスト材料及びパターン形成方法
KR101821426B1 (ko) * 2009-12-17 2018-01-23 디에스엠 아이피 어셋츠 비.브이. 기판-기재 적층식 제작 공정
CN102725689B (zh) 2010-01-22 2014-10-08 帝斯曼知识产权资产管理有限公司 能固化成具有选择性视觉效果的层的液体可辐射固化树脂及其使用方法
JP5749631B2 (ja) * 2010-12-07 2015-07-15 東京応化工業株式会社 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法
US8816211B2 (en) * 2011-02-14 2014-08-26 Eastman Kodak Company Articles with photocurable and photocured compositions
EP2502728B1 (en) 2011-03-23 2017-01-04 DSM IP Assets B.V. Lightweight and high strength three-dimensional articles producible by additive fabrication processes
CN102608866A (zh) * 2012-02-15 2012-07-25 潍坊星泰克微电子材料有限公司 一种丙烯酸正性光刻胶及其制备方法
JP5673784B2 (ja) * 2013-02-21 2015-02-18 Jsr株式会社 感光性組成物、硬化膜およびその製造方法ならびに電子部品
KR102066311B1 (ko) * 2015-10-30 2020-01-14 주식회사 엘지화학 접착제 조성물, 이를 이용하여 형성된 접착제층을 포함하는 편광판
JP6583136B2 (ja) * 2016-05-11 2019-10-02 信越化学工業株式会社 新規スルホニウム化合物及びその製造方法、レジスト組成物、並びにパターン形成方法
CN107698477B (zh) 2016-08-08 2020-05-12 常州强力电子新材料股份有限公司 一种新型阳离子型光引发剂及其制备方法和应用
CN109843853B (zh) 2016-10-17 2022-09-20 东洋合成工业株式会社 组合物和使用该组合物的设备的制造方法
US10520813B2 (en) * 2016-12-15 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd Extreme ultraviolet photoresist with high-efficiency electron transfer
CN109134710B (zh) * 2017-06-15 2021-08-03 常州强力电子新材料股份有限公司 一种芳基硫鎓盐肟酯类光引发剂及其合成与应用
CN109134711B (zh) * 2017-06-15 2021-08-03 常州强力电子新材料股份有限公司 一种硫鎓盐光引发剂及其制备与应用
CN109135392B (zh) * 2017-06-15 2021-11-02 常州强力电子新材料股份有限公司 一种双硫鎓盐光引发剂
WO2019014352A1 (en) 2017-07-11 2019-01-17 Vertex Pharmaceuticals Incorporated CARBOXAMIDES AS INHIBITORS OF SODIUM CHANNELS
EP3665232A4 (en) 2017-08-10 2021-04-07 Sun Chemical Corporation UV CURABLE COMPOSITIONS CONTAINING ACYLPHOSPHINE OXIDE PHOTOINITIATORS
CN109456242B (zh) * 2017-09-06 2021-02-12 常州强力电子新材料股份有限公司 硫鎓盐光引发剂、其制备方法、包含其的光固化组合物及其应用
US11281099B2 (en) * 2018-05-28 2022-03-22 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound
US12228858B2 (en) * 2018-10-31 2025-02-18 Dupont Specialty Materials Korea Ltd Coating composition for forming resist underlayer film for EUV lithography process
KR20200052090A (ko) * 2018-11-06 2020-05-14 롬엔드하스전자재료코리아유한회사 포지티브형 감광성 수지 조성물 및 이로부터 제조된 경화막
US12440481B2 (en) 2019-01-10 2025-10-14 Vertex Pharmaceuticals Incorporated Esters and carbamates as modulators of sodium channels
WO2020146682A1 (en) 2019-01-10 2020-07-16 Vertex Pharmaceuticals Incorporated Carboxamides as modulators of sodium channels
CN114502662A (zh) 2019-10-03 2022-05-13 3M创新有限公司 采用自由基介导固化的有机硅弹性体
CN110922346A (zh) * 2019-11-12 2020-03-27 上海鑫响实业有限公司 一种三(4-乙酰联苯硫醚)硫醚鎓六氟磷酸盐及其合成方法
US20230311473A1 (en) * 2022-04-01 2023-10-05 Dupont Electronics, Inc. Printing form precursor and printing form thereof

