JP5411440B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5411440B2 JP5411440B2 JP2008080276A JP2008080276A JP5411440B2 JP 5411440 B2 JP5411440 B2 JP 5411440B2 JP 2008080276 A JP2008080276 A JP 2008080276A JP 2008080276 A JP2008080276 A JP 2008080276A JP 5411440 B2 JP5411440 B2 JP 5411440B2
- Authority
- JP
- Japan
- Prior art keywords
- gain region
- emitting device
- layer
- light emitting
- gain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 238000000034 method Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Images
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- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008080276A JP5411440B2 (ja) | 2008-03-26 | 2008-03-26 | 発光装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008080276A JP5411440B2 (ja) | 2008-03-26 | 2008-03-26 | 発光装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012160789A Division JP5494991B2 (ja) | 2012-07-19 | 2012-07-19 | 発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009238843A JP2009238843A (ja) | 2009-10-15 |
| JP2009238843A5 JP2009238843A5 (enExample) | 2012-04-05 |
| JP5411440B2 true JP5411440B2 (ja) | 2014-02-12 |
Family
ID=41252479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008080276A Expired - Fee Related JP5411440B2 (ja) | 2008-03-26 | 2008-03-26 | 発光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5411440B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5447794B2 (ja) | 2009-05-08 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置 |
| JP5447799B2 (ja) | 2009-06-18 | 2014-03-19 | セイコーエプソン株式会社 | 発光装置およびその駆動方法、並びに、プロジェクター |
| JP5679117B2 (ja) | 2011-03-09 | 2015-03-04 | セイコーエプソン株式会社 | 発光装置、照射装置、およびプロジェクター |
| JP5681002B2 (ja) | 2011-03-09 | 2015-03-04 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6373572A (ja) * | 1986-09-16 | 1988-04-04 | Nec Corp | 端面発光ダイオ−ド |
| JP2007165689A (ja) * | 2005-12-15 | 2007-06-28 | Fujifilm Corp | スーパールミネッセントダイオード |
| JP2007273690A (ja) * | 2006-03-31 | 2007-10-18 | Fujifilm Corp | 光半導体素子、及びこれを備えた波長可変光源 |
-
2008
- 2008-03-26 JP JP2008080276A patent/JP5411440B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009238843A (ja) | 2009-10-15 |
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