JP5460665B2 - 発光ダイオードパッケージ - Google Patents
発光ダイオードパッケージ Download PDFInfo
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- JP5460665B2 JP5460665B2 JP2011197324A JP2011197324A JP5460665B2 JP 5460665 B2 JP5460665 B2 JP 5460665B2 JP 2011197324 A JP2011197324 A JP 2011197324A JP 2011197324 A JP2011197324 A JP 2011197324A JP 5460665 B2 JP5460665 B2 JP 5460665B2
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- carbonate
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- 239000000463 material Substances 0.000 claims description 49
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 20
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 18
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims description 10
- 229910052808 lithium carbonate Inorganic materials 0.000 claims description 10
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 10
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 9
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims description 9
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 claims description 9
- 239000001095 magnesium carbonate Substances 0.000 claims description 9
- 229910000021 magnesium carbonate Inorganic materials 0.000 claims description 9
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 9
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011149 active material Substances 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 239000013543 active substance Substances 0.000 claims 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 10
- 238000000605 extraction Methods 0.000 description 9
- 229910052582 BN Inorganic materials 0.000 description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 239000012190 activator Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0033—Means for improving the coupling-out of light from the light guide
- G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
- G02B6/0051—Diffusing sheet or layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Planar Illumination Modules (AREA)
- Led Device Packages (AREA)
Description
そこで、この発明の目的は、高い光抽出効率を有する発光ダイオード(light emitting diode = LED)パッケージを提供することにある。
この発明は、散光体として複屈折材料(例えば、炭酸バリウム、炭酸ストロンチウム、炭酸リチウム、炭酸ナトリウム、炭酸カリウム、炭酸マグネシウムなど)あるいは窒化物(例えば、窒化ホウ素)を採用している。散光体がマルチチップパッケージに適用される時、光混合効果が有効に向上される。従って、従来技術と比較して、この発明のLEDパッケージは、より良好な光学特性を備えている。また、この発明のダイレクト型バックライトモジュールおよびエッジ型バックライトモジュールは、より均一な平面光源を提供することができる。
図1は、この発明の実施形態にかかる発光ダイオード(light emitting diode = LED)パッケージを示す要部断面図である。図1において、LEDパッケージ100は、キャリア110と、LEDチップ120と、散光材料130とを含む。この実施形態中、キャリア110は、回路板である。しかし、この発明の別な実施形態では、キャリア110は、リードフレームである。LEDチップ120は、波長λ1の光を放射するのに適したものである。LEDチップ120がキャリア110上に配置されるとともに、キャリア110に電気接続されている。この実施形態中、LEDチップ120は、例えば、複数のボンディングワイヤ140を介して電気接続される。散光材料130は、LEDチップ120上に配置される。散光材料130は、光を散乱させるのに適した複数の散光体(scatters)132を含む。注意すべきことは、散光体132の材料が複屈折(birefringent)材料(例えば、炭酸バリウム、炭酸ストロンチウム、炭酸リチウム、炭酸ナトリウム、炭酸カリウム、炭酸マグネシウムなど)あるいは窒化物(例えば、窒化ホウ素)ということである。
110 キャリア
120 発光ダイオード(LED)チップ
130 散光材料
132 散光体
134 波長変換活性体
140 ボンディングワイヤ
200 ダイレクト型バックライトモジュール
210 ライトボックス
220 光源
230 拡散プレート
232 散光体
300 エッジ型バックライトモジュール
310 フレーム
320 導光板
322 光入射表面
324 光放射表面
330 光源
340 拡散プレート
342 散光体
Claims (5)
- 発光ダイオード(light emitting diode = LED)パッケージであって:
回路板であるキャリアと;
前記キャリアの凹部内に配置されるとともに、前記キャリアに電気接続されるLEDチップであり、そのうち、前記LEDチップが波長λ1の光を放射するのに適したもの(LEDチップ)と;
前記キャリアの上に配置される散光材料であり、前記散光材料が波長λ1の光を分散するために複数の散光体および波長λ1の光によって活性化されるとともに、波長λ2の光を放射する複数の波長変換活性体を含み、そのうち、前記散光体の材料が炭酸リチウム、炭酸ナトリウム、または炭酸カリウムであるもの(散光材料)と、前記波長変換活性体の材料が燐光体および染料からなるグループより選ばれるものと
を含み、
前記LEDチップが、前記キャリア上に配置される前記散光材料の略中心位置に配置されるLEDパッケージ。 - 前記散光体の材料が、炭酸バリウム、炭酸ストロンチウム、又は炭酸マグネシウムを含む請求項1記載のLEDパッケージ。
- 発光ダイオード(light emitting diode = LED)パッケージであって:
回路板であるキャリアと;
前記キャリアの凹部内に配置されるとともに、前記キャリアに電気接続されるLEDチップであり、そのうち、前記LEDチップが波長λ1の光を放射するのに適したもの(LEDチップ)と;
前記キャリアの上に配置される散光材料であり、前記散光材料が波長λ1の光を分散するために複数の散光体を含み、そのうち、前記散光体の材料が炭酸リチウム、炭酸ナトリウム、または炭酸カリウムであるもの(散光材料)と
を含み、
前記LEDチップが、前記キャリア上に配置される前記散光材料の略中心位置に配置されるLEDパッケージ。 - 前記散光材料が、更に、波長λ1の光によって活性化されるとともに、波長λ2の光を放射する複数の波長変換活性体を含むものである請求項3記載のLEDパッケージ。
