JP5436853B2 - 投影露光系及び偏光光学素子 - Google Patents

投影露光系及び偏光光学素子 Download PDF

Info

Publication number
JP5436853B2
JP5436853B2 JP2008506975A JP2008506975A JP5436853B2 JP 5436853 B2 JP5436853 B2 JP 5436853B2 JP 2008506975 A JP2008506975 A JP 2008506975A JP 2008506975 A JP2008506975 A JP 2008506975A JP 5436853 B2 JP5436853 B2 JP 5436853B2
Authority
JP
Japan
Prior art keywords
optical element
light
polarizing optical
cone
projection exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008506975A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008538452A (ja
JP2008538452A5 (enExample
Inventor
ハンス・ユルゲン マン
ヴォルフガング ジンガー
トラルフ グルーナー
オーラフ ディットマン
ミヒャエル トツェック
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by カール・ツァイス・エスエムティー・ゲーエムベーハー filed Critical カール・ツァイス・エスエムティー・ゲーエムベーハー
Publication of JP2008538452A publication Critical patent/JP2008538452A/ja
Publication of JP2008538452A5 publication Critical patent/JP2008538452A5/ja
Application granted granted Critical
Publication of JP5436853B2 publication Critical patent/JP5436853B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
JP2008506975A 2005-04-20 2006-04-12 投影露光系及び偏光光学素子 Expired - Fee Related JP5436853B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US67363805P 2005-04-20 2005-04-20
US60/673,638 2005-04-20
PCT/EP2006/003401 WO2006111319A2 (en) 2005-04-20 2006-04-12 Projection exposure system, method for manufacturing a micro-structured structural member by the aid of such a projection exposure system and polarization-optical element adapted for use in such a system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011278378A Division JP5480232B2 (ja) 2005-04-20 2011-12-20 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子

Publications (3)

Publication Number Publication Date
JP2008538452A JP2008538452A (ja) 2008-10-23
JP2008538452A5 JP2008538452A5 (enExample) 2009-04-30
JP5436853B2 true JP5436853B2 (ja) 2014-03-05

Family

ID=36942305

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008506975A Expired - Fee Related JP5436853B2 (ja) 2005-04-20 2006-04-12 投影露光系及び偏光光学素子
JP2011278378A Active JP5480232B2 (ja) 2005-04-20 2011-12-20 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011278378A Active JP5480232B2 (ja) 2005-04-20 2011-12-20 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子

Country Status (4)

