JP5401803B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP5401803B2
JP5401803B2 JP2008041726A JP2008041726A JP5401803B2 JP 5401803 B2 JP5401803 B2 JP 5401803B2 JP 2008041726 A JP2008041726 A JP 2008041726A JP 2008041726 A JP2008041726 A JP 2008041726A JP 5401803 B2 JP5401803 B2 JP 5401803B2
Authority
JP
Japan
Prior art keywords
region
gate electrode
impurity
impurity concentration
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008041726A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009200334A (ja
JP2009200334A5 (enExample
Inventor
堅一 岡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to JP2008041726A priority Critical patent/JP5401803B2/ja
Publication of JP2009200334A publication Critical patent/JP2009200334A/ja
Publication of JP2009200334A5 publication Critical patent/JP2009200334A5/ja
Application granted granted Critical
Publication of JP5401803B2 publication Critical patent/JP5401803B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2008041726A 2008-02-22 2008-02-22 半導体装置の製造方法 Expired - Fee Related JP5401803B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008041726A JP5401803B2 (ja) 2008-02-22 2008-02-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008041726A JP5401803B2 (ja) 2008-02-22 2008-02-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2009200334A JP2009200334A (ja) 2009-09-03
JP2009200334A5 JP2009200334A5 (enExample) 2010-12-02
JP5401803B2 true JP5401803B2 (ja) 2014-01-29

Family

ID=41143505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008041726A Expired - Fee Related JP5401803B2 (ja) 2008-02-22 2008-02-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP5401803B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012114269A (ja) * 2010-11-25 2012-06-14 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
JP5937172B2 (ja) * 2014-11-05 2016-06-22 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR20170114471A (ko) 2016-04-05 2017-10-16 엘지디스플레이 주식회사 유기발광 표시 장치
KR102663406B1 (ko) 2016-04-04 2024-05-14 엘지디스플레이 주식회사 패널 진동형 음향 발생 액츄에이터 및 그를 포함하는 양면 표시 장치
US10219079B2 (en) 2016-03-28 2019-02-26 Lg Display Co., Ltd. Display device for generating sound by vibrating panel
KR101704517B1 (ko) 2016-03-28 2017-02-09 엘지디스플레이 주식회사 패널 진동형 음향 발생 표시 장치
JP7456776B2 (ja) * 2020-01-16 2024-03-27 日清紡マイクロデバイス株式会社 炭化珪素半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120082A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体装置及びその製造方法
JPH02280322A (ja) * 1989-04-21 1990-11-16 Sony Corp 半導体装置の製法
JP2900870B2 (ja) * 1996-01-30 1999-06-02 日本電気株式会社 Ｍｏｓ型電界効果トランジスタおよびその製造方法
JPH09260649A (ja) * 1996-03-19 1997-10-03 Fujitsu Ltd 半導体装置の製造方法
JP3699946B2 (ja) * 2002-07-25 2005-09-28 株式会社東芝 半導体装置の製造方法
JP2006179947A (ja) * 2006-02-13 2006-07-06 Renesas Technology Corp 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JP2009200334A (ja) 2009-09-03

Similar Documents

Publication Publication Date Title
JP5401803B2 (ja) 半導体装置の製造方法
CN111092112A (zh) Mos场效应晶体管及其制造方法
CN101202305A (zh) 具有改进的源极和漏极的半导体器件及其制造方法
US8044470B2 (en) Semiconductor device and method of fabricating the same
JP5303881B2 (ja) 電界効果トランジスタ及び電界効果トランジスタの製造方法
JP6996858B2 (ja) 半導体装置及びその製造方法
KR100574172B1 (ko) 반도체 소자의 제조방법
US7235450B2 (en) Methods for fabricating semiconductor devices
KR100897821B1 (ko) 반도체 소자 제조 방법
KR20080020401A (ko) 듀얼 게이트 ｃｍｏｓ형 반도체 소자와 그 제조 방법
KR100752201B1 (ko) 반도체 소자의 제조 방법
JP2004253778A (ja) 半導体装置及びその製造方法
KR101673920B1 (ko) 반도체 장치의 제조 방법
KR101082101B1 (ko) 듀얼 게이트의 게이트 전극 형성방법
JP5324849B2 (ja) 半導体装置およびその製造方法
KR100475538B1 (ko) 반도체 소자의 제조방법
JP2012256668A (ja) 半導体装置及びその製造方法
KR100903279B1 (ko) 반도체 소자의 제조 방법
KR100940438B1 (ko) 반도체 소자의 제조 방법
KR100546812B1 (ko) 반도체 소자 제조방법
KR100494344B1 (ko) 반도체소자의 제조방법
KR20060077160A (ko) 반도체 소자의 트랜지스터 제조 방법
CN101097870A (zh) 半导体装置制造方法
KR20050072352A (ko) 트랜지스터 제조 방법
KR20120007678A (ko) 반도체 장치 제조방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20101001

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101020

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121023

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121025

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130430

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130619

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131001

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131014

R150 Certificate of patent or registration of utility model

Ref document number: 5401803

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees