JP5410780B2 - 成膜方法、成膜装置、圧電体膜、圧電素子、及び液体吐出装置 - Google Patents

成膜方法、成膜装置、圧電体膜、圧電素子、及び液体吐出装置 Download PDF

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JP5410780B2
JP5410780B2 JP2009035080A JP2009035080A JP5410780B2 JP 5410780 B2 JP5410780 B2 JP 5410780B2 JP 2009035080 A JP2009035080 A JP 2009035080A JP 2009035080 A JP2009035080 A JP 2009035080A JP 5410780 B2 JP5410780 B2 JP 5410780B2
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Prior art keywords
film
substrate
film forming
target
wall surface
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JP2009035080A
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Japanese (ja)
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JP2010189703A5 (https=
JP2010189703A (ja
Inventor
隆満 藤井
崇幸 直野
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2009035080A priority Critical patent/JP5410780B2/ja
Priority to EP10152540.0A priority patent/EP2221395B1/en
Priority to US12/707,520 priority patent/US8563091B2/en
Publication of JP2010189703A publication Critical patent/JP2010189703A/ja
Publication of JP2010189703A5 publication Critical patent/JP2010189703A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1607—Production of print heads with piezoelectric elements
    • B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/21—Line printing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
JP2009035080A 2009-02-18 2009-02-18 成膜方法、成膜装置、圧電体膜、圧電素子、及び液体吐出装置 Active JP5410780B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009035080A JP5410780B2 (ja) 2009-02-18 2009-02-18 成膜方法、成膜装置、圧電体膜、圧電素子、及び液体吐出装置
EP10152540.0A EP2221395B1 (en) 2009-02-18 2010-02-03 Film formation method.
US12/707,520 US8563091B2 (en) 2009-02-18 2010-02-17 Film formation method, film formation device, piezoelectric film, piezoelectric device and liquid discharge device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009035080A JP5410780B2 (ja) 2009-02-18 2009-02-18 成膜方法、成膜装置、圧電体膜、圧電素子、及び液体吐出装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012156690A Division JP5475843B2 (ja) 2012-07-12 2012-07-12 成膜方法、成膜装置、圧電体膜、圧電素子、及び液体吐出装置

Publications (3)

Publication Number Publication Date
JP2010189703A JP2010189703A (ja) 2010-09-02
JP2010189703A5 JP2010189703A5 (https=) 2012-08-30
JP5410780B2 true JP5410780B2 (ja) 2014-02-05

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JP2009035080A Active JP5410780B2 (ja) 2009-02-18 2009-02-18 成膜方法、成膜装置、圧電体膜、圧電素子、及び液体吐出装置

Country Status (3)

Country Link
US (1) US8563091B2 (https=)
EP (1) EP2221395B1 (https=)
JP (1) JP5410780B2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011089748A1 (ja) 2010-01-21 2011-07-28 株式会社ユーテック Ｐｂｎｚｔ強誘電体膜、ゾルゲル溶液、成膜方法及び強誘電体膜の製造方法
JP5776890B2 (ja) * 2010-11-16 2015-09-09 セイコーエプソン株式会社 液体噴射ヘッド及び液体噴射装置並びに圧電素子
JP5790922B2 (ja) * 2011-04-22 2015-10-07 セイコーエプソン株式会社 圧電素子、液体噴射ヘッド、液体噴射装置、超音波デバイス及びセンサー
US9437806B2 (en) * 2013-12-02 2016-09-06 Canon Kabushiki Kaisha Piezoelectric thin film, method of manufacturing the same, piezoelectric thin film manufacturing apparatus and liquid ejection head
RU2718467C1 (ru) * 2018-11-12 2020-04-08 Общества с ограниченной ответсвеностью "СИКЛАБ" Способ получения эпитаксиальных пленок феррита висмута методом молекулярного наслаивания

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940006708B1 (ko) * 1989-01-26 1994-07-25 세이꼬 엡슨 가부시끼가이샤 반도체 장치의 제조 방법
US5006706A (en) * 1989-05-31 1991-04-09 Clemson University Analytical method and apparatus
JPH10335097A (ja) * 1997-03-31 1998-12-18 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
DK0908924T3 (da) * 1997-10-08 2003-09-29 Cockerill Rech & Dev Indretning til dannelse af en coating på et substrat ved kondensation
JP3126698B2 (ja) * 1998-06-02 2001-01-22 富士通株式会社 スパッタ成膜方法、スパッタ成膜装置及び半導体装置の製造方法
JP3820333B2 (ja) * 1999-11-19 2006-09-13 株式会社アルバック 放電プラズマ処理装置
DE602005002060T2 (de) * 2004-01-27 2007-12-13 Matsushita Electric Industrial Co., Ltd., Kadoma Piezoelektrisches Element und dessen Herstellungsverfahren sowie Tintenstrahldruckkopf und -aufzeichnungsgerät mit demselben
KR100814454B1 (ko) * 2004-03-26 2008-03-17 닛신덴키 가부시키 가이샤 실리콘 도트 형성방법 및 실리콘 도트 형성장치
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
JP4142705B2 (ja) * 2006-09-28 2008-09-03 富士フイルム株式会社 成膜方法、圧電膜、圧電素子、及び液体吐出装置
JP4142706B2 (ja) 2006-09-28 2008-09-03 富士フイルム株式会社 成膜装置、成膜方法、絶縁膜、誘電体膜、圧電膜、強誘電体膜、圧電素子および液体吐出装置
JP2008248362A (ja) * 2007-03-30 2008-10-16 Fujifilm Corp セレン蒸着装置
JP2008179894A (ja) * 2008-01-21 2008-08-07 Fujifilm Corp 成膜装置、成膜方法、絶縁膜、誘電体膜、圧電膜、強誘電体膜、圧電素子および液体吐出装置

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Publication number Publication date
EP2221395A1 (en) 2010-08-25
US20100208005A1 (en) 2010-08-19
JP2010189703A (ja) 2010-09-02
US8563091B2 (en) 2013-10-22
EP2221395B1 (en) 2016-05-11

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