WO2012091329A3 - 발광소자의 제조방법과 이 방법에 의해 제조된 발광소자 - Google Patents

발광소자의 제조방법과 이 방법에 의해 제조된 발광소자 Download PDF

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Publication number
WO2012091329A3
WO2012091329A3 PCT/KR2011/009647 KR2011009647W WO2012091329A3 WO 2012091329 A3 WO2012091329 A3 WO 2012091329A3 KR 2011009647 W KR2011009647 W KR 2011009647W WO 2012091329 A3 WO2012091329 A3 WO 2012091329A3
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WIPO (PCT)
Prior art keywords
light
emitting device
concavo
convex portion
forming
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PCT/KR2011/009647
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English (en)
French (fr)
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WO2012091329A2 (ko
Inventor
이종람
송양희
유철종
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포항공과대학교 산학협력단
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Publication of WO2012091329A2 publication Critical patent/WO2012091329A2/ko
Publication of WO2012091329A3 publication Critical patent/WO2012091329A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

본 발명은 발광다이오드에 도포되는 형광체의 도포면적을 넓히고 형광체의 도포위치를 활성층(SQW 또는 MQW)과 가까운 위치에 배치함으로써, 발광효율을 크게 향상시킨 발광소자에 관한 것이다. 본 발명에 따른 발광소자의 제조방법은, 기판의 표면에 요철부를 형성하고, 상기 기판상에 제1 반도체층, 활성층, 제2 반도체층을 상기 요철부의 형상이 유지되도록 순차적으로 형성함으로써, 발광다이오드의 일면에 요철부가 형성되도록 하는 단계와, 상기 발광다이오드에 형성된 요철부의 요부(凹部)에 형광체를 삽입되도록 도포하는 단계를 포함한다.
PCT/KR2011/009647 2010-12-30 2011-12-15 발광소자의 제조방법과 이 방법에 의해 제조된 발광소자 WO2012091329A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100139640A KR20120077612A (ko) 2010-12-30 2010-12-30 발광소자의 제조방법과 이 방법에 의해 제조된 발광소자
KR10-2010-0139640 2010-12-30

Publications (2)

Publication Number Publication Date
WO2012091329A2 WO2012091329A2 (ko) 2012-07-05
WO2012091329A3 true WO2012091329A3 (ko) 2012-08-23

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Application Number Title Priority Date Filing Date
PCT/KR2011/009647 WO2012091329A2 (ko) 2010-12-30 2011-12-15 발광소자의 제조방법과 이 방법에 의해 제조된 발광소자

Country Status (2)

Country Link
KR (1) KR20120077612A (ko)
WO (1) WO2012091329A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10763111B2 (en) 2014-07-14 2020-09-01 Industry-University Cooperation Foundation Hanyang University Polyhedron of which upper width is narrower than lower width, manufacturing method therefor, and photoelectric conversion device comprising same
WO2016010339A1 (ko) * 2014-07-14 2016-01-21 한양대학교 산학협력단 하부 폭에 비해 상부 폭이 좁은 다면체, 이의 제조방법, 및 이를 포함하는 광전변환소자
KR101600196B1 (ko) * 2014-07-14 2016-03-07 한양대학교 산학협력단 하부 폭에 비해 상부 폭이 좁은 다면체를 포함하는 발광다이오드 및 이의 제조방법
KR102252994B1 (ko) 2014-12-18 2021-05-20 삼성전자주식회사 발광소자 패키지 및 발광소자 패키지용 파장 변환 필름
CN108598236A (zh) * 2018-04-28 2018-09-28 华灿光电(苏州）有限公司 一种发光二极管外延片及其制作方法
CN108899399B (zh) * 2018-05-29 2019-11-29 华灿光电（浙江）有限公司 一种发光二极管外延片及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243726A (ja) * 2001-12-14 2003-08-29 Nichia Chem Ind Ltd 発光装置およびその製造方法
KR20040005612A (ko) * 2002-07-08 2004-01-16 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
KR20070008026A (ko) * 2005-07-12 2007-01-17 삼성전기주식회사 발광다이오드 및 그 제조방법
KR20090026688A (ko) * 2007-09-10 2009-03-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US20100259184A1 (en) * 2006-02-24 2010-10-14 Ryou Kato Light-emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243726A (ja) * 2001-12-14 2003-08-29 Nichia Chem Ind Ltd 発光装置およびその製造方法
KR20040005612A (ko) * 2002-07-08 2004-01-16 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
KR20070008026A (ko) * 2005-07-12 2007-01-17 삼성전기주식회사 발광다이오드 및 그 제조방법
US20100259184A1 (en) * 2006-02-24 2010-10-14 Ryou Kato Light-emitting device
KR20090026688A (ko) * 2007-09-10 2009-03-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법

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Publication number Publication date
WO2012091329A2 (ko) 2012-07-05
KR20120077612A (ko) 2012-07-10

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