JP5456221B2 - 制御された有機蒸気及び不活性ガス混合物の発生方法及び装置 - Google Patents
制御された有機蒸気及び不活性ガス混合物の発生方法及び装置 Download PDFInfo
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- JP5456221B2 JP5456221B2 JP2000123093A JP2000123093A JP5456221B2 JP 5456221 B2 JP5456221 B2 JP 5456221B2 JP 2000123093 A JP2000123093 A JP 2000123093A JP 2000123093 A JP2000123093 A JP 2000123093A JP 5456221 B2 JP5456221 B2 JP 5456221B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
Description
Claims (9)
- 液体蒸気とガスの混合物を、蒸気とガスの混合物中の蒸気の量を正確に制御した状態で発生させる装置であって、前記装置は:
蒸発する液体を含むチャンバを画成するハウジングと;
設定レベルまで液体をチャンバに流入させる液体供給源と;
前記チャンバ内で液体を通してバブリングして液体を蒸発させるためにガスを前記チャンバに流入させるガス供給源と;
蒸気とガスの混合物を前記チャンバから排気する排気路と;
前記ガス供給源及び前記液体供給源を制御する制御回路であって、前記制御回路は、
前記チャンバへの前記液体の流れを測定するとともに流れの速度が所望の量より早いか遅いかを判定することによってフィードバック信号を発生させ、前記フィードバック信号は、前記チャンバへのガスを調節して、該チャンバから排出された結果として生じる混合物における蒸気のガスに対する比を制御する、制御回路と;
を備える装置。
- 前記ハウジングは絶縁され、更に、前記チャンバ内の前記液体を周囲よりやや高い正確な温度に維持する温度制御手段を備える、請求項1記載の装置。
- 請求項1に記載の装置であって、
前記ハウジングは、バブラーチャンバを囲むとともにそれを熱的に絶縁し、これにより、蒸発する液体を含むチャンバを画成し、;
前記制御回路は、
前記バブラーチャンバとその中の液体とを所望の温度に正確に維持する温度制御手段と;
前記液体供給源および前記チャンバへの液体の流れを制御する液体制御回路と;
前記ガス供給源と前記チャンバへのガスの流れとを制御するガス制御回路と;
前記チャンバから排気された結果として得られた混合物中の蒸気対ガス比が制御されるように前記チャンバ内の前記液体を前記設定レベルに維持する流量に、前記チャンバへのガスの流れまたは液体の流れを維持するための、前記液体制御回路から前記ガス制御回路または前記液体制御回路へのフィードバック手段と;
を備える装置。
- 前記液体供給源が液体ソレノイドバルブを含み、前記ガス供給源がガスソレノイドバルブを含み、前記バルブがそれぞれの制御回路によって制御される、請求項1記載の装置。
- 前記フィードバック手段が、前記チャンバ内の前記液体のレベルの前記設定レベルからの偏りを表す、前記液体制御回路から前記ガス制御回路への信号を送るための信号路を含む、請求項4記載の装置。
- 前記液体供給源が更に液体流量計を含み、前記ガス供給源が更にガス流量計を含み、前記液体流量計からの信号は前記液体制御回路に結合され、前記ガス流量計からの信号は前記ガス制御回路に結合される、請求項4記載の装置。
- 更に、各々が前記装置と本質的に同一で、それらの少なくとも一部は各々が異なる有機液体を供給される、複数の追加装置を備えることによって、コマンドによって直ちに、異なる有機蒸気と不活性ガスとの混合物を必要に応じて半導体製造の所定の処理ステップのために供給できるようにした、請求項3記載の装置。
- 請求項3に記載の装置であって、
前記液体供給源は、液体流量計と液体ソレノイドバルブとを含み、
前記ガス供給源は、ガス流量計とガスソレノイドバルブとを含み、
前記液体制御回路は、前記チャンバへの液体の流れをモニタするとともにその流量を所定の流量に対して測定するための電子要素を含み、且つ、前記液体流量計に結合され、
前記ガス制御回路は、前記ガス供給手段と前記チャンバへのガスの流れとを制御するための電子要素を含み、且つ、前記ガス流量計と前記ガスソレノイドバルブに結合され、
入力信号を前記液体制御回路に与えて前記バブラーチャンバへの液体の所望の流量を指示するためと、入力信号を前記ガス制御回路に与えて前記バブラーチャンバへのガスの流量を確立するか又は入力信号を前記液体制御回路に与えて前記バブラーチャンバへの液体の流量を確立するためのコンピュータ入力手段を備える装置。
- 前記排気路が、入力ガス流を前記バブラーチャンバの代わりに直接に前記排気路へバイパスする出力ソレノイドバルブを含み、前記排気路から蒸気−ガス混合物をパージできるようにした、請求項7記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/298,319 US6311959B1 (en) | 1999-04-22 | 1999-04-22 | Method and apparatus for generating controlled mixture of organic vapor and inert gas |
US09/298319 | 1999-04-22 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001009261A JP2001009261A (ja) | 2001-01-16 |
JP2001009261A5 JP2001009261A5 (ja) | 2010-08-26 |
JP5456221B2 true JP5456221B2 (ja) | 2014-03-26 |
Family
ID=23149997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000123093A Expired - Fee Related JP5456221B2 (ja) | 1999-04-22 | 2000-04-24 | 制御された有機蒸気及び不活性ガス混合物の発生方法及び装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6311959B1 (ja) |
EP (1) | EP1047113B1 (ja) |
JP (1) | JP5456221B2 (ja) |
KR (1) | KR100687382B1 (ja) |
DE (1) | DE60029670T2 (ja) |
SG (1) | SG93227A1 (ja) |
TW (1) | TW426541B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10297050T5 (de) | 2001-07-16 | 2004-07-08 | Mks Instruments Inc., Andover | Dampfversorgungssystem |
DE502004012396D1 (de) * | 2004-02-20 | 2011-05-26 | Cs Clean Systems Ag | Vorrichtung und Verfahren zum Nachfüllen eines Blasenverdampfers |
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DE2219768A1 (de) * | 1972-04-22 | 1973-10-31 | Bosch Gmbh Robert | Einrichtung zur regelung des massenverhaeltnisses des kraftstoff-luft-gemisches einer brennkraftmaschine |
US4235829A (en) * | 1979-05-07 | 1980-11-25 | Western Electric Company, Inc. | Vapor delivery system and method of maintaining a constant level of liquid therein |
