JP5441798B2 - 放射線検出素子の製造方法及び放射線検出素子 - Google Patents

放射線検出素子の製造方法及び放射線検出素子 Download PDF

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Publication number
JP5441798B2
JP5441798B2 JP2010088795A JP2010088795A JP5441798B2 JP 5441798 B2 JP5441798 B2 JP 5441798B2 JP 2010088795 A JP2010088795 A JP 2010088795A JP 2010088795 A JP2010088795 A JP 2010088795A JP 5441798 B2 JP5441798 B2 JP 5441798B2
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Japan
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columnar
scintillator
substrate
flat
scintillators
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Expired - Fee Related
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JP2010088795A
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English (en)
Japanese (ja)
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JP2011220774A (ja
JP2011220774A5 (enExample
Inventor
達也 斉藤
亮子 堀江
伸浩 安居
透 田
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Canon Inc
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Canon Inc
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Priority to JP2010088795A priority Critical patent/JP5441798B2/ja
Priority to US13/072,579 priority patent/US8138011B2/en
Publication of JP2011220774A publication Critical patent/JP2011220774A/ja
Publication of JP2011220774A5 publication Critical patent/JP2011220774A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
JP2010088795A 2010-04-07 2010-04-07 放射線検出素子の製造方法及び放射線検出素子 Expired - Fee Related JP5441798B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010088795A JP5441798B2 (ja) 2010-04-07 2010-04-07 放射線検出素子の製造方法及び放射線検出素子
US13/072,579 US8138011B2 (en) 2010-04-07 2011-03-25 Radiation-detecting device and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010088795A JP5441798B2 (ja) 2010-04-07 2010-04-07 放射線検出素子の製造方法及び放射線検出素子

Publications (3)

Publication Number Publication Date
JP2011220774A JP2011220774A (ja) 2011-11-04
JP2011220774A5 JP2011220774A5 (enExample) 2013-05-23
JP5441798B2 true JP5441798B2 (ja) 2014-03-12

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JP2010088795A Expired - Fee Related JP5441798B2 (ja) 2010-04-07 2010-04-07 放射線検出素子の製造方法及び放射線検出素子

Country Status (2)

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US (1) US8138011B2 (enExample)
JP (1) JP5441798B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5767512B2 (ja) * 2011-06-07 2015-08-19 キヤノン株式会社 放射線検出素子及び放射線検出器
KR101316639B1 (ko) 2011-11-15 2013-10-15 아스텔 주식회사 엑스레이 디텍터 및 이의 제조방법
JP6041594B2 (ja) * 2012-09-14 2016-12-14 浜松ホトニクス株式会社 シンチレータパネル、及び、放射線検出器
JP6018854B2 (ja) * 2012-09-14 2016-11-02 浜松ホトニクス株式会社 シンチレータパネル、及び、放射線検出器
TWI500926B (zh) * 2012-11-23 2015-09-21 Innocom Tech Shenzhen Co Ltd Ｘ光平板偵測裝置
JP6271909B2 (ja) * 2013-08-20 2018-01-31 キヤノン株式会社 シンチレータ結晶体及び放射線検出器
US9650569B1 (en) * 2015-11-25 2017-05-16 Siemens Medical Solutions Usa, Inc. Method of manufacturing garnet interfaces and articles containing the garnets obtained therefrom
JP6951092B2 (ja) * 2017-03-17 2021-10-20 キヤノンメディカルシステムズ株式会社 放射線検出器、シンチレータアレイ、及びシンチレータアレイの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721476B2 (ja) * 1993-07-07 1998-03-04 浜松ホトニクス株式会社 放射線検出素子及びその製造方法
JP4220025B2 (ja) * 1998-09-02 2009-02-04 浜松ホトニクス株式会社 放射線イメージセンサ及びその製造方法
JP2001128064A (ja) * 1999-10-26 2001-05-11 Canon Inc 放射線検出素子、放射線検出システム、及び放射線検出素子の製造方法
JP2002031687A (ja) * 2000-07-18 2002-01-31 Canon Inc 放射線検出装置
JP4449749B2 (ja) * 2005-01-05 2010-04-14 コニカミノルタホールディングス株式会社 放射線検出装置およびその製造方法
DE102009004120A1 (de) * 2009-01-08 2010-07-15 Siemens Aktiengesellschaft Herstellungsverfahren für eine Sensoreinheit eines Röntgendetektors

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Publication number Publication date
US8138011B2 (en) 2012-03-20
US20110248366A1 (en) 2011-10-13
JP2011220774A (ja) 2011-11-04

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