- 前記波長変換活性体が、蛍光材料、燐光体および染料からなるグループより選ばれるものである請求項4記載のLEDパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096128414 | 2007-08-02 | ||
TW096128414A TWI342628B (en) | 2007-08-02 | 2007-08-02 | Light emitting diode package, direct type back light module and side type backlight module |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007316339A Division JP4846700B2 (ja) | 2007-08-02 | 2007-12-06 | ダイレクト型バックライトモジュールおよびエッジ型バックライトモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011249855A JP2011249855A (ja) | 2011-12-08 |
JP5460665B2 true JP5460665B2 (ja) | 2014-04-02 |
Family
ID=40337937
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2007316339A Active JP4846700B2 (ja) | 2007-08-02 | 2007-12-06 | ダイレクト型バックライトモジュールおよびエッジ型バックライトモジュール |
JP2011197324A Active JP5460665B2 (ja) | 2007-08-02 | 2011-09-09 | 発光ダイオードパッケージ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007316339A Active JP4846700B2 (ja) | 2007-08-02 | 2007-12-06 | ダイレクト型バックライトモジュールおよびエッジ型バックライトモジュール |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090034288A1 (ja) |
JP (2) | JP4846700B2 (ja) |
TW (1) | TWI342628B (ja) |
Families Citing this family (10)
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TWI427757B (zh) * | 2009-04-24 | 2014-02-21 | Innolux Corp | 發光二極體封裝結構、發光組件、直下式發光模組及顯示裝置 |
TWI456804B (zh) * | 2010-05-20 | 2014-10-11 | Advanced Optoelectronic Tech | 發光二極體之封裝結構 |
CN101949526B (zh) * | 2010-07-12 | 2012-11-14 | 深圳市华星光电技术有限公司 | 侧入式背光模块及其背板散热构造 |
US8702292B2 (en) | 2010-09-22 | 2014-04-22 | Terralux, Inc. | Linear illumination devices having light guides and LED-based illumination modules |
US20120120679A1 (en) * | 2010-11-16 | 2012-05-17 | Chi Lin Technology Co., Ltd. | Backlight module, light guide plate thereof and ink thereof |
TWI462068B (zh) | 2011-06-20 | 2014-11-21 | Au Optronics Corp | 有機發光顯示模組及其製作方法 |
WO2014133367A1 (ko) * | 2013-02-28 | 2014-09-04 | 서울반도체 주식회사 | 발광 모듈 |
KR20140108172A (ko) | 2013-02-28 | 2014-09-05 | 서울반도체 주식회사 | 발광 모듈 |
KR102204953B1 (ko) * | 2014-06-25 | 2021-01-19 | 삼성디스플레이 주식회사 | 형광 시트 및 이를 포함하는 라이트 유닛과 액정 표시 장치 |
KR102370682B1 (ko) * | 2015-08-06 | 2022-03-07 | 삼성디스플레이 주식회사 | 표시 장치 |
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JP2003163376A (ja) * | 2001-11-29 | 2003-06-06 | Matsushita Electric Ind Co Ltd | 波長変換材料及び発光素子 |
JP5138145B2 (ja) * | 2002-11-12 | 2013-02-06 | 日亜化学工業株式会社 | 蛍光体積層構造及びそれを用いる光源 |
US20070053208A1 (en) * | 2003-05-09 | 2007-03-08 | Koninklijke Philips Electronics, N.V. | Uv light source coated with nano-particles of phosphor |
TWI332091B (en) * | 2003-07-22 | 2010-10-21 | Univ Tokyo Nat Univ Corp | Polarized plate of reflection type,laminated optical device and liquid display device |
JP2006257385A (ja) * | 2004-09-09 | 2006-09-28 | Showa Denko Kk | 酸窒化物系蛍光体及びその製造法 |
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JP4961799B2 (ja) * | 2005-04-08 | 2012-06-27 | 日亜化学工業株式会社 | スクリーン印刷で形成したシリコーン樹脂層を有する発光装置 |
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US20060291203A1 (en) * | 2005-06-27 | 2006-12-28 | Munisamy Anandan | Fiber mixed R-G-B white emitting LED package |
WO2007037662A1 (en) * | 2005-09-30 | 2007-04-05 | Seoul Semiconductor Co., Ltd. | Light emitting device and lcd backlight using the same |
TWI274900B (en) * | 2006-01-12 | 2007-03-01 | Entire Technology Co Ltd | A light diffusion board for improving light diffusion and enhancing brightness |
-
2007
- 2007-08-02 TW TW096128414A patent/TWI342628B/zh active
- 2007-11-06 US US11/935,412 patent/US20090034288A1/en not_active Abandoned
- 2007-12-06 JP JP2007316339A patent/JP4846700B2/ja active Active
-
2011
- 2011-09-09 JP JP2011197324A patent/JP5460665B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2011249855A (ja) | 2011-12-08 |
TW200908365A (en) | 2009-02-16 |
US20090034288A1 (en) | 2009-02-05 |
TWI342628B (en) | 2011-05-21 |
JP2009038334A (ja) | 2009-02-19 |
JP4846700B2 (ja) | 2011-12-28 |
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