JP5456221B2 - 制御された有機蒸気及び不活性ガス混合物の発生方法及び装置 - Google Patents

制御された有機蒸気及び不活性ガス混合物の発生方法及び装置 Download PDF

Info

Publication number
JP5456221B2
JP5456221B2 JP2000123093A JP2000123093A JP5456221B2 JP 5456221 B2 JP5456221 B2 JP 5456221B2 JP 2000123093 A JP2000123093 A JP 2000123093A JP 2000123093 A JP2000123093 A JP 2000123093A JP 5456221 B2 JP5456221 B2 JP 5456221B2
Authority
JP
Japan
Prior art keywords
liquid
gas
chamber
control circuit
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000123093A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001009261A5 (enExample
JP2001009261A (ja
Inventor
ティ． ヌギューエン ソン
ヘンドリクソン スコット
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2001009261A publication Critical patent/JP2001009261A/ja
Publication of JP2001009261A5 publication Critical patent/JP2001009261A5/ja
Application granted granted Critical
Publication of JP5456221B2 publication Critical patent/JP5456221B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
JP2000123093A 1999-04-22 2000-04-24 制御された有機蒸気及び不活性ガス混合物の発生方法及び装置 Expired - Fee Related JP5456221B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/298319 1999-04-22
US09/298,319 US6311959B1 (en) 1999-04-22 1999-04-22 Method and apparatus for generating controlled mixture of organic vapor and inert gas

Publications (3)

Publication Number Publication Date
JP2001009261A JP2001009261A (ja) 2001-01-16
JP2001009261A5 JP2001009261A5 (enExample) 2010-08-26
JP5456221B2 true JP5456221B2 (ja) 2014-03-26

Family

ID=23149997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000123093A Expired - Fee Related JP5456221B2 (ja) 1999-04-22 2000-04-24 制御された有機蒸気及び不活性ガス混合物の発生方法及び装置

Country Status (7)

Country Link
US (1) US6311959B1 (enExample)
EP (1) EP1047113B1 (enExample)
JP (1) JP5456221B2 (enExample)
KR (1) KR100687382B1 (enExample)
DE (1) DE60029670T2 (enExample)
SG (1) SG93227A1 (enExample)
TW (1) TW426541B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002354927A1 (en) * 2001-07-16 2003-03-03 Mks Instruments, Inc. Vapor delivery system
EP1566464B1 (de) * 2004-02-20 2011-04-13 Cs Clean Systems Ag Vorrichtung und Verfahren zum Nachfüllen eines Blasenverdampfers

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2219768A1 (de) * 1972-04-22 1973-10-31 Bosch Gmbh Robert Einrichtung zur regelung des massenverhaeltnisses des kraftstoff-luft-gemisches einer brennkraftmaschine
US4235829A (en) * 1979-05-07 1980-11-25 Western Electric Company, Inc. Vapor delivery system and method of maintaining a constant level of liquid therein
US4436674A (en) * 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
US4582480A (en) * 1984-08-02 1986-04-15 At&T Technologies, Inc. Methods of and apparatus for vapor delivery control in optical preform manufacture
US4979643A (en) * 1985-06-21 1990-12-25 Air Products And Chemicals, Inc. Chemical refill system
DE3708967A1 (de) * 1987-03-19 1988-10-06 Merck Patent Gmbh Vorrichtung zur erzeugung eines gasgemisches nach dem saettigungsverfahren
JP2846891B2 (ja) * 1988-06-03 1999-01-13 東京エレクトロン株式会社 処理装置
US4979545A (en) * 1988-10-31 1990-12-25 Olin Corporation Bubbler container automatic refill system
DE68917561T2 (de) * 1988-11-23 1995-04-13 Applied Materials Inc Anlage zum chemischen Bedampfen aus der Gasphase und Bauteil zur Versorgung mit Reaktionsmitteln.
US5030362A (en) * 1989-08-21 1991-07-09 Exxon Chemical Patents Inc. Process for stripping liquid systems and sparger system useful therefor
JPH0692558A (ja) * 1990-09-28 1994-04-05 Otis Elevator Co 発進時の揺れ及び過剰加速を低減するエレベータの発進制御装置
US5440887A (en) * 1991-02-05 1995-08-15 Applied Materials, Inc. Liquid vaporizer-feeder
JPH04295089A (ja) * 1991-03-26 1992-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 酸化物超電導膜製造装置
US5203925A (en) * 1991-06-20 1993-04-20 Matsushita Electric Industrial Co., Ltd. Apparatus for producing a thin film of tantalum oxide
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5381742A (en) * 1993-09-17 1995-01-17 Landa, Inc. Waste liquid evaporator
US5520969A (en) * 1994-02-04 1996-05-28 Applied Materials, Inc. Method for in-situ liquid flow rate estimation and verification
US5531183A (en) * 1994-07-13 1996-07-02 Applied Materials, Inc. Vaporization sequence for multiple liquid precursors used in semiconductor thin film applications
US5551309A (en) * 1995-01-17 1996-09-03 Olin Corporation Computer-controlled chemical dispensing with alternative operating modes
US6019114A (en) * 1997-02-12 2000-02-01 Icon Dynaamics, Llc Self-metering reservoir
US5966499A (en) * 1997-07-28 1999-10-12 Mks Instruments, Inc. System for delivering a substantially constant vapor flow to a chemical process reactor
US5972117A (en) * 1997-09-03 1999-10-26 Applied Materials, Inc. Method and apparatus for monitoring generation of liquid chemical vapor
US6135433A (en) * 1998-02-27 2000-10-24 Air Liquide America Corporation Continuous gas saturation system and method
US6161398A (en) * 1998-04-09 2000-12-19 Lucent Technologies, Inc. Methods of and systems for vapor delivery control in optical preform manufacture

