JP5402972B2 - 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置 - Google Patents

気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置 Download PDF

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JP5402972B2
JP5402972B2 JP2011081850A JP2011081850A JP5402972B2 JP 5402972 B2 JP5402972 B2 JP 5402972B2 JP 2011081850 A JP2011081850 A JP 2011081850A JP 2011081850 A JP2011081850 A JP 2011081850A JP 5402972 B2 JP5402972 B2 JP 5402972B2
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light receiving
layer
monitoring device
light
gas
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博史 稲田
陽一 永井
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Sumitomo Electric Industries Ltd
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JP2011081850A 2011-04-01 2011-04-01 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置 Expired - Fee Related JP5402972B2 (ja)

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JP2011081850A JP5402972B2 (ja) 2011-04-01 2011-04-01 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置

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JP2008331531A Division JP4743453B2 (ja) 2008-12-25 2008-12-25 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置

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JP2011155291A5 JP2011155291A5 (https=) 2012-02-09
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JP5748176B2 (ja) * 2011-11-01 2015-07-15 住友電気工業株式会社 受光素子、エピタキシャルウエハおよびその製造方法
JP2016200558A (ja) * 2015-04-14 2016-12-01 横河電機株式会社 ガス濃度分析装置

Family Cites Families (9)

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JPH0547692A (ja) * 1991-08-20 1993-02-26 Fujitsu Ltd 半導体装置の製造方法
JPH05160426A (ja) * 1991-12-06 1993-06-25 Nec Corp 半導体受光素子
JPH07106621A (ja) * 1993-09-30 1995-04-21 Furukawa Electric Co Ltd:The 半導体受光素子
JP3781354B2 (ja) * 2001-12-04 2006-05-31 慎司 岡崎 ガスセンサ用の膜とその製造方法
JP4010455B2 (ja) * 2003-04-24 2007-11-21 ホーチキ株式会社 散乱光式煙感知器
JP2006012974A (ja) * 2004-06-23 2006-01-12 Fujitsu Ltd 光検知装置
JP2007201432A (ja) * 2005-12-28 2007-08-09 Sumitomo Electric Ind Ltd 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
JP2007324572A (ja) * 2006-05-02 2007-12-13 Sumitomo Electric Ind Ltd 受光素子アレイ、その製造方法、および光計測システム
JP2008205001A (ja) * 2007-02-16 2008-09-04 Sumitomo Electric Ind Ltd 受光素子、センサおよび撮像装置

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