JP5473398B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP5473398B2
JP5473398B2 JP2009117381A JP2009117381A JP5473398B2 JP 5473398 B2 JP5473398 B2 JP 5473398B2 JP 2009117381 A JP2009117381 A JP 2009117381A JP 2009117381 A JP2009117381 A JP 2009117381A JP 5473398 B2 JP5473398 B2 JP 5473398B2
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Japan
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region
type
ion implantation
conductivity type
drift layer
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JP2009117381A
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Japanese (ja)
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JP2010267767A (ja
JP2010267767A5 (enrdf_load_stackoverflow
Inventor
健一 大塚
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2009117381A priority Critical patent/JP5473398B2/ja
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Publication of JP2010267767A5 publication Critical patent/JP2010267767A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/047—Making n or p doped regions or layers, e.g. using diffusion using ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009117381A 2009-05-14 2009-05-14 半導体装置およびその製造方法 Active JP5473398B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009117381A JP5473398B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009117381A JP5473398B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Publications (3)

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JP2010267767A JP2010267767A (ja) 2010-11-25
JP2010267767A5 JP2010267767A5 (enrdf_load_stackoverflow) 2011-12-22
JP5473398B2 true JP5473398B2 (ja) 2014-04-16

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Family Applications (1)

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JP2009117381A Active JP5473398B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

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JP (1) JP5473398B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2780359A1 (en) 2010-12-22 2012-06-22 Sumitomo Electric Industries, Ltd. Method of manufacturing silicon carbide semiconductor device
JP5683436B2 (ja) * 2011-11-11 2015-03-11 三菱電機株式会社 半導体装置の製造方法
JP5875334B2 (ja) * 2011-11-11 2016-03-02 株式会社日立製作所 炭化珪素半導体装置
JP5669712B2 (ja) * 2011-11-11 2015-02-12 三菱電機株式会社 半導体装置の製造方法
US8933466B2 (en) 2012-03-23 2015-01-13 Panasonic Corporation Semiconductor element
WO2016002058A1 (ja) * 2014-07-03 2016-01-07 株式会社日立製作所 半導体装置およびその製造方法、パワーモジュール、並びに電力変換装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01287966A (ja) * 1987-12-29 1989-11-20 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
JPH10242164A (ja) * 1997-02-24 1998-09-11 Sanyo Electric Co Ltd 縦型パワー半導体装置の製造方法
JP3460585B2 (ja) * 1998-07-07 2003-10-27 富士電機株式会社 炭化けい素ｍｏｓ半導体素子の製造方法
JP3959856B2 (ja) * 1998-07-31 2007-08-15 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2000058869A (ja) * 1998-08-13 2000-02-25 Toshiba Corp 半導体装置
JP2007019146A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 半導体素子
JP2009302436A (ja) * 2008-06-17 2009-12-24 Denso Corp 炭化珪素半導体装置の製造方法
JP5405089B2 (ja) * 2008-11-20 2014-02-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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JP2010267767A (ja) 2010-11-25

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