JP5431752B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

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Publication number
JP5431752B2
JP5431752B2 JP2009051667A JP2009051667A JP5431752B2 JP 5431752 B2 JP5431752 B2 JP 5431752B2 JP 2009051667 A JP2009051667 A JP 2009051667A JP 2009051667 A JP2009051667 A JP 2009051667A JP 5431752 B2 JP5431752 B2 JP 5431752B2
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Japan
Prior art keywords
film
gas
titanium
chamber
plasma
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Expired - Fee Related
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JP2009051667A
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English (en)
Japanese (ja)
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JP2010206057A (ja
JP2010206057A5 (https=
Inventor
卓也 二瀬
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2009051667A priority Critical patent/JP5431752B2/ja
Priority to US12/714,491 priority patent/US7964500B2/en
Publication of JP2010206057A publication Critical patent/JP2010206057A/ja
Publication of JP2010206057A5 publication Critical patent/JP2010206057A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/045—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP2009051667A 2009-03-05 2009-03-05 半導体集積回路装置の製造方法 Expired - Fee Related JP5431752B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009051667A JP5431752B2 (ja) 2009-03-05 2009-03-05 半導体集積回路装置の製造方法
US12/714,491 US7964500B2 (en) 2009-03-05 2010-02-27 Method of manufacturing semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009051667A JP5431752B2 (ja) 2009-03-05 2009-03-05 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010206057A JP2010206057A (ja) 2010-09-16
JP2010206057A5 JP2010206057A5 (https=) 2012-03-29
JP5431752B2 true JP5431752B2 (ja) 2014-03-05

Family

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JP2009051667A Expired - Fee Related JP5431752B2 (ja) 2009-03-05 2009-03-05 半導体集積回路装置の製造方法

Country Status (2)

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US (1) US7964500B2 (https=)
JP (1) JP5431752B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5358165B2 (ja) * 2008-11-26 2013-12-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP6025190B2 (ja) * 2012-06-12 2016-11-16 シナプティクス・ジャパン合同会社 Ｓｒａｍ
CN103730468B (zh) * 2012-10-16 2017-12-01 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、sram存储单元、sram存储器
US9431509B2 (en) * 2012-12-31 2016-08-30 Texas Instruments Incorporated High-K metal gate
US9887160B2 (en) * 2015-09-24 2018-02-06 International Business Machines Corporation Multiple pre-clean processes for interconnect fabrication
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
US10304728B2 (en) * 2017-05-01 2019-05-28 Advanced Micro Devices, Inc. Double spacer immersion lithography triple patterning flow and method
US10714334B2 (en) * 2017-11-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive feature formation and structure
US11195923B2 (en) * 2018-12-21 2021-12-07 Applied Materials, Inc. Method of fabricating a semiconductor device having reduced contact resistance
WO2021231122A1 (en) * 2020-05-09 2021-11-18 Lam Research Corporation Methods to improve wafer wettability for plating - enhancement through sensors and control algorithms
KR20230013064A (ko) * 2020-05-22 2023-01-26 램 리써치 코포레이션 유전체 표면들의 습식 작용화
CN114420670B (zh) * 2020-10-28 2024-10-29 上海华力集成电路制造有限公司 通孔及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102345A (ja) 1999-09-27 2001-04-13 Jun Kikuchi 表面処理方法および装置
KR100492155B1 (ko) * 2002-08-08 2005-06-01 삼성전자주식회사 반도체 소자의 실리사이드막 형성방법
KR100735938B1 (ko) * 2004-04-09 2007-07-06 동경 엘렉트론 주식회사 Ｔｉ막 및 ＴｉＮ막의 성막 방법, 접촉 구조체 및 컴퓨터 판독 가능한 기억 매체
DE102005052001B4 (de) * 2005-10-31 2015-04-30 Advanced Micro Devices, Inc. Halbleiterbauelement mit einem Kontaktpfropfen auf Kupferbasis und ein Verfahren zur Herstellung desselben
JP2007214538A (ja) * 2006-01-11 2007-08-23 Renesas Technology Corp 半導体装置およびその製造方法
JP5042517B2 (ja) 2006-04-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007311540A (ja) * 2006-05-18 2007-11-29 Renesas Technology Corp 半導体装置の製造方法
JP5309454B2 (ja) * 2006-10-11 2013-10-09 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5204964B2 (ja) * 2006-10-17 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2008192835A (ja) * 2007-02-05 2008-08-21 Tokyo Electron Ltd 成膜方法，基板処理装置，および半導体装置
JP2008311457A (ja) * 2007-06-15 2008-12-25 Renesas Technology Corp 半導体装置の製造方法
JP2009088421A (ja) 2007-10-03 2009-04-23 Renesas Technology Corp 半導体装置の製造方法

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JP2010206057A (ja) 2010-09-16
US20100227472A1 (en) 2010-09-09
US7964500B2 (en) 2011-06-21

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