Also Published As

Publication number Publication date
EP1047113A2 (en) 2000-10-25
KR20010049277A (ko) 2001-06-15
KR100687382B1 (ko) 2007-02-26
TW426541B (en) 2001-03-21
JP2001009261A (ja) 2001-01-16
US6311959B1 (en) 2001-11-06
DE60029670D1 (de) 2006-09-14
EP1047113B1 (en) 2006-08-02
DE60029670T2 (de) 2007-08-02
SG93227A1 (en) 2002-12-17
EP1047113A3 (en) 2001-06-27

Similar Documents

Publication Publication Date Title
US10087523B2 (en) Vapor delivery method and apparatus for solid and liquid precursors
JP6417052B2 (ja) 基板処理装置、半導体装置の製造方法及びプログラム
US10385457B2 (en) Raw material gas supply apparatus, raw material gas supply method and storage medium
KR20230062519A (ko) 비말 동반된 증기를 측정하기 위한 시스템들 및 방법들
TWI804993B (zh) 基板處理裝置、半導體裝置的製造方法及程式
JP6038288B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
US6482266B1 (en) Metal organic chemical vapor deposition method and apparatus
TWI892504B (zh) 前驅物遞送系統、前驅物供應套組及相關方法
EP1844178B1 (en) High accuracy vapor generation and delivery for thin film deposition
US10256101B2 (en) Raw material gas supply apparatus, raw material gas supply method and storage medium
JP5456221B2 (ja) 制御された有機蒸気及び不活性ガス混合物の発生方法及び装置
JPH0653926B2 (ja) 化学蒸着装置
JP2001313288A (ja) 原料ガス供給装置
TWI864586B (zh) 流體供給系統、基板處理裝置及半導體裝置之製造方法暨程式
JP4213331B2 (ja) 有機金属気相成長方法及び有機金属気相成長装置
JP3756462B2 (ja) 成膜方法
JP2007027567A (ja) プラズマ処理装置
KR102725536B1 (ko) 기판 처리 시스템에서 액체의 흐름을 일정하게 유지시키는 배관 구조
JP3106991B2 (ja) 液体材料気化装置
TW202449217A (zh) 流過式蒸汽前驅物輸送
KR101490438B1 (ko) 증착장비의 기화기
JPH0372078A (ja) 薄膜作成方法および装置
KR20240177317A (ko) 재료 감시 시스템, 처리 장치, 반도체 장치의 제조 방법 및 프로그램
CN119318010A (zh) 用于减少液体和气体质量流量控制器设备流量准确度误差的系统和方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070314

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100413

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20100414

A524 Written submission of copy of amendment under section 19 (pct)

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20100713

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101130

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110510

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110803

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120515

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120912

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20120920

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20121102

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130813

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130816

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130917

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140108

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees