JP5429590B2 - ハーフトーンマスク - Google Patents

ハーフトーンマスク Download PDF

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Publication number
JP5429590B2
JP5429590B2 JP2008154941A JP2008154941A JP5429590B2 JP 5429590 B2 JP5429590 B2 JP 5429590B2 JP 2008154941 A JP2008154941 A JP 2008154941A JP 2008154941 A JP2008154941 A JP 2008154941A JP 5429590 B2 JP5429590 B2 JP 5429590B2
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JP
Japan
Prior art keywords
mask
pattern
mask pattern
resist
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008154941A
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English (en)
Japanese (ja)
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JP2009037218A (ja
Inventor
和昭 赤神
秀作 城戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianma Japan Ltd
Original Assignee
NLT Technologeies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NLT Technologeies Ltd filed Critical NLT Technologeies Ltd
Priority to JP2008154941A priority Critical patent/JP5429590B2/ja
Publication of JP2009037218A publication Critical patent/JP2009037218A/ja
Application granted granted Critical
Publication of JP5429590B2 publication Critical patent/JP5429590B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2008154941A 2007-07-10 2008-06-13 ハーフトーンマスク Active JP5429590B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008154941A JP5429590B2 (ja) 2007-07-10 2008-06-13 ハーフトーンマスク

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007181383 2007-07-10
JP2007181383 2007-07-10
JP2008154941A JP5429590B2 (ja) 2007-07-10 2008-06-13 ハーフトーンマスク

Publications (2)

Publication Number Publication Date
JP2009037218A JP2009037218A (ja) 2009-02-19
JP5429590B2 true JP5429590B2 (ja) 2014-02-26

Family

ID=40246737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008154941A Active JP5429590B2 (ja) 2007-07-10 2008-06-13 ハーフトーンマスク

Country Status (3)

Country Link
JP (1) JP5429590B2 (zh)
KR (2) KR20090006024A (zh)
CN (1) CN101344716B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200457964Y1 (ko) * 2009-08-31 2012-01-16 장용건 테이블 상판 고정부재
JP5983979B2 (ja) 2010-09-15 2016-09-06 Ｎｌｔテクノロジー株式会社 レンズシート、表示パネル及び電子機器
CN103399459B (zh) * 2013-08-07 2016-06-08 中国科学院光电技术研究所 一种用于制备金属/介质纳米多层膜高质量断面的方法
CN107589582A (zh) * 2017-09-04 2018-01-16 深圳市华星光电技术有限公司 Coa显示面板及其制作方法、coa显示装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970009825B1 (ko) * 1993-12-31 1997-06-18 현대전자산업 주식회사 하프톤형 위상반전 마스크 및 그 제조 방법
JP2001296647A (ja) * 2000-02-10 2001-10-26 Nec Corp フォトマスクおよびこれを用いた露光方法
JP3616584B2 (ja) * 2000-06-12 2005-02-02 鹿児島日本電気株式会社 パターン形成方法及びそれを用いた表示装置の製造方法
JP2002006472A (ja) * 2000-06-21 2002-01-09 Oki Electric Ind Co Ltd レジストパターンの形成方法
JP4920140B2 (ja) * 2001-05-18 2012-04-18 ゲットナー・ファンデーション・エルエルシー 液晶表示装置及びその製造方法
JP2003029393A (ja) * 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd マスク、それを用いたパターン形成方法およびリソグラフィ方法
JP3759914B2 (ja) * 2002-04-30 2006-03-29 松下電器産業株式会社 フォトマスク及びそれを用いたパターン形成方法
JP4210166B2 (ja) * 2003-06-30 2009-01-14 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
JP2006030319A (ja) * 2004-07-12 2006-02-02 Hoya Corp グレートーンマスク及びグレートーンマスクの製造方法
JP4339232B2 (ja) * 2004-11-26 2009-10-07 Ｎｅｃ液晶テクノロジー株式会社 アクテイブマトリクス型表示装置用フォトマスク及びその製造方法
JP2008026668A (ja) * 2006-07-21 2008-02-07 Dainippon Printing Co Ltd 階調マスク
JP4896671B2 (ja) * 2006-11-06 2012-03-14 三菱電機株式会社 ハーフトーンマスク及びこれを用いたパターン基板の製造方法
JP4563409B2 (ja) * 2007-01-19 2010-10-13 東京エレクトロン株式会社 リフロー処理方法およびｔｆｔの製造方法

Also Published As

Publication number Publication date
KR20100119734A (ko) 2010-11-10
CN101344716A (zh) 2009-01-14
JP2009037218A (ja) 2009-02-19
KR20090006024A (ko) 2009-01-14
CN101344716B (zh) 2013-02-27
KR101120440B1 (ko) 2012-05-30

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