US4436674A (en) * | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
US4582480A (en) * | 1984-08-02 | 1986-04-15 | At&T Technologies, Inc. | Methods of and apparatus for vapor delivery control in optical preform manufacture |
US4979643A (en) * | 1985-06-21 | 1990-12-25 | Air Products And Chemicals, Inc. | Chemical refill system |
DE3708967A1 (de) * | 1987-03-19 | 1988-10-06 | Merck Patent Gmbh | Vorrichtung zur erzeugung eines gasgemisches nach dem saettigungsverfahren |
KR0156237B1 (ko) * | 1988-06-03 | 1998-12-01 | 고다까 토시오 | 처리액 공급 장치 |
US4979545A (en) * | 1988-10-31 | 1990-12-25 | Olin Corporation | Bubbler container automatic refill system |
US5030362A (en) * | 1989-08-21 | 1991-07-09 | Exxon Chemical Patents Inc. | Process for stripping liquid systems and sparger system useful therefor |
JPH0692558A (ja) * | 1990-09-28 | 1994-04-05 | Otis Elevator Co | 発進時の揺れ及び過剰加速を低減するエレベータの発進制御装置 |
US5440887A (en) * | 1991-02-05 | 1995-08-15 | Applied Materials, Inc. | Liquid vaporizer-feeder |
JPH04295089A (ja) * | 1991-03-26 | 1992-10-20 | Kokusai Chodendo Sangyo Gijutsu Kenkyu Center | 酸化物超電導膜製造装置 |
US5203925A (en) * | 1991-06-20 | 1993-04-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus for producing a thin film of tantalum oxide |
JPH0610144A (ja) * | 1992-06-29 | 1994-01-18 | Matsushita Electric Ind Co Ltd | 低蒸気圧材料供給装置 |
JPH06295862A (ja) * | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | 化合物半導体製造装置及び有機金属材料容器 |
US5381742A (en) * | 1993-09-17 | 1995-01-17 | Landa, Inc. | Waste liquid evaporator |
US5520969A (en) * | 1994-02-04 | 1996-05-28 | Applied Materials, Inc. | Method for in-situ liquid flow rate estimation and verification |
US5531183A (en) * | 1994-07-13 | 1996-07-02 | Applied Materials, Inc. | Vaporization sequence for multiple liquid precursors used in semiconductor thin film applications |
US5551309A (en) * | 1995-01-17 | 1996-09-03 | Olin Corporation | Computer-controlled chemical dispensing with alternative operating modes |
US6019114A (en) * | 1997-02-12 | 2000-02-01 | Icon Dynaamics, Llc | Self-metering reservoir |
US5966499A (en) * | 1997-07-28 | 1999-10-12 | Mks Instruments, Inc. | System for delivering a substantially constant vapor flow to a chemical process reactor |
US5972117A (en) * | 1997-09-03 | 1999-10-26 | Applied Materials, Inc. | Method and apparatus for monitoring generation of liquid chemical vapor |
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US6161398A (en) * | 1998-04-09 | 2000-12-19 | Lucent Technologies, Inc. | Methods of and systems for vapor delivery control in optical preform manufacture |
-
1999
- 1999-04-22 US US09/298,319 patent/US6311959B1/en not_active Expired - Fee Related
-
2000
- 2000-02-18 TW TW089102870A patent/TW426541B/zh not_active IP Right Cessation
- 2000-02-23 SG SG200001035A patent/SG93227A1/en unknown
- 2000-03-09 DE DE60029670T patent/DE60029670T2/de not_active Expired - Fee Related
- 2000-03-09 EP EP00301920A patent/EP1047113B1/en not_active Expired - Lifetime
- 2000-04-21 KR KR1020000021193A patent/KR100687382B1/ko not_active IP Right Cessation
- 2000-04-24 JP JP2000123093A patent/JP5456221B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100687382B1 (ko) | 2007-02-26 |
KR20010049277A (ko) | 2001-06-15 |
DE60029670D1 (de) | 2006-09-14 |
SG93227A1 (en) | 2002-12-17 |
EP1047113B1 (en) | 2006-08-02 |
EP1047113A2 (en) | 2000-10-25 |
EP1047113A3 (en) | 2001-06-27 |
US6311959B1 (en) | 2001-11-06 |
JP2001009261A (ja) | 2001-01-16 |
TW426541B (en) | 2001-03-21 |
DE60029670T2 (de) | 2007-08-02 |
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