JP5401550B2 - 低温基板上の薄膜を高速で反応させる方法および装置 - Google Patents
低温基板上の薄膜を高速で反応させる方法および装置 Download PDFInfo
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Description
本出願は、米国特許法§119(e)(1)の下、2008年10月17日に出願された仮特許出願第61/196,531号に対する優先権を主張し、この仮特許出願の内容は、本明細書において参照として援用される。
1.技術分野
本発明は、一般に硬化方法に関し、特に低温基板上の薄膜を高速で反応させる方法および装置に関する。
回路上に導電体を作製するための1つのアプローチは、金属含有インクを基板上にプリントし、次に上記金属含有インク中の粒子を焼結するために基板を加熱して導電経路を形成することである。一般に、電気伝導に適した大部分の金属は、非常に高い温度まで加熱される必要があり、往々にしてこの温度は、それらの融点の200〜300℃の範囲にある。例えば、銀は、空気中で加熱することができ、その酸化物は、導電率は比較的低いが相対的に低い温度で分解することから、導電線(conductive trace)を作製するのに良い金属である。さらに、導電線を作製するための金属の選択に関して言えば、銀が最も導電性の高い金属であるという事実は、そのコストが高いことよりしばしば重要である。
例えば、本明細書は以下の項目も提供する。
(項目1)
低温基板上の薄膜を反応させる方法であって、前記方法は、
ガス雰囲気を提供する工程;
低温基板に乗った薄膜の層を、前記ガス雰囲気中を通って移動させる工程;および
前記薄膜の層が前記ガス雰囲気中をパルス電磁放射線の線源に対して移動する間に、前記薄膜の層を前記パルス電磁放射線に曝露して、前記薄膜の層が前記ガス雰囲気と化学的に反応することを可能にする工程
を含む方法。
(項目2)
前記ガス雰囲気は水素を含む、項目1に記載の方法。
(項目3)
前記ガス雰囲気は炭化水素ガスを含む、項目1に記載の方法。
(項目4)
前記ガス雰囲気は1つより多いガス種を含む、項目1に記載の方法。
(項目5)
前記薄膜は、正の還元電位を持つ金属を含んだ金属化合物である、項目1に記載の方法。
(項目6)
前記金属化合物は酸化銅である、項目5に記載の方法。
(項目7)
前記金属化合物は酸化白金である、項目5に記載の方法。
(項目8)
前記金属化合物は酸化パラジウムである、項目5に記載の方法。
(項目9)
前記薄膜は金属である、項目1に記載の方法。
(項目10)
前記低温基板はプラスチックで作製されている、項目1に記載の方法。
(項目11)
前記低温基板は紙で作製されている、項目1に記載の方法。
(項目12)
前記低温基板はポリマーで作製されている、項目1に記載の方法。
(項目13)
硬化装置であって、前記硬化装置は、
ガス雰囲気を提供するための囲い;
薄膜の層が前記ガス雰囲気と化学的に反応することを可能にすべく、低温基板に乗った前記薄膜の層にパルス電磁放射線を提供するための閃光ランプを有するストロボヘッド;および
前記薄膜の層を前記ガス雰囲気中で前記ストロボヘッドに対して移動させるためのコンベヤーシステム;および
前記閃光ランプによって発生された前記パルス電磁放射線の出力、持続時間、繰返し率および数を制御するためのストロボ制御モジュール
を備える硬化装置。
(項目14)
前記の閃光ランプはキセノン閃光ランプである、項目13に記載の硬化装置。
(項目15)
前記低温基板は、前記パルス電磁放射線の前記繰返し率に同期化された速度で移動する、項目13に記載の硬化装置。
(項目16)
前記低温基板は、リールツーリールシステムによって搬送される、項目13に記載の硬化装置。
(項目17)
前記ガス雰囲気は水素を含む、項目13の硬化装置。
(項目18)
前記ガス雰囲気は炭化水素ガスを含む、項目13の硬化装置。
(項目19)
前記薄膜は、正の還元電位を持つ金属を含んだ金属化合物である、項目13に記載の硬化装置。
(項目20)
前記薄膜は金属である、項目13に記載の硬化装置。
S=ウェブ速度[フィート(ft)/分]
O=重複係数
W=硬化ヘッド幅[インチ(in)]
重複係数Oは、基板が受け取るストロボパルスの平均数である。例えば、ウェブ速度200フィート/分、および重複係数5、ならびに硬化ヘッド幅2.75インチでは、ストロボパルス率は72.7Hzである。
(1)H2を用いた還元(またはH2貯蔵材料用水素化物の生成)。
Claims (20)
- 低温基板上の薄膜を反応させる方法であって、前記方法は、
ガス雰囲気を提供することと、
低温基板に乗った薄膜の層を、前記ガス雰囲気中を通って移動させることと、
前記薄膜の層が前記ガス雰囲気中をパルス電磁放射を生成する閃光ランプを有するストロボヘッドに対して移動する間に、前記薄膜の層を前記パルス電磁放射に曝露して、前記パルス電磁放射の間に前記薄膜の層が前記ガス雰囲気と化学的に反応することを可能にすることと
