JP5462524B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5462524B2
JP5462524B2 JP2009116316A JP2009116316A JP5462524B2 JP 5462524 B2 JP5462524 B2 JP 5462524B2 JP 2009116316 A JP2009116316 A JP 2009116316A JP 2009116316 A JP2009116316 A JP 2009116316A JP 5462524 B2 JP5462524 B2 JP 5462524B2
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JP
Japan
Prior art keywords
electrode
layer
semiconductor device
via hole
silicide
Prior art date
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Expired - Fee Related
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JP2009116316A
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English (en)
Japanese (ja)
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JP2010267695A (ja
JP2010267695A5 (enExample
Inventor
太志郎 斉藤
隆行 甲斐
崇文 大熊
斉 山西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2009116316A priority Critical patent/JP5462524B2/ja
Publication of JP2010267695A publication Critical patent/JP2010267695A/ja
Publication of JP2010267695A5 publication Critical patent/JP2010267695A5/ja
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Publication of JP5462524B2 publication Critical patent/JP5462524B2/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009116316A 2009-05-13 2009-05-13 半導体装置 Expired - Fee Related JP5462524B2 (ja)

Priority Applications (1)

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JP2009116316A JP5462524B2 (ja) 2009-05-13 2009-05-13 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009116316A JP5462524B2 (ja) 2009-05-13 2009-05-13 半導体装置

Publications (3)

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JP2010267695A JP2010267695A (ja) 2010-11-25
JP2010267695A5 JP2010267695A5 (enExample) 2012-04-12
JP5462524B2 true JP5462524B2 (ja) 2014-04-02

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JP2009116316A Expired - Fee Related JP5462524B2 (ja) 2009-05-13 2009-05-13 半導体装置

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JP (1) JP5462524B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5810693B2 (ja) * 2011-07-08 2015-11-11 富士通株式会社 電子デバイス及びその製造方法
JP2014011438A (ja) 2012-07-03 2014-01-20 Toshiba Corp 半導体装置およびその製造方法
JP5917321B2 (ja) * 2012-07-12 2016-05-11 株式会社東芝 半導体装置及びその製造方法
JP6468071B2 (ja) * 2015-05-25 2019-02-13 富士通株式会社 半導体装置及び電子装置並びに半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005109347A (ja) * 2003-10-01 2005-04-21 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP2005276877A (ja) * 2004-03-23 2005-10-06 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP4373866B2 (ja) * 2004-07-16 2009-11-25 三洋電機株式会社 半導体装置の製造方法

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JP2010267695A (ja) 2010-11-25

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