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA805273B (en) 1979-09-28 1981-11-25 Gen Electric Process of deep section curing photocurable compositions
US4304941A (en) 1980-08-01 1981-12-08 Hoechst Roussel Pharmaceuticals, Inc. Method of preparing poly-substituted acylbenzenes
US4451409A (en) * 1982-02-08 1984-05-29 The Dow Chemical Company Sulfonium organosulfonates
US4694029A (en) * 1985-04-09 1987-09-15 Cook Paint And Varnish Company Hybrid photocure system
US5220037A (en) * 1989-07-22 1993-06-15 Basf Aktiengesellschaft Sulfonium salts and use thereof
DE3924299A1 (de) * 1989-07-22 1991-01-31 Basf Ag Neue sulfoniumsalze und deren verwendung
US5254760A (en) 1992-07-29 1993-10-19 Ciba-Geigy Corporation Inhibiting polymerization of vinyl aromatic monomers
US6025406A (en) 1997-04-11 2000-02-15 3M Innovative Properties Company Ternary photoinitiator system for curing of epoxy resins
JP4204113B2 (ja) * 1997-12-04 2009-01-07 株式会社Ａｄｅｋａ 新規な芳香族スルホニウム化合物、これからなる光酸発生剤およびこれを含む光重合性組成物、光造形用樹脂組成物ならびに光学的立体造形法
US5973020A (en) 1998-01-06 1999-10-26 Rhodia Inc. Photoinitiator composition including hindered amine stabilizer
US6337426B1 (en) 1998-11-23 2002-01-08 Nalco/Exxon Energy Chemicals, L.P. Antifoulant compositions and processes
US6444733B1 (en) 1999-03-01 2002-09-03 Ciba Specialty Chemicals Corporation Stabilizer combination for the rotomolding process
JP2001228612A (ja) 2000-02-15 2001-08-24 Jsr Corp 感放射線性樹脂組成物
JP2001235863A (ja) 2000-02-22 2001-08-31 Jsr Corp 感放射線性樹脂組成物
JP4475372B2 (ja) 2000-03-22 2010-06-09 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
EP1143300A1 (en) 2000-04-03 2001-10-10 Shipley Company LLC Photoresist compositions and use of same
JP2001290274A (ja) 2000-04-07 2001-10-19 Jsr Corp 感放射線性樹脂組成物
JP2002072477A (ja) 2000-06-12 2002-03-12 Jsr Corp 感放射線性樹脂組成物
JP2002030118A (ja) 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
JP2002030116A (ja) 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
JP2002082437A (ja) 2000-09-06 2002-03-22 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US6468595B1 (en) 2001-02-13 2002-10-22 Sigma Technologies International, Inc. Vaccum deposition of cationic polymer systems
JP3915895B2 (ja) 2001-03-01 2007-05-16 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
JP4534371B2 (ja) 2001-03-16 2010-09-01 Ｊｓｒ株式会社 感放射線性樹脂組成物
KR20030076225A (ko) 2001-04-04 2003-09-26 아치 스페셜티 케미칼즈, 인코포레이티드 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물
CA2452566C (en) 2001-07-19 2011-08-23 Lamberti Spa Sulfonium salts, methods for their preparation and use thereof as photoinitiators for radiation curable systems
JP4281305B2 (ja) 2001-07-31 2009-06-17 住友化学株式会社 ３層レジスト中間層用樹脂組成物
JP2003066626A (ja) 2001-08-30 2003-03-05 Fuji Photo Film Co Ltd ポジ型感光性組成物及びサーマルフローパターン形成方法
US20030064321A1 (en) 2001-08-31 2003-04-03 Arch Specialty Chemicals, Inc. Free-acid containing polymers and their use in photoresists
JP4221988B2 (ja) 2001-09-27 2009-02-12 住友化学株式会社 ３層レジスト中間層用樹脂組成物
