TWI456804B - 發光二極體之封裝結構 - Google Patents

發光二極體之封裝結構 Download PDF

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Publication number
TWI456804B
TWI456804B TW099116067A TW99116067A TWI456804B TW I456804 B TWI456804 B TW I456804B TW 099116067 A TW099116067 A TW 099116067A TW 99116067 A TW99116067 A TW 99116067A TW I456804 B TWI456804 B TW I456804B
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TW
Taiwan
Prior art keywords
package
light
emitting diode
phosphor powder
scattering
Prior art date
Application number
TW099116067A
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English (en)
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TW201143163A (en
Inventor
Chi Wei Liao
Wen Liang Tseng
Chih Yung Lin
Min Tsun Shieh
Ching Lien Yeh
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Advanced Optoelectronic Tech
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Application filed by Advanced Optoelectronic Tech filed Critical Advanced Optoelectronic Tech
Priority to TW099116067A priority Critical patent/TWI456804B/zh
Publication of TW201143163A publication Critical patent/TW201143163A/zh
Application granted granted Critical
Publication of TWI456804B publication Critical patent/TWI456804B/zh

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Claims (7)

  1. 一種發光二極體之封裝結構,其包括一基板、貼設在基板上之發光二極體晶片及一封裝體,其改良在於:所述封裝體設置一光散射結構,該光散射結構對光之散射強度與照射在所述封裝體上各區域之光強大小呈同向增減,其中所述光散射結構係於所述封裝體之表面進行霧化或噴砂處理,其中所述封裝體之表面霧化程度或噴砂處理後之砂粒密度係從所述封裝體之中部到底部逐漸減小。
  2. 如申請專利範圍第1項所述之發光二極體之封裝結構,其中所述光散射結構係於所述封裝體內設置散射粒子。
  3. 如申請專利範圍第2項所述之發光二極體之封裝結構,其中所述散射粒子之密度由所述封裝體之中部到底部逐漸減小。
  4. 如申請專利範圍第1項所述之發光二極體之封裝結構,其中所述封裝體包含螢光粉,該螢光粉與所述發光二極體晶片之間形成一空間。
  5. 如申請專利範圍第4項所述之發光二極體之封裝結構,其中所述螢光粉位於該封裝體之外表面上、內表面上或該封裝體之中。
  6. 如申請專利範圍第1項所述之發光二極體之封裝結構,其中所述封裝體包含有螢光粉,該螢光粉之密度與照射在封裝體上各區域之光強大小呈同向增減。
  7. 如申請專利範圍第6項所述之發光二極體之封裝結構,其中所述螢光粉之密度係從封裝體之中部到底部逐漸減小。
TW099116067A 2010-05-20 2010-05-20 發光二極體之封裝結構 TWI456804B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW099116067A TWI456804B (zh) 2010-05-20 2010-05-20 發光二極體之封裝結構

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099116067A TWI456804B (zh) 2010-05-20 2010-05-20 發光二極體之封裝結構

Publications (2)

Publication Number Publication Date
TW201143163A TW201143163A (en) 2011-12-01
TWI456804B true TWI456804B (zh) 2014-10-11

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TW099116067A TWI456804B (zh) 2010-05-20 2010-05-20 發光二極體之封裝結構

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10693046B2 (en) 2015-12-30 2020-06-23 Maven Optronics Co., Ltd. Chip scale packaging light emitting device and manufacturing method of the same
TWI581465B (zh) * 2015-12-30 2017-05-01 行家光電股份有限公司 晶片級封裝發光裝置及其製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200516784A (en) * 2003-11-14 2005-05-16 Hon Hai Prec Ind Co Ltd Surface light source devie and light emitting diode
TW200908365A (en) * 2007-08-02 2009-02-16 Lighthouse Technology Co Ltd Light emitting diode package, direct type back light module and side type backlight module
TW201003973A (en) * 2008-07-11 2010-01-16 Glory Science Co Ltd Method of controlling LED luminous intensity and LED structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200516784A (en) * 2003-11-14 2005-05-16 Hon Hai Prec Ind Co Ltd Surface light source devie and light emitting diode
TW200908365A (en) * 2007-08-02 2009-02-16 Lighthouse Technology Co Ltd Light emitting diode package, direct type back light module and side type backlight module
TW201003973A (en) * 2008-07-11 2010-01-16 Glory Science Co Ltd Method of controlling LED luminous intensity and LED structure

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Publication number Publication date
TW201143163A (en) 2011-12-01

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