DE60029670T2 - Verfahren und Vorrichtung zur Erzeugung einer kontrollierten Mischung aus organischen Dämpfen und Inertgas - Google Patents

Verfahren und Vorrichtung zur Erzeugung einer kontrollierten Mischung aus organischen Dämpfen und Inertgas Download PDF

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Publication number
DE60029670T2
DE60029670T2 DE60029670T DE60029670T DE60029670T2 DE 60029670 T2 DE60029670 T2 DE 60029670T2 DE 60029670 T DE60029670 T DE 60029670T DE 60029670 T DE60029670 T DE 60029670T DE 60029670 T2 DE60029670 T2 DE 60029670T2
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DE
Germany
Prior art keywords
liquid
gas
chamber
control circuit
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60029670T
Other languages
German (de)
English (en)
Other versions
DE60029670D1 (de
Inventor
Son T. San Jose Nguyen
Scott San Jose Hendrickson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE60029670D1 publication Critical patent/DE60029670D1/de
Application granted granted Critical
Publication of DE60029670T2 publication Critical patent/DE60029670T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
DE60029670T 1999-04-22 2000-03-09 Verfahren und Vorrichtung zur Erzeugung einer kontrollierten Mischung aus organischen Dämpfen und Inertgas Expired - Fee Related DE60029670T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US298319 1999-04-22
US09/298,319 US6311959B1 (en) 1999-04-22 1999-04-22 Method and apparatus for generating controlled mixture of organic vapor and inert gas

Publications (2)

Publication Number Publication Date
DE60029670D1 DE60029670D1 (de) 2006-09-14
DE60029670T2 true DE60029670T2 (de) 2007-08-02

Family

ID=23149997

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60029670T Expired - Fee Related DE60029670T2 (de) 1999-04-22 2000-03-09 Verfahren und Vorrichtung zur Erzeugung einer kontrollierten Mischung aus organischen Dämpfen und Inertgas

Country Status (7)

Country Link
US (1) US6311959B1 (enExample)
EP (1) EP1047113B1 (enExample)
JP (1) JP5456221B2 (enExample)
KR (1) KR100687382B1 (enExample)
DE (1) DE60029670T2 (enExample)
SG (1) SG93227A1 (enExample)
TW (1) TW426541B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002354927A1 (en) * 2001-07-16 2003-03-03 Mks Instruments, Inc. Vapor delivery system
EP1566464B1 (de) * 2004-02-20 2011-04-13 Cs Clean Systems Ag Vorrichtung und Verfahren zum Nachfüllen eines Blasenverdampfers

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2219768A1 (de) * 1972-04-22 1973-10-31 Bosch Gmbh Robert Einrichtung zur regelung des massenverhaeltnisses des kraftstoff-luft-gemisches einer brennkraftmaschine
US4235829A (en) * 1979-05-07 1980-11-25 Western Electric Company, Inc. Vapor delivery system and method of maintaining a constant level of liquid therein
US4436674A (en) * 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
US4582480A (en) * 1984-08-02 1986-04-15 At&T Technologies, Inc. Methods of and apparatus for vapor delivery control in optical preform manufacture
US4979643A (en) * 1985-06-21 1990-12-25 Air Products And Chemicals, Inc. Chemical refill system
DE3708967A1 (de) * 1987-03-19 1988-10-06 Merck Patent Gmbh Vorrichtung zur erzeugung eines gasgemisches nach dem saettigungsverfahren
JP2846891B2 (ja) * 1988-06-03 1999-01-13 東京エレクトロン株式会社 処理装置
US4979545A (en) * 1988-10-31 1990-12-25 Olin Corporation Bubbler container automatic refill system
DE68917561T2 (de) * 1988-11-23 1995-04-13 Applied Materials Inc Anlage zum chemischen Bedampfen aus der Gasphase und Bauteil zur Versorgung mit Reaktionsmitteln.
US5030362A (en) * 1989-08-21 1991-07-09 Exxon Chemical Patents Inc. Process for stripping liquid systems and sparger system useful therefor
JPH0692558A (ja) * 1990-09-28 1994-04-05 Otis Elevator Co 発進時の揺れ及び過剰加速を低減するエレベータの発進制御装置
US5440887A (en) * 1991-02-05 1995-08-15 Applied Materials, Inc. Liquid vaporizer-feeder
JPH04295089A (ja) * 1991-03-26 1992-10-20 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center 酸化物超電導膜製造装置
US5203925A (en) * 1991-06-20 1993-04-20 Matsushita Electric Industrial Co., Ltd. Apparatus for producing a thin film of tantalum oxide
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5381742A (en) * 1993-09-17 1995-01-17 Landa, Inc. Waste liquid evaporator
US5520969A (en) * 1994-02-04 1996-05-28 Applied Materials, Inc. Method for in-situ liquid flow rate estimation and verification
US5531183A (en) * 1994-07-13 1996-07-02 Applied Materials, Inc. Vaporization sequence for multiple liquid precursors used in semiconductor thin film applications
US5551309A (en) * 1995-01-17 1996-09-03 Olin Corporation Computer-controlled chemical dispensing with alternative operating modes
US6019114A (en) * 1997-02-12 2000-02-01 Icon Dynaamics, Llc Self-metering reservoir
US5966499A (en) * 1997-07-28 1999-10-12 Mks Instruments, Inc. System for delivering a substantially constant vapor flow to a chemical process reactor
US5972117A (en) * 1997-09-03 1999-10-26 Applied Materials, Inc. Method and apparatus for monitoring generation of liquid chemical vapor
US6135433A (en) * 1998-02-27 2000-10-24 Air Liquide America Corporation Continuous gas saturation system and method
US6161398A (en) * 1998-04-09 2000-12-19 Lucent Technologies, Inc. Methods of and systems for vapor delivery control in optical preform manufacture

Also Published As

Publication number Publication date
EP1047113A2 (en) 2000-10-25
KR20010049277A (ko) 2001-06-15
KR100687382B1 (ko) 2007-02-26
JP5456221B2 (ja) 2014-03-26
TW426541B (en) 2001-03-21
JP2001009261A (ja) 2001-01-16
US6311959B1 (en) 2001-11-06
DE60029670D1 (de) 2006-09-14
EP1047113B1 (en) 2006-08-02
SG93227A1 (en) 2002-12-17
EP1047113A3 (en) 2001-06-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee