JP5412190B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP5412190B2
JP5412190B2 JP2009153702A JP2009153702A JP5412190B2 JP 5412190 B2 JP5412190 B2 JP 5412190B2 JP 2009153702 A JP2009153702 A JP 2009153702A JP 2009153702 A JP2009153702 A JP 2009153702A JP 5412190 B2 JP5412190 B2 JP 5412190B2
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JP
Japan
Prior art keywords
reference voltage
circuit
voltage generation
intermittent operation
generation circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009153702A
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English (en)
Japanese (ja)
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JP2011008683A5 (enExample
JP2011008683A (ja
Inventor
崇泰 伊藤
充 平木
真志 堀口
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Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009153702A priority Critical patent/JP5412190B2/ja
Priority to US12/796,033 priority patent/US20100327841A1/en
Publication of JP2011008683A publication Critical patent/JP2011008683A/ja
Publication of JP2011008683A5 publication Critical patent/JP2011008683A5/ja
Application granted granted Critical
Publication of JP5412190B2 publication Critical patent/JP5412190B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
JP2009153702A 2009-06-29 2009-06-29 半導体集積回路装置 Expired - Fee Related JP5412190B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009153702A JP5412190B2 (ja) 2009-06-29 2009-06-29 半導体集積回路装置
US12/796,033 US20100327841A1 (en) 2009-06-29 2010-06-08 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009153702A JP5412190B2 (ja) 2009-06-29 2009-06-29 半導体集積回路装置

Publications (3)

Publication Number Publication Date
JP2011008683A JP2011008683A (ja) 2011-01-13
JP2011008683A5 JP2011008683A5 (enExample) 2012-05-24
JP5412190B2 true JP5412190B2 (ja) 2014-02-12

Family

ID=43379947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009153702A Expired - Fee Related JP5412190B2 (ja) 2009-06-29 2009-06-29 半導体集積回路装置

Country Status (2)

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US (1) US20100327841A1 (enExample)
JP (1) JP5412190B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5695439B2 (ja) * 2011-02-18 2015-04-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6120528B2 (ja) * 2012-11-08 2017-04-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2015069019A (ja) * 2013-09-30 2015-04-13 シナプティクス・ディスプレイ・デバイス株式会社 半導体装置
KR102190453B1 (ko) * 2014-02-17 2020-12-11 삼성전자주식회사 전력 관리 장치 및 이를 포함하는 시스템 온 칩
JP6492507B2 (ja) 2014-10-06 2019-04-03 株式会社デンソー 電子制御装置
JP5888387B1 (ja) * 2014-10-22 2016-03-22 ミツミ電機株式会社 電池保護回路及び電池保護装置、並びに電池パック
KR20170007036A (ko) 2015-07-10 2017-01-18 에스케이하이닉스 주식회사 입력 회로 및 이를 포함하는 반도체 장치
US11703983B2 (en) * 2020-03-25 2023-07-18 Sensortek Technology Corp Capacitance sensing circuit
US11404129B1 (en) 2021-02-05 2022-08-02 Micron Technology, Inc. Power architecture for non-volatile memory
JP7655039B2 (ja) * 2021-03-29 2025-04-02 セイコーエプソン株式会社 集積回路装置、デバイス及び製造方法
JP2025017662A (ja) * 2023-07-25 2025-02-06 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3318365B2 (ja) * 1992-10-20 2002-08-26 富士通株式会社 定電圧回路
JPH09288897A (ja) * 1996-04-19 1997-11-04 Sony Corp 電圧供給回路
US5959471A (en) * 1997-09-25 1999-09-28 Siemens Aktiengesellschaft Method and apparatus for reducing the bias current in a reference voltage circuit
JP3293584B2 (ja) * 1999-03-02 2002-06-17 日本電気株式会社 基準電圧発生装置および方法
JP3398693B2 (ja) * 1999-08-24 2003-04-21 エヌイーシーマイクロシステム株式会社 半導体記憶装置
JP2002091591A (ja) * 2000-09-14 2002-03-29 Seiko Epson Corp 定電圧出力装置
GB2376081B (en) * 2001-03-14 2004-12-08 Micron Technology Inc Measurement of the integrity of a power supply
JP2003005844A (ja) * 2001-06-25 2003-01-08 Matsushita Electric Ind Co Ltd 低消費電流型レギュレータ回路
TW200524139A (en) * 2003-12-24 2005-07-16 Renesas Tech Corp Voltage generating circuit and semiconductor integrated circuit
JP5067836B2 (ja) * 2005-12-19 2012-11-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置及びその動作方法
JP5460093B2 (ja) * 2009-03-26 2014-04-02 ラピスセミコンダクタ株式会社 半導体メモリの内部電源制御回路及び半導体装置

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Publication number Publication date
US20100327841A1 (en) 2010-12-30
JP2011008683A (ja) 2011-01-13

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