JP5473398B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

Info

Publication number
JP5473398B2
JP5473398B2 JP2009117381A JP2009117381A JP5473398B2 JP 5473398 B2 JP5473398 B2 JP 5473398B2 JP 2009117381 A JP2009117381 A JP 2009117381A JP 2009117381 A JP2009117381 A JP 2009117381A JP 5473398 B2 JP5473398 B2 JP 5473398B2
Authority
JP
Japan
Prior art keywords
region
type
ion implantation
conductivity type
drift layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009117381A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010267767A (ja
JP2010267767A5 (https=
Inventor
健一 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2009117381A priority Critical patent/JP5473398B2/ja
Publication of JP2010267767A publication Critical patent/JP2010267767A/ja
Publication of JP2010267767A5 publication Critical patent/JP2010267767A5/ja
Application granted granted Critical
Publication of JP5473398B2 publication Critical patent/JP5473398B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009117381A 2009-05-14 2009-05-14 半導体装置およびその製造方法 Active JP5473398B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009117381A JP5473398B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009117381A JP5473398B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2010267767A JP2010267767A (ja) 2010-11-25
JP2010267767A5 JP2010267767A5 (https=) 2011-12-22
JP5473398B2 true JP5473398B2 (ja) 2014-04-16

Family

ID=43364503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009117381A Active JP5473398B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP5473398B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102668049B (zh) * 2010-12-22 2015-11-25 住友电气工业株式会社 制造碳化硅半导体器件的方法
JP5683436B2 (ja) * 2011-11-11 2015-03-11 三菱電機株式会社 半導体装置の製造方法
JP5669712B2 (ja) * 2011-11-11 2015-02-12 三菱電機株式会社 半導体装置の製造方法
JP5875334B2 (ja) * 2011-11-11 2016-03-02 株式会社日立製作所 炭化珪素半導体装置
WO2013140473A1 (ja) 2012-03-23 2013-09-26 パナソニック株式会社 半導体素子
WO2016002058A1 (ja) * 2014-07-03 2016-01-07 株式会社日立製作所 半導体装置およびその製造方法、パワーモジュール、並びに電力変換装置
JP2024024171A (ja) * 2022-08-09 2024-02-22 新電元工業株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01287966A (ja) * 1987-12-29 1989-11-20 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
JPH10242164A (ja) * 1997-02-24 1998-09-11 Sanyo Electric Co Ltd 縦型パワー半導体装置の製造方法
JP3460585B2 (ja) * 1998-07-07 2003-10-27 富士電機株式会社 炭化けい素ｍｏｓ半導体素子の製造方法
JP3959856B2 (ja) * 1998-07-31 2007-08-15 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2000058869A (ja) * 1998-08-13 2000-02-25 Toshiba Corp 半導体装置
JP2007019146A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 半導体素子
JP2009302436A (ja) * 2008-06-17 2009-12-24 Denso Corp 炭化珪素半導体装置の製造方法
JP5405089B2 (ja) * 2008-11-20 2014-02-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2010267767A (ja) 2010-11-25

Similar Documents

Publication Publication Date Title
JP7182594B2 (ja) ゲート・トレンチと、埋め込まれた終端構造とを有するパワー半導体デバイス、及び、関連方法
JP7190144B2 (ja) 超接合炭化珪素半導体装置および超接合炭化珪素半導体装置の製造方法
JP6400778B2 (ja) 絶縁ゲート型炭化珪素半導体装置及びその製造方法
JP6475635B2 (ja) ゲート酸化膜層において電界を低下させた半導体デバイス
JP5473397B2 (ja) 半導体装置およびその製造方法
CN101055894B (zh) 半导体装置及其制造方法
JP5236279B2 (ja) 電流抑制層を備える絶縁ゲート・バイポーラ・トランジスタ
JP5034315B2 (ja) 半導体装置及びその製造方法
CN105474402B (zh) 碳化硅半导体器件及其制造方法
JP5790573B2 (ja) 炭化珪素半導体装置およびその製造方法
CN107251198B (zh) 绝缘栅功率半导体装置以及用于制造这种装置的方法
JP5473398B2 (ja) 半導体装置およびその製造方法
CN103378142A (zh) 功率器件及其制造方法
JP6802454B2 (ja) 半導体装置およびその製造方法
WO2012137659A1 (ja) 半導体装置およびその製造方法
JPWO2013161116A1 (ja) 半導体装置及びその製造方法
JP2017092355A (ja) 半導体装置および半導体装置の製造方法
JP2011253929A (ja) 半導体装置の製造方法および半導体装置
JPWO2017094339A1 (ja) 炭化珪素半導体装置
JP2008270681A (ja) 炭化珪素半導体装置
US9048210B2 (en) Transistors and methods of manufacturing the same
JP2015099845A (ja) 半導体装置
KR20130119873A (ko) 파워 소자 및 그 제조방법
JP2021150405A (ja) 炭化珪素半導体装置
CN119050155A (zh) 一种SiC器件及其制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111109

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130808

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130820

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131016

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140204

R150 Certificate of patent or registration of utility model

Ref document number: 5473398

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250