JP3476082B2 (ja) 2001-11-05 2003-12-10 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP4057807B2 (ja) 2001-12-03 2008-03-05 東京応化工業株式会社 微細レジストパターン形成方法
JP2003207896A (ja) 2002-01-16 2003-07-25 Fuji Photo Film Co Ltd ポジ型レジスト組成物
GB0204467D0 (en) 2002-02-26 2002-04-10 Coates Brothers Plc Novel fused ring compounds, and their use as cationic photoinitiators
JP3813890B2 (ja) 2002-03-22 2006-08-23 富士写真フイルム株式会社 ３層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法
TW200401841A (en) 2002-05-29 2004-02-01 Watanabe M & Co Ltd Vaporizer, various apparatus including the same and method of vaporization
GB0213724D0 (en) 2002-06-14 2002-07-24 Turner Christopher G G Electronic identification system
WO2004029037A1 (ja) 2002-09-25 2004-04-08 Asahi Denka Co.Ltd. 新規な芳香族スルホニウム塩化合物、これからなる光酸発生剤およびこれを含む光重合性組成物、光学的立体造形用樹脂組成物並びに光学的立体造形法
JP3841742B2 (ja) 2002-11-14 2006-11-01 東京応化工業株式会社 ポジ型レジスト組成物、それを用いた多層レジスト材料及びレジストパターン形成方法
BRPI0513709A (pt) 2004-07-21 2008-05-13 Ciba Sc Holding Ag processo para a fotoativação e uso de um catalisador por um procedimento de dois estágios invertido
DE102004044085A1 (de) 2004-09-09 2006-03-16 Tesa Ag Haftklebemasse mit dualem Vernetzungsmechanismus
JP4696009B2 (ja) * 2005-03-22 2011-06-08 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
ATE473209T1 (de) * 2005-07-01 2010-07-15 Basf Se Sulfoniumsalzinitiatoren
JP2007238828A (ja) * 2006-03-10 2007-09-20 Cmet Inc 光学的立体造形用樹脂組成物
US8067643B2 (en) * 2006-04-13 2011-11-29 Basf Se Sulphonium salt initiators
JP5290183B2 (ja) 2006-10-04 2013-09-18 チバ ホールディング インコーポレーテッド スルホニウム塩光開始剤
ES2603838T3 (es) 2006-10-24 2017-03-01 Basf Se Composiciones fotocurables catiónicas térmicamente estables
JP5538229B2 (ja) * 2007-10-10 2014-07-02 ビーエーエスエフ ソシエタス・ヨーロピア スルホニウム塩開始剤
CN101952269B (zh) * 2007-10-10 2014-06-25 巴斯夫欧洲公司 锍盐引发剂

Also Published As

Publication number Publication date
EP2197840A1 (en) 2010-06-23
CN101952248B (zh) 2014-04-16
KR20100074261A (ko) 2010-07-01
WO2009047151A1 (en) 2009-04-16
US8512934B2 (en) 2013-08-20
CN101952248A (zh) 2011-01-19
TW200925144A (en) 2009-06-16
JP2011500525A (ja) 2011-01-06
KR101571911B1 (ko) 2015-11-25
US20100297542A1 (en) 2010-11-25
TWI439446B (zh) 2014-06-01
EP2197840B1 (en) 2013-11-06

Similar Documents

Publication Publication Date Title
JP5473921B2 (ja) スルホニウム塩開始剤
JP5570424B2 (ja) スルホニウム塩開始剤
JP5538229B2 (ja) スルホニウム塩開始剤
JP5721630B2 (ja) スルホニウム誘導体および潜在酸としてのその使用
KR101334046B1 (ko) 설포늄염 개시제
KR100753350B1 (ko) 요오도늄 염 및 광개시제로서의 이의 용도

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110926

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110926

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130829

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A132

Effective date: 20130902

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20131129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131202

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140204

R150 Certificate of patent or registration of utility model

Ref document number: 5473921

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250