Country Link
US (2) US7982854B2 (enExample)
EP (1) EP1872176A2 (enExample)
JP (2) JP5436853B2 (enExample)
WO (1) WO2006111319A2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100559277C (zh) * 2006-11-03 2009-11-11 上海微电子装备有限公司 一种光刻照明系统
US7817250B2 (en) 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
DE102008002749A1 (de) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
DE102009045135A1 (de) 2009-09-30 2011-03-31 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
DE102010001336B3 (de) * 2010-01-28 2011-07-28 Carl Zeiss SMT GmbH, 73447 Anordnung und Verfahren zur Charakterisierung der Polarisationseigenschaften eines optischen Systems
CN103229248B (zh) 2010-09-27 2016-10-12 卡尔蔡司Smt有限责任公司 反射镜，包含这种反射镜的投射物镜，以及包含这种投射物镜的用于微光刻的投射曝光设备
DE102011078928A1 (de) * 2011-07-11 2013-01-17 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
WO2013013947A2 (en) 2011-07-26 2013-01-31 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus, and microlithographic exposure method
DE102012203959A1 (de) 2012-03-14 2013-09-19 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102011086328A1 (de) 2011-11-15 2013-05-16 Carl Zeiss Smt Gmbh Spiegel zum Einsatz zur Führung von Beleuchtungs- und Abbildungslicht in der EUV-Projektionslithografie
DE102012202057B4 (de) 2012-02-10 2021-07-08 Carl Zeiss Smt Gmbh Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement
DE102012203950A1 (de) * 2012-03-14 2013-09-19 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine Projektionsbelichtungsanlage
DE102012206153A1 (de) 2012-04-16 2013-10-17 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102012207865B3 (de) * 2012-05-11 2013-07-11 Carl Zeiss Smt Gmbh Optische Baugruppe für die EUV-Lithographie
DE102012208521A1 (de) 2012-05-22 2013-06-27 Carl Zeiss Smt Gmbh Beleuchtungssystem für eine Projektionsbelichtungsanlage für die Projektionslithographie
DE102012217769A1 (de) * 2012-09-28 2014-04-03 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102012219936A1 (de) 2012-10-31 2014-04-30 Carl Zeiss Smt Gmbh EUV-Lichtquelle zur Erzeugung eines Nutz-Ausgabestrahls für eine Projektionsbelichtungsanlage
DE102012223233A1 (de) 2012-12-14 2014-06-18 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102013200394A1 (de) 2013-01-14 2014-07-17 Carl Zeiss Smt Gmbh Polarisationsmessvorrichtung, Lithographieanlage, Messanordnung, und Verfahren zur Polarisationsmessung
DE102013201133A1 (de) * 2013-01-24 2014-07-24 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102013202590A1 (de) * 2013-02-19 2014-09-04 Carl Zeiss Smt Gmbh EUV-Lichtquelle zur Erzeugung eines Nutz-Ausgabestrahls für eine Projektionsbelichtungsanlage
DE102013202645A1 (de) 2013-02-19 2014-02-27 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102013203294A1 (de) 2013-02-27 2014-08-28 Carl Zeiss Smt Gmbh Optische Baugruppe zur Polarisationsdrehung
WO2014139814A1 (en) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Illumination optical unit for projection lithography
DE102013205957A1 (de) 2013-04-04 2014-04-30 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102014205579A1 (de) 2014-03-26 2015-10-01 Carl Zeiss Smt Gmbh EUV-Lichtquelle für eine Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102014224822A1 (de) * 2014-12-04 2016-06-09 Carl Zeiss Smt Gmbh Spiegel für eine lithographieanlage, projektionssystem für eine lithographieanlage und lithographieanlage
DE102016211993B4 (de) * 2016-07-01 2018-04-12 Carl Zeiss Smt Gmbh Anordnung und Verfahren zum Vermessen eines Polarisationsgrades und wellenlängenselektiver Polarisator
JP7102218B2 (ja) * 2018-05-09 2022-07-19 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び方法
DE102021202847A1 (de) 2021-03-24 2022-09-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine Projektionsbelichtungsanlage für die Lithografie
DE102022100591B9 (de) 2022-01-12 2023-10-26 Carl Zeiss Smt Gmbh Optisches System, insbesondere zur Charakterisierung einer Maske für die Mikrolithographie, und Strahlteiler zur Verwendung in einem solchen optischen System
US12352687B2 (en) 2022-07-06 2025-07-08 Government Of The United States Of America, As Represented By The Secretary Of Commerce Mueller matrix ellipsometer

