JP5404216B2 - 露光方法、露光装置及びデバイス製造方法 - Google Patents

露光方法、露光装置及びデバイス製造方法 Download PDF

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Publication number
JP5404216B2
JP5404216B2 JP2009158196A JP2009158196A JP5404216B2 JP 5404216 B2 JP5404216 B2 JP 5404216B2 JP 2009158196 A JP2009158196 A JP 2009158196A JP 2009158196 A JP2009158196 A JP 2009158196A JP 5404216 B2 JP5404216 B2 JP 5404216B2
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Japan
Prior art keywords
optical system
correction
amount
projection optical
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2009158196A
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English (en)
Japanese (ja)
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JP2011014745A5 (enExample
JP2011014745A (ja
Inventor
健太郎 川波
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009158196A priority Critical patent/JP5404216B2/ja
Priority to US12/828,803 priority patent/US8502961B2/en
Publication of JP2011014745A publication Critical patent/JP2011014745A/ja
Priority to US13/932,753 priority patent/US9329489B2/en
Publication of JP2011014745A5 publication Critical patent/JP2011014745A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009158196A 2009-07-02 2009-07-02 露光方法、露光装置及びデバイス製造方法 Expired - Fee Related JP5404216B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009158196A JP5404216B2 (ja) 2009-07-02 2009-07-02 露光方法、露光装置及びデバイス製造方法
US12/828,803 US8502961B2 (en) 2009-07-02 2010-07-01 Exposure method, exposure apparatus, and method of manufacturing device
US13/932,753 US9329489B2 (en) 2009-07-02 2013-07-01 Exposure method, exposure apparatus, and method of manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009158196A JP5404216B2 (ja) 2009-07-02 2009-07-02 露光方法、露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2011014745A JP2011014745A (ja) 2011-01-20
JP2011014745A5 JP2011014745A5 (enExample) 2013-07-18
JP5404216B2 true JP5404216B2 (ja) 2014-01-29

Family

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Family Applications (1)

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JP2009158196A Expired - Fee Related JP5404216B2 (ja) 2009-07-02 2009-07-02 露光方法、露光装置及びデバイス製造方法

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Country Link
US (2) US8502961B2 (enExample)
JP (1) JP5404216B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5404216B2 (ja) 2009-07-02 2014-01-29 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法
KR20120116329A (ko) * 2010-02-20 2012-10-22 가부시키가이샤 니콘 광원 최적화 방법, 노광 방법, 디바이스 제조 방법, 프로그램, 노광 장치, 리소그래피 시스템, 광원 평가 방법 및 광원 변조 방법
NL2008186A (en) * 2011-03-14 2012-09-17 Asml Netherlands Bv Projection system, lithographic apparatus and device manufacturing method.
JP6095334B2 (ja) * 2012-11-26 2017-03-15 キヤノン株式会社 マスクパターンおよび露光条件を決定する方法、ならびにプログラム
JP6238580B2 (ja) * 2013-06-07 2017-11-29 キヤノン株式会社 露光装置、露光方法、それらを用いたデバイスの製造方法
JP6661270B2 (ja) * 2015-01-16 2020-03-11 キヤノン株式会社 露光装置、露光システム、および物品の製造方法
JP6444909B2 (ja) * 2016-02-22 2018-12-26 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58202449A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd 縮小投影露光装置
US4666273A (en) * 1983-10-05 1987-05-19 Nippon Kogaku K. K. Automatic magnification correcting system in a projection optical apparatus
JPS60239023A (ja) * 1984-05-11 1985-11-27 Nippon Kogaku Kk <Nikon> 投影光学装置
JP2516194B2 (ja) * 1984-06-11 1996-07-10 株式会社日立製作所 投影露光方法
JPH0821531B2 (ja) * 1986-08-29 1996-03-04 株式会社ニコン 投影光学装置
JPS63199419A (ja) * 1987-02-16 1988-08-17 Canon Inc 投影露光装置
US5424803A (en) * 1991-08-09 1995-06-13 Canon Kabushiki Kaisha Projection exposure apparatus and semiconductor device manufacturing method
JP3102077B2 (ja) * 1991-08-09 2000-10-23 キヤノン株式会社 半導体デバイスの製造方法及び投影露光装置
JP2864060B2 (ja) * 1991-09-04 1999-03-03 キヤノン株式会社 縮小投影型露光装置及び方法
US5581324A (en) * 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
JP2555274B2 (ja) * 1994-07-13 1996-11-20 株式会社日立製作所 投影露光装置
JP3412981B2 (ja) * 1995-08-29 2003-06-03 キヤノン株式会社 投影露光装置および投影露光方法
JP3265531B2 (ja) 1997-05-12 2002-03-11 株式会社ニコン 集積回路製造方法、集積回路用のパターンが形成されるウエハ、および投影露光装置
JPH11307415A (ja) * 1998-04-16 1999-11-05 Nikon Corp 露光方法および露光装置
WO2000017916A1 (en) * 1998-09-17 2000-03-30 Nikon Corporation Method of adjusting optical projection system
JP3265533B2 (ja) 1999-02-03 2002-03-11 株式会社ニコン 集積回路製造方法、および投影露光装置
JP2001274056A (ja) * 2000-03-24 2001-10-05 Canon Inc 露光装置およびデバイス製造装置
KR20030033067A (ko) 2000-09-21 2003-04-26 가부시키가이샤 니콘 결상특성의 계측방법 및 노광방법
WO2005022614A1 (ja) * 2003-08-28 2005-03-10 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
JP5404216B2 (ja) 2009-07-02 2014-01-29 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
US9329489B2 (en) 2016-05-03
US20130286373A1 (en) 2013-10-31
US8502961B2 (en) 2013-08-06
US20110001956A1 (en) 2011-01-06
JP2011014745A (ja) 2011-01-20

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