を含む方法。 - 前記ガス雰囲気は水素を含む、請求項1に記載の方法。
- 前記ガス雰囲気は炭化水素ガスを含む、請求項1に記載の方法。
- 前記ガス雰囲気は1つより多いガス種を含む、請求項1に記載の方法。
- 前記薄膜は、正の還元電位を持つ金属を含んだ金属化合物である、請求項1に記載の方法。
- 前記金属化合物は酸化銅である、請求項5に記載の方法。
- 前記金属化合物は酸化白金である、請求項5に記載の方法。
- 前記金属化合物は酸化パラジウムである、請求項5に記載の方法。
- 前記薄膜は金属である、請求項1に記載の方法。
- 前記低温基板はプラスチックで作製されている、請求項1に記載の方法。
- 前記低温基板は紙で作製されている、請求項1に記載の方法。
- 前記低温基板はポリマーで作製されている、請求項1に記載の方法。
- 硬化装置であって、前記硬化装置は、
ガス雰囲気を提供するための囲いと、
パルス電磁放射の間に薄膜の層が前記ガス雰囲気と化学的に反応することを可能にすべく、低温基板に乗った前記薄膜の層に前記パルス電磁放射を提供するための閃光ランプを有するストロボヘッドと、
前記薄膜の層を前記ガス雰囲気中で前記ストロボヘッドに対して移動させるためのコンベヤーシステムと、
前記閃光ランプによって発生された前記パルス電磁放射の出力、持続時間、繰返し率および数を制御するためのストロボ制御モジュールと
を備える硬化装置。 - 前記の閃光ランプはキセノン閃光ランプである、請求項13に記載の硬化装置。
- 前記低温基板は、前記パルス電磁放射の前記繰返し率に同期化された速度で移動する、請求項13に記載の硬化装置。
- 前記低温基板は、リールツーリールシステムによって搬送される、請求項13に記載の硬化装置。
- 前記ガス雰囲気は水素を含む、請求項13の硬化装置。
- 前記ガス雰囲気は炭化水素ガスを含む、請求項13の硬化装置。
- 前記薄膜は、正の還元電位を持つ金属を含んだ金属化合物である、請求項13に記載の硬化装置。
- 前記薄膜は金属である、請求項13に記載の硬化装置。
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US19653108P | 2008-10-17 | 2008-10-17 | |
US61/196,531 | 2008-10-17 | ||
PCT/US2009/061172 WO2010045639A1 (en) | 2008-10-17 | 2009-10-19 | Method and apparatus for reacting thin films on low-temperature substrates at high speeds |
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JP2011532100A Active JP5922929B2 (ja) | 2008-10-17 | 2009-03-25 | 低温基板上の薄膜を還元する方法 |
JP2011532314A Active JP5401550B2 (ja) | 2008-10-17 | 2009-10-19 | 低温基板上の薄膜を高速で反応させる方法および装置 |
JP2013222959A Pending JP2014033227A (ja) | 2008-10-17 | 2013-10-28 | 低温基板上の薄膜を高速で反応させる方法および装置 |
JP2014224144A Withdrawn JP2015034352A (ja) | 2008-10-17 | 2014-11-04 | 低温基板上の薄膜を還元する方法 |
JP2016156258A Active JP6328702B2 (ja) | 2008-10-17 | 2016-08-09 | 低温基板上の薄膜を還元する方法 |
JP2018079858A Pending JP2018131691A (ja) | 2008-10-17 | 2018-04-18 | 低温基板上の薄膜を還元する方法 |
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US8410712B2 (en) * | 2008-07-09 | 2013-04-02 | Ncc Nano, Llc | Method and apparatus for curing thin films on low-temperature substrates at high speeds |
US8834957B2 (en) * | 2008-11-05 | 2014-09-16 | Lg Chem, Ltd. | Preparation method for an electroconductive patterned copper layer |
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