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3070833D1 (en) * 1980-09-19 1985-08-08 Ibm Deutschland Structure with a silicon body that presents an aperture and method of making this structure
DE3523641C1 (de) * 1985-07-02 1986-12-18 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Einrichtung zum Selektieren von rotationssymmetrischen Polarisationskomponenten einesLichtbuendels und Verwendung einer solchen Einrichtung
US4870648A (en) * 1987-08-07 1989-09-26 The United States Department Of Energy X-ray beamsplitter
JPH03181900A (ja) * 1989-12-12 1991-08-07 Toshiba Corp Ｘ線用ビームスプリッター及びその製造方法
JPH03196000A (ja) * 1989-12-26 1991-08-27 Toshiba Corp 軟ｘ線用ビームスプリッタ
US5222112A (en) 1990-12-27 1993-06-22 Hitachi, Ltd. X-ray pattern masking by a reflective reduction projection optical system
JP3055232B2 (ja) * 1991-08-23 2000-06-26 株式会社日立製作所 半導体装置の製造方法
US6404482B1 (en) * 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
JP2866267B2 (ja) * 1992-12-11 1999-03-08 三菱電機株式会社 光描画装置およびウェハ基板の光描画方法
JP3189528B2 (ja) * 1993-09-24 2001-07-16 株式会社ニコン Ｘ線投影露光装置
JP3358097B2 (ja) * 1994-04-12 2002-12-16 株式会社ニコン Ｘ線投影露光装置
DE19535392A1 (de) * 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
US6438199B1 (en) * 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
EP1035445B1 (de) * 1999-02-15 2007-01-31 Carl Zeiss SMT AG Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
DE50014428D1 (de) * 1999-07-30 2007-08-02 Zeiss Carl Smt Ag Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems
US7053988B2 (en) * 2001-05-22 2006-05-30 Carl Zeiss Smt Ag. Optically polarizing retardation arrangement, and microlithography projection exposure machine
DE10124803A1 (de) * 2001-05-22 2002-11-28 Zeiss Carl Polarisator und Mikrolithographie-Projektionsanlage mit Polarisator
JP3652296B2 (ja) 2001-10-26 2005-05-25 キヤノン株式会社 光学装置
JP2003227914A (ja) * 2002-01-31 2003-08-15 Canon Inc Ｅｕｖ光用の波面分割素子及びそれを有する位相測定装置
JP3689681B2 (ja) * 2002-05-10 2005-08-31 キヤノン株式会社 測定装置及びそれを有する装置群
US7038763B2 (en) 2002-05-31 2006-05-02 Asml Netherlands B.V. Kit of parts for assembling an optical element, method of assembling an optical element, optical element, lithographic apparatus, and device manufacturing method
US7090964B2 (en) * 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
JP4356695B2 (ja) 2003-05-09 2009-11-04 株式会社ニコン 照明光学系、投影露光装置、マイクロデバイスの製造方法
DE10327963A1 (de) * 2003-06-19 2005-01-05 Carl Zeiss Jena Gmbh Polarisationsstrahlteiler
US20040263974A1 (en) * 2003-06-26 2004-12-30 Optical Coating Laboratory Inc., A Jds Unipahse Company And A Corporation Of The State Of Delware Flat polarization conversion system with patterned retarder
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
JP2005303084A (ja) * 2004-04-13 2005-10-27 Nikon Corp 露光装置、露光装置の製造方法、露光装置の調整方法及びマイクロデバイスの製造方法

Also Published As

Publication number Publication date
WO2006111319A3 (en) 2007-05-10
US20080192225A1 (en) 2008-08-14
US8854606B2 (en) 2014-10-07
JP2012060178A (ja) 2012-03-22
EP1872176A2 (en) 2008-01-02
JP2008538452A (ja) 2008-10-23
US20110242517A1 (en) 2011-10-06
JP5480232B2 (ja) 2014-04-23
US7982854B2 (en) 2011-07-19
WO2006111319A2 (en) 2006-10-26

Similar Documents

Publication Publication Date Title
JP5480232B2 (ja) 投影露光系、このような投影露光系の補助により微細構造の構成部材を製造する方法、このような系において使用するために適応させた偏光光学素子
US10146135B2 (en) Microlithographic projection exposure apparatus having a multi-mirror array with temporal stabilisation
JP5650759B2 (ja) 光学系の偏光特性を特性決定する構成体及び方法
JP6221159B2 (ja) コレクター
JP2003059821A (ja) 偏光器を備えた光学結像システムと、それに使用する水晶板
JP6221160B2 (ja) ミラーの配置
TWI592766B (zh) 微影投影曝光設備的光學系統
US20180314165A1 (en) Illumination system of a microlithographic projection exposure apparatus
JP2011164626A (ja) 偏光影響光学装置及びマイクロリソグラフィ投影露光装置の光学系
JP6659827B2 (ja) リソグラフィ方法及び装置

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20080925

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20080925

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080925

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090311

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090311

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110620

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110916

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110927

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111220

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120924

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121221

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130104

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130124

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130131

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130225

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130304

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130325

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131125

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131211

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees