JP5400776B2 - 高い動作温度を維持しシェーリングを減らす金属および酸化物界面アセンブリ - Google Patents
高い動作温度を維持しシェーリングを減らす金属および酸化物界面アセンブリ Download PDFInfo
- Publication number
- JP5400776B2 JP5400776B2 JP2010520018A JP2010520018A JP5400776B2 JP 5400776 B2 JP5400776 B2 JP 5400776B2 JP 2010520018 A JP2010520018 A JP 2010520018A JP 2010520018 A JP2010520018 A JP 2010520018A JP 5400776 B2 JP5400776 B2 JP 5400776B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode assembly
- foil
- lamp
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 30
- 239000002184 metal Substances 0.000 title claims description 30
- 238000000429 assembly Methods 0.000 title description 3
- 230000000712 assembly Effects 0.000 title description 3
- 239000011888 foil Substances 0.000 claims description 81
- 238000000576 coating method Methods 0.000 claims description 63
- 239000011248 coating agent Substances 0.000 claims description 58
- 238000000151 deposition Methods 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- -1 InO Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 230000002035 prolonged effect Effects 0.000 claims 1
- 230000002459 sustained effect Effects 0.000 claims 1
- 150000003568 thioethers Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 239000010453 quartz Substances 0.000 description 30
- 239000000463 material Substances 0.000 description 24
- 230000008021 deposition Effects 0.000 description 18
- 239000011247 coating layer Substances 0.000 description 16
- 230000035882 stress Effects 0.000 description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 11
- 239000011733 molybdenum Substances 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000002028 premature Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000008199 coating composition Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010525 oxidative degradation reaction Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910015797 MoPt Inorganic materials 0.000 description 1
- 101100077717 Mus musculus Morn2 gene Proteins 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/36—Seals between parts of vessels; Seals for leading-in conductors; Leading-in conductors
- H01J61/366—Seals for leading-in conductors
- H01J61/368—Pinched seals or analogous seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/04—Electrodes; Screens; Shields
- H01J61/06—Main electrodes
- H01J61/073—Main electrodes for high-pressure discharge lamps
- H01J61/0732—Main electrodes for high-pressure discharge lamps characterised by the construction of the electrode
Landscapes
- Vessels And Coating Films For Discharge Lamps (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/832,230 | 2007-08-01 | ||
| US11/832,230 US7863818B2 (en) | 2007-08-01 | 2007-08-01 | Coil/foil-electrode assembly to sustain high operating temperature and reduce shaling |
| PCT/US2008/067265 WO2009017891A1 (en) | 2007-08-01 | 2008-06-18 | Metal and oxide interface assembly to sustain high operating temperature and reduce shaling |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010535401A JP2010535401A (ja) | 2010-11-18 |
| JP2010535401A5 JP2010535401A5 (enExample) | 2012-07-12 |
| JP5400776B2 true JP5400776B2 (ja) | 2014-01-29 |
Family
ID=39739890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010520018A Expired - Fee Related JP5400776B2 (ja) | 2007-08-01 | 2008-06-18 | 高い動作温度を維持しシェーリングを減らす金属および酸化物界面アセンブリ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7863818B2 (enExample) |
| EP (1) | EP2183763B1 (enExample) |
| JP (1) | JP5400776B2 (enExample) |
| CN (1) | CN101772826B (enExample) |
| PL (1) | PL2183763T3 (enExample) |
| WO (1) | WO2009017891A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8035285B2 (en) | 2009-07-08 | 2011-10-11 | General Electric Company | Hybrid interference coatings, lamps, and methods |
| US10529551B2 (en) * | 2012-11-26 | 2020-01-07 | Lucidity Lights, Inc. | Fast start fluorescent light bulb |
| DE102015218878A1 (de) * | 2015-09-30 | 2017-03-30 | Osram Gmbh | Gleichstrom-Gasentladungslampe mit einer thoriumfreien Kathode |
| US10236174B1 (en) | 2017-12-28 | 2019-03-19 | Lucidity Lights, Inc. | Lumen maintenance in fluorescent lamps |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2697130A (en) | 1950-12-30 | 1954-12-14 | Westinghouse Electric Corp | Protection of metal against oxidation |
| NL106429C (nl) * | 1959-09-23 | 1963-11-15 | Philips Nv | Werkwijze ter vervaardiging van een elektrische lamp, alsmede volgens deze werkwijze vervaardigde elektrische lamp |
| US3420944A (en) | 1966-09-02 | 1969-01-07 | Gen Electric | Lead-in conductor for electrical devices |
| DE3812084A1 (de) | 1988-04-12 | 1989-10-26 | Philips Patentverwaltung | Metallhalogenid-hochdruckgasentladungslampe |
| US5021711A (en) | 1990-10-29 | 1991-06-04 | Gte Products Corporation | Quartz lamp envelope with molybdenum foil having oxidation-resistant surface formed by ion implantation |
| JPH11111240A (ja) * | 1997-09-30 | 1999-04-23 | Toshiba Lighting & Technology Corp | 封止用金属箔、管球および照明器具 |
| WO2000010193A1 (en) * | 1998-08-13 | 2000-02-24 | Koninklijke Philips Electronics N.V. | Electric lamp having a coated external current conductor |
| DE19915920A1 (de) * | 1999-04-09 | 2000-10-19 | Heraeus Gmbh W C | Metallisches Bauteil und Entladungslampe |
| JP2000315456A (ja) * | 1999-04-30 | 2000-11-14 | Matsushita Electric Ind Co Ltd | 放電型ランプとその製造方法 |
| DE60039657D1 (de) | 1999-07-02 | 2008-09-11 | Phoenix Electric Co Ltd | Aufbauanordnung für Lampe und Dichtungsstruktur einer Lampe mit einer solchen Aufbauanordnung |
| AT4408U1 (de) * | 2000-05-18 | 2001-06-25 | Plansee Ag | Verfahren zur herstellung einer elektrischen lampe |
| JP3648184B2 (ja) * | 2001-09-07 | 2005-05-18 | 株式会社小糸製作所 | 放電ランプアークチューブおよび同アークチューブの製造方法 |
| JP3687582B2 (ja) * | 2001-09-12 | 2005-08-24 | ウシオ電機株式会社 | 放電ランプ |
| JP3543799B2 (ja) * | 2001-10-17 | 2004-07-21 | ウシオ電機株式会社 | ショートアーク型超高圧放電ランプ |
| JP2003317659A (ja) * | 2002-04-25 | 2003-11-07 | Ushio Inc | 放電ランプ |
| DE10245922A1 (de) * | 2002-10-02 | 2004-04-15 | Philips Intellectual Property & Standards Gmbh | Hochdruckgasentladungslampe |
| JP2004273358A (ja) * | 2003-03-11 | 2004-09-30 | Harison Toshiba Lighting Corp | ガラス封着用金属線および管球ならびに電気部品 |
| JP4196850B2 (ja) * | 2004-02-16 | 2008-12-17 | ウシオ電機株式会社 | 箔シールランプ |
| US7126266B2 (en) * | 2004-07-14 | 2006-10-24 | The Board Of Trustees Of The University Of Illinois | Field emission assisted microdischarge devices |
| JP2007012508A (ja) * | 2005-07-01 | 2007-01-18 | Ushio Inc | 放電ランプ |
| US7719194B2 (en) | 2006-05-12 | 2010-05-18 | General Electric Company | Inhibited oxidation foil connector for a lamp |
| JP2008181680A (ja) * | 2007-01-23 | 2008-08-07 | Harison Toshiba Lighting Corp | メタルハライドランプ、点灯装置、自動車用前照灯装置 |
-
2007
- 2007-08-01 US US11/832,230 patent/US7863818B2/en not_active Expired - Fee Related
-
2008
- 2008-06-18 WO PCT/US2008/067265 patent/WO2009017891A1/en not_active Ceased
- 2008-06-18 EP EP08771296.4A patent/EP2183763B1/en not_active Not-in-force
- 2008-06-18 CN CN200880101424XA patent/CN101772826B/zh not_active Expired - Fee Related
- 2008-06-18 JP JP2010520018A patent/JP5400776B2/ja not_active Expired - Fee Related
- 2008-06-18 PL PL08771296T patent/PL2183763T3/pl unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN101772826B (zh) | 2013-04-24 |
| EP2183763A1 (en) | 2010-05-12 |
| JP2010535401A (ja) | 2010-11-18 |
| US20090033200A1 (en) | 2009-02-05 |
| CN101772826A (zh) | 2010-07-07 |
| WO2009017891A1 (en) | 2009-02-05 |
| US7863818B2 (en) | 2011-01-04 |
| EP2183763B1 (en) | 2014-03-12 |
| PL2183763T3 (pl) | 2014